STMicroelectronics Lighting Web Seminar October 10th, 2005

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STMicroelectronicsLighting Web SeminarOctober
10th, 2005
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Agenda
Applications overview

• Main Sub-segments

• Standard Topologies / Typical Schematics

• Devices Functions

• Suggested Part Numbers

Power Bipolar Transistors

• Main Parameters definition

• Switching characteristics

• SOA curves

Power Mosfets

• Main Parameters definition

• Dynamic Characteristics

• SOA curves

• Nomenclature

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ST Solutions for
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Lighting Dimmers
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AC Light Dimmer

• Triacs
• Phase angle switching
• BTA10-600SW
• BTA12-600SW

Diacs Triac Triggering DB3 SMDB3
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DC Light Dimmer
Controller Microcontroller 8 bits ST7LITE
series Curr. Mode PWM Controllers L5991 TSM006
TSM007 UC284xx UC384xx
IGBT 600V std speed - low drop STGDxNB60S
STGFxNB60S
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Touch Control Light Dimmer

• Triacs
• Phase Angle Switching
• BTA10-600SW
• BTA12-600SW

Controller Microcontroller 8 bits ST7LITE
series
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Fluorescent Lamp Ballasts
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Advanced / Dimming
Power Factor Controller Transition /Average
Cur. Mode L6561 L4981 L6562
Diode in PFC stage STTHxxR06 STTHxxL06
Mosfet in PFC stage STPxNK40Z
STPxNM60 STPxNK50Z STPxNK90Z
Power Supply Voltage Regulator L4989 L7805
L4941 LM2931
Communication Interface Microcontroller 8 bits
ST7LITE series ST7DALI
Ballast Controller Microcontroller 8 bits
ST7LITE series
Mosfets Half Bridge STPxNK40Z
STPxNK60Z STPxNK50Z STPxNM60
Level Shifter Half Bridge Driver L638x
L6569 L6571 L6574
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Driven
Power Factor Controller Transition /Average
Cur. Mode L6561 L4981 L6562
Mosfet in PFC stage STPxNK40Z STPxNM60
STPxNK50Z STPxNK90Z
Diode in PFC stage STTHxxR06 STTHxxL06
Ballast Controller Half Bridge Driver L6569
L6571 L6574
Mosfets Half Bridge STPxNK40Z STPxNK60Z
STPxNK50Z STPxNM60
Communication Interface Microcontroller 8 bits
ST7LITE series ST7DALI
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Self Oscillating
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Half-Bridge Voltage Fed
Power Factor Controller Transition /Average
Cur. Mode L6561 L4981 L6562
Mosfet in PFC stage STPxNK40Z STPxNM60
STPxNK50Z STPxNK90Z
Diode in PFC stage STTHxxR06 STTHxxL06
Diode Start-up STTH1L06 STTH110
Bipolars Half Bridge BUL118D ST13005
BUL116D BUL128D ST13007 BUL138 BUL118
BUL128
Diac Start-up DB3 SMDB3
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Half-Bridge Current Fed
Power Factor Controller Transition /Average
Cur. Mode L6561 L4981 L6562
Mosfet in PFC stage STPxNK40Z STPxNM60
STPxNK50Z STPxNK90Z
Diode in PFC stage STTHxxR06 STTHxxL06
Diode Start-up STTH1L06 STTH110
Bipolars Half Bridge BUL742A BUL1102E BU1203E
BUL742C BUL1101E BUL213
Diac Start-up DB3 SMDB3
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Push-Pull

• Power Factor Controller
• Transition /Average Cur. Mode
• L6561 L4981
• L6562

Diode in PFC stage STTHxxR06 STTHxxL06
Mosfet in PFC stage STPxNK40Z STPxNK50Z
STPxNM60 STPxNK90Z
Bipolars Push-Pull BUL1102E BUL903ED BUL742C
BUL1203E BUL1603ED BUL216 BUL7216
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LEDs
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LEDs - Voltage Source
Converter Voltage Regulator ICs Vertical
intelligent Regulators L497x VIPER12
VIPER22A L597x VIPER50
VIPER53 VIPER100
Const. Current Driver Standard Logic - CMos
STP08C596 STPIC6A259 STP16C596 STPIC6C595
STPIC44L02
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LEDs - Current Source
Converter Voltage Regulator ICs Vertical
intelligent Regulators L497x L597x
VIPER12 VIPER22A L6902 L6925D
VIPER50 VIPER53 L6926 TSM103
VIPER100
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Industrial HID Lamp Ballast
Level Shifter Driver L638x L6569 L6571
L6574
Mosfet Buck Converter STPxNK90Z

• Diode
• Buck Converter
• STTH8R06
• STTH302

Power Supply Voltage Regulator L4989 L7805
L4941 LM2931
Power Factor Corrector Transiton/ Avg. Cur.
Mode L6561 L4981 L6562
Current Control PWM UC384xx
Communication Interface Microcontroller 8 bits
ST7LITE series
Mosfets Full Bridge STPxNM50 STPxNM60
Controller Microcontroller 8 bits ST7LITE
series
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Halogen Transformer

