Manipulation and Characterization of Molecular Scale Components

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Manipulation and Characterization of Molecular
Scale Components
Islamshah Amlani
Motorola Labs Tempe, Arizona, USA
40th Design Automation Conference Anaheim,
California June 2 6, 2003
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Emerging Technology Sequence
After ITRS 2001 Edition (http//public.itrs.net)
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Why Molecular Electronics?

• Traditional scaling to sub 10 nm regime very hard
  and too costly
• CMOS technology needs a low cost ultra-low power
  successor
• Paradigm shift required for device technology and
  system architecture
• Molecular Electronics is a viable solution

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Molecular Electronics Toolbox
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Roadmap Milestones for ME
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ME Memory/Logic Architectures

• Digital CMOS look-alikes
• Complimentary CNTFET
• Deterministic logic states (digital)
• Probabilistic logic states (quasi-analog)
• Cellular Automata
• Biologically Induced design (i.e. viral particle,
  DNA)
• Random Assembly, Software Configuration
• Others

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ME Architecture
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ME Architecture
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How can we test small number of molecule for
molecular electronics applications?
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Self Assembled Monolayers (SAM)
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Molecular Test-bed
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Molecular Test-bed
From Reed et al., Yale Univ. and Rice University
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Hybrid Assembly Technique
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AC Trapping of Au Nanoparticles
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Hybrid Assembly Technique
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Memory Effects using the Test Molecule
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I (nA)
0
-50
0
1
2
-1
-2
V (V)
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Carbon Nanotubes (CNTs)
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Carbon Nanotubes (CNTs)
Various Forms of Carbon
Graphite
Nanotube
Buckyball C60
Diamond
From Smalley (Rice Univ.)

• Buckyballs discovered in mid 80s, but CNTs are
  relatively new (early 90s).
• Diameter 1 nm, but can be gt 1 µm long.
• Great electrical conductors -gt quantum wires.
• Ends can be chemically modified for selective
  attachment to other molecules or nanoparticles.
• Versatile building block for molecular
  electronics.

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CNT Circuits
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CNT Circuits
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CVD Grown CNT Devices
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SWNT Devices via Selective Placement
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Silicon MOSFET vs CNT FET
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Various SET Systems
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Single Electron Charging Effects
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Small Gap SWNT Sample
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Charging in p-type Region

• E add e2/CS DE 25 35 meV
• DE hvF/4L(linear dispersion relation) 6 meV
• Simple CBO model CS CS CD CG 7.9 aF,
  e2/CS 20 meV
• Transition between quantum to classical CB 50
  100 K ? DE 4.5 8 meV

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CBOs in n-type Region
Beating and peak splitting is observed in
metallic and semiconducting two-dot systems
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