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Si Pixel Tracking Detectors

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90's- Si - diode- Omega2/3,DELPHI X X x. Si - diode- SSC/LHC X X X ... Choice of Indium or Solder (PbSn) Indium -Evaporation, 2 bumps, Allignment -High Yield ... – PowerPoint PPT presentation

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Title: Si Pixel Tracking Detectors


1
Si Pixel Tracking Detectors
  • Introduction
  • Sensor
  • Readout Chip
  • Mechanical Issues
  • Performance
  • -Diamond

2
36 MPix 150x150mm 2
3
HISTORICAL
Vertex High Radiation
Stand- resolution multi
hardness alone Tracking
Trig 80s- CCD detectors- SLD
X Si - diode x x 90s-
Si - diode- Omega2/3,DELPHI X X x
Si - diode- SSC/LHC X X
X Diamond x x
x 2000s Si - diode/ LHC/BTEV X X
X X Diamond X X X X
4
Track Cluster
  • Pixel Tracker
  • Pixel Size
  • Occupancy
  • Charge Sharing
  • S/N
  • ExB Drift
  • Radiation Damage
  • LHC - 1014 /cm2/yr

Trigger
Single Track
Charge Sharing
Vertex Resolution (20-30)mm IP
5
  • Radiation Damage Effects
  • Increase in volume leakage current.
  • Build-up of effective p-doping (bulk inversion).
  • Charge trapping.
  • Reverse Annealing- inactive defects become
    active,
  • increasing effective p-doping. (T-dependent)

6
Basic Diode Structure
  • .

7
  • BASIC PACKAGE
  • Sensor Bump Bonded to Readout Chip
  • In or Pb/Sn for Bumps
  • Wafer Thinning
  • Dicing
  • Yield

8
  • Sensors Isolation
  • Guard Ring Design
  • p-stop, p-spray
  • Radiation Damage
  • -Bulk Damage
  • -Depletion Voltage
  • Type Inversion
  • Self Annealing/Thermal
  • Diamond Detectors
  • -Radiation Hard
  • -Simple Architecture

Electrode Diamond Electrode
CVD DIAMOND
9
  • READOUT CHIP (CMOS)
  • Radiation Hard Architecture (SOI)
  • Military/ Space Science
  • Analoque/Digital
  • SEU, Latchup (10-6 -10-10)
  • DMILL .80mm Bi-CMOS
  • IBM .25mm lt-----

Thin Si Layer Oxide Si Substrate
PSI Readout Chip
10
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11
  • BUMP and FLIP-CHIP Interconnect
  • Choice of Indium or Solder (PbSn)
  • Indium
  • -Evaporation, 2 bumps, Allignment
  • -High Yield
  • Electroplated Solder
  • -Reflow techniques
  • 180oC. Flux, Self Alligning
  • -Complex UBM (UnderBump Metalization)
  • -Excellent Electrical and Mechanical
  • Contact

Readout Chip
Sensor
12
Pseudo -TRIGGER PAD
SLOW CONTROL UPLOADS 40MHz I2C
DATA FAST TRIGGER OUT (L3)
13
COOLING
MECHANICAL
  • Low Mass Support Structures
  • - Be , C-Fiber
  • Wafer Thinning
  • -.25 mm lithography on 8800mm
  • Dicing Accuracy and Placement
  • Radiation Hard Glues/Epoxies
  • Cooling (KWs per Detector)
  • - (10-20) oC
  • Flurocarbons (high mass)
  • Evaporative Cooling(low mass)
  • Thermal Expansion

14
High Density Interconnects
VHDI
Sensor
ROC
Bump Bonds
HDI
Wire Bonds
Be Panel
Silicon Plate
15
PERFORMANCE (Si Diamond in CERN Test Beam)
Charge Sharing
Vienna Repeater
Y
Row
X
Z, B

Double Column
Beam
20o
ROC, PSI36 11 double columns x 30 rows
Pixels 150 x150 ?m2
8mm
D\Transfer from Bob\Pictures\Test Beam
Hardware\Geometry Pixels.ppt
16
Si 25000e/mip 2000e noise 99
efficiency Dia 9000e/mip 2000e noise
95 efficiency
PERFORMANCE (cont)
Charge sharing vs position
Pixels at 20o to beam
? 14 ?m over pixel
150 ?m
150 ?m
Charge sharing vs position
150 ?m / ?12 43 ?m
? 46 ?m over pixel
Pixels normal to beam
17
  • CONCLUSIONS
  • Si Pixel Detectors- a Great Challenge!
  • Many Difficult Technologies to Master.
  • Much Will be Solved in LHC/BTeV era.
  • HEP Must Learn to Deal with High Development
    Costs.
  • Trigger Possibilities Abundant.
  • Diamond Detectors Feasible.

18
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19
X-Ray Crystalography
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