First Generation Microbolometer Fabrication Procedure

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First Generation Microbolometer Fabrication
Procedure
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SEM Picture of a 1x10 Microbolometer Array,First
Generation- Surface Micromachined

• 200 nm Y-Ba-Cu-O thermometer
• 200 nm Au electrodes
• 1.5 mm SiO2 support layer
• 40 mm x 40 mm pixels.
• Gth ? 8x10-6 W/K.
• Cth ? 8x10-9 J/K.
• tthCth/Gth?1 ms

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Temperature Variation of Bolometric Parameters

• Temperature Coefficient of Resistance
• Responsivity of a Bolometer

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Responsivity

• Devices current-biased, measured in atmospheric
  pressure

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Spectral Response of Microbolometer
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Detectivity

• Devices current-biased, atmospheric pressure

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Noise Effects on Temperature Resolution

• Background Noise Limited Detectivity for TDTBT
  is 1.8 x 1010 cm Hz1/2/W at 300 K.
• Noise Equivalent temperature difference where
  (DP/DT)l1-l2 2.6x10-4 W/cm2K for 8-14 mm
  atmospheric window

NETDmin 1 mK
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Noise Effects on Temperature Resolution

• Background Noise Limited Detectivity for TDTBT
  is 1.8 x 1010 cm Hz1/2/W at 300 K.
• Noise Equivalent temperature difference where
  (DP/DT)l1-l2 2.6x10-4 W/cm2K for 8-14 mm
  atmospheric window

NETDmin 1 mK
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Power Normalized 1/f-noise Corner Frequency

• The frequency, fc, where 1/f-noise equals the
  Johnson noise.

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Result Summary

• Calculated NETD 76 mK, assuming 4 Hz amplifier
  bandwidth (in air or vacuum).

• TCR -3.5/K.
• Rv 104 V/W at 0.4 mA bias.
• D ? 108 cm Hz1/2/W.

Comparison with other materials