Compact IGBT Modelling for System Simulation - PowerPoint PPT Presentation

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Compact IGBT Modelling for System Simulation

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Chopper cell circuit (inductive switching) Model Details ... Full chopper cell. Initial fit by hand. All parasitics required (especially stray inductances) ... – PowerPoint PPT presentation

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Title: Compact IGBT Modelling for System Simulation


1
Compact IGBT Modelling for System Simulation
  • Philip Mawby
  • Angus Bryant

2
Background
  • Compact modelling of IGBTs and diodes
  • Warwick and Cambridge Universities, UK
  • Collaboration with University of South Carolina,
    USA
  • Developed for MATLAB/Simulink, PSpice
  • Integrated device optimisation parameter
    extraction in MATLAB
  • Proven for a wide range of devices conditions
  • Includes full temperature dependency

3
Compact Device Models
  • Excess carrier density modelled
  • Critical to on-state and switching behaviour
  • Ambipolar diffusion equation (ADE) describes
    carrier density distribution
  • Fourier series used to solve ADE
  • Boundary conditions set by depletion layers, MOS
    channel, emitter recombination, etc.
  • Implemented in Simulink
  • Block-diagram form (including circuit)
  • Chopper cell circuit (inductive switching)

4
Model Details
  • Excess carrier density (stored charge) is
    one-dimensional for 90 of CSR.
  • Fourier series solves 1D carrier density p(x,t)
    in CSR
  • Fourier terms pk(t) solved by ordinary
    differential equations
  • Boundary conditions CSR edges x1,x2 and
    gradients dp/dx (set by currents).
  • Depletion layer voltage Vd2 provides feedback to
    keep p(x2)0.
  • Classic MOS model used to determine e- current
    In2.

General arrangement of CSR and depletion layer
during turn-off
5
Model Capabilities
  • Temperature-enabled
  • Proven capability from 150C to 150C.
  • IGBT structures
  • 2-D effects (gate structure) accounted for
  • Buffer layer enabled choice of NPT/PT (including
    FS/SPT devices)
  • Local lifetime control enabled

6
IGBT Model Outline
Base region resistance (conductivity modulation)
Emitter recombination (injection)
Carrier storage region (CSR) with Fourier series
solution
Depletion layer equations
Classic MOSFET model
Miller capacitance
Kelvin emitter inductance
7
Device Matching - 1
  • Full chopper cell
  • Initial fit by hand
  • All parasitics required (especially stray
    inductances).
  • Estimates of unknown parasitics and parameters.

8
Device Matching - 2
  • IGBT and diode parameter sets for compact models.

9
Device Matching - 3
  • Inductive switching shown here.
  • IGBT turn-on (left), IGBT turn-off (right).
  • Instantaneous power dissipations shown to
    validate switching energies.

10
Device Matching - 4
  • Inductive switching shown here.
  • IGBT turn-on (left), IGBT turn-off (right).
  • Instantaneous power dissipations shown to
    validate switching energies.

11
Device Matching - 5
  • On-state (forward voltage) shown here.

12
Turn-on Waveforms
  • Given at different temperatures and load currents
  • x-axis is time (us)

13
Turn-off Waveforms
  • Given at different temperatures and load currents
  • x-axis is time (us)

14
Power Converter Modelling
  • IGBT model used in full converter modelling
  • Simulation of every switching event is too
    time-consuming.
  • Look-up table of losses is used instead
  • Generated from device models in MATLAB/Simulink.
  • Gives losses as a function of load current and
    temperature.
  • Simple converter/heatsink model then simulates
    device temperature.
  • Rapid and accurate estimation of device
    temperature for whole load cycle.

Simulation controller
Converter simulation
Look-uptable
EXTERNAL CONDITIONS
LOSS DATA
Device temp.
Power diss.
Compact models
Heatsink model
System modelling
Device modelling
15
Look-up Table of Losses
  • IGBT power losses (W) for whole switching cycle
    plotted as a function of load current (A), duty
    ratio and temperature (C).

16
Full System Simulation
  • Example is hypothetical electric vehicle, running
    standard Federal Urban Driving Schedule.
  • Simple drive model gives inverter electrical
    conditions.
  • Resulting IGBT temperature profile plotted in
    relation to the vehicle speed.
  • Peaks in temperature correspond to
    acceleration/deceleration.

17
Conclusions
  • Accurate modelling of device losses
  • Temperature-enabled
  • Proven over a wide range of conditions
  • Model can be used to predict behaviour
  • Already demonstrated with integrated
    optimisation.
  • Integration with system simulation.
  • Whole system runs in MATLAB and Simulink.
  • Look-up table decouples device and system
    simulation.
  • Future work will investigate device reliability
  • Based on device temperature profiles and thermal
    cycling data for device packaging.
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