• Diac
• Start-up
• DB3
• SMDB3

• Diode
• Start-up
• STTH1L06
• STTH110

Bipolars Bridge BUL38D BUL58D BUL654 BUL39D
BUL59 ST13007 BUL49D BUL810 BUL85D ST13009
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CFLs
Bipolars Half Bridge STLxx ST13003 BUL116D
BUL118 ST13005 BUL128 Complementary Pair
Solution ST83003/ST93003
Diac Start-up DB3 SMDB3
Diode Start-up STTH1L06 STTH110
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Emergency Lighting
Controller Microcontroller 8 bits ST7LITE
series
Boost Converter PWM Mosfet
Diode UC384xx STP40NF10 STTHxxR06 STP40NS15
Mosfets Half Bridge STPxNK40Z
STPxNK60Z STPxNK50Z STPxNM60
Power Factor Corrector Transition Mode L6561
L6562
Battery Charger PWM Mosfet UC384xx
STP40NF10 STP40NS15
Ballast Controller Bridge Driver L6569 L6571
L6574
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Automotive HID
Level Shifter Half Bridge Driver L638x L6569
L6571 L6574
Current Control PWM Controller UC384xx
Diode DC/DC Converter STTHxxR06 STTHxxL06
Power Supply Voltage Regulator L4989 L7805
L4941 LM2931
Mosfets/IGBTs Full Bridge STP14NK50
STGDxNM60S STP8NM50 STGPxNM60S
Communication Interface Microcontroller 8 bits
ST7LITE series

• Mosfet
• DC/DC Converter
• STP40NF10
• STP40NS15

Controller Microcontroller 8 bits ST7LITE
series
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Why should I choose ST?
Market leadership

• More than 20 years experience in the Lighting
  market

• Recognized leadership in this segment

• Preferred Supplier for the main players Worldwide

• Cost effective structures and technologies

Products

• Complete products portfolio to cover all the
  main sub-segments

• Kit solution for each application

• High quality standard products

• New packages for better performances and lower
  cost

Support

• Dedicated website with literature and
  documentation

• Dedicated Application Lab in each region

• Customized support for board analysis and test

• Application notes, demo-boards and design
  references

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Power Bipolar Transistors Medium / High Voltage

VCEO400 800V VCES700 1700V
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Absolute Maximum Ratings
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Medium / High Voltage Bipolar Transistors
VCEO400 800V VCES700 1700V
VCEO is the maximum voltage which can be applied
to the device between collector and emitter when
the base is open
Definitions

VCES is the maximum voltage withstanding by the
device between collector and emitter when the
base is short-circuited to the emitter
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Medium / High Voltage Bipolar Transistors
VCEO400 800V VCES700 1700V
VCBO is the maximum voltage which can be applied
to the device between collector and base when the
emitter is open
Definitions
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Medium / High Voltage Bipolar Transistors
VCEO400 800V VCES700 1700V
IC (nominal collector current) is typically the
current through the device when hfe5 _at_ VCE1V
Definitions


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Medium / High Voltage Bipolar Transistors
VCEO400 800V VCES700 1700V

I
Definitions
is the max current through the device in every
working condition and its value is about 1.5 2
times the nominal one.
CM
V

is the max emitter-base voltage withstanding by
the device with IC 0
EBO
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Medium / High Voltage Bipolar Transistors
VCEO400 800V VCES700 1700V

P
Definitions
is the power dissipation the device is able to
handle so that TjltTjmax if the case of the device
is locked at 25C.
tot
For practical applications this definition is
unrealistic, but useful for comparison purposes
between different devices.
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Base Drive Characteristics
How to use the device to have better
performance?

1)
ON State


a) the operative IC current should be ICN 0.3
0.7
b) the current base IBon must guarantee the
correct saturation of the device with values in
the range IC/10 lt IB lt IC/5

.
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Base Drive Characteristics
How to use the device to have better
performance?
2)
OFF State
a) if the max applied voltage is ltVCEO then
VBE must be lt 0V when turning off
b) if the max applied voltage is VCEO lt V lt VCES
then VBE must be lt -1.5V, with suggested value in
the range between -3V and -7V
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Switching Characteristics
Turn on operation
Typically the turn-on is not a critical point if
the device is correctly driven as stated for the
ON State operation.
Turn off operation
It is the most critical phase in the switching
conditions.
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Switching Characteristics
Turn off operation
Parameters definitions
Storage time
It is the time needed to remove all the carriers
from the base of the device.

a) It is directly proportional to IBon
b) It is inversely proportional to IBoff
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Switching Characteristics
Turn off operation
Parameters definitions

Fall time

Standard definition time that the current IC
needs to reduce its ON value from 90 to 10.

Practical consideration at turn-off, all the
current in the device should be considered (100
- 0) for power dissipation purposes.
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SOA Characteristics
The SOA is a region including all the possible
non-destructive working points of the device.
Outside this area the component will be
damaged. A device can be stressed either when a
forward bias is applied to its base or when a
reverse one is applied. To take in account both
phenomena it is necessary to define a SOA (Safe
Operating Area) for each of this conditions
1)
FBSOA
2)
RBSOA
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FBSOA
The FBSOA is the region where the device can
operate
safely while its base is forward biased.
This area is also function of the conduction
time, in fact
for each time pulse, the junction will be at a
temperature
lt
TJmax
, if the case temperature is at 25C and
working operation is inside the corresponding
FBSOA.
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FBSOA
I
(A)
C
Single Pulse 10ms 1ms
100µs 10µs
I
C max
I
C
N
D.C. OPERATION
Isb
V
(V)
CE
V
CEO
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FBSOA
Is/b phenomenon
Besides, this area has a deviation from its
theoretical calculation, because from a certain
collector voltage, the current distribution on
the die is not uniform anymore, but for such
voltages, in some points the junction reaches
higher temperature than the others.
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RBSOA
The RBSOA is the region where the device can
switch-off safely with its base reverse biased.
The RBSOA describes in a diagram IC VCE the
maximum collector current which can be
switched-off versus the VCE voltage. It is
important to highlight that to define the RBSOA
the load must be inductive and the voltage
clamped.

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RBSOA
RBSOA can be divided in 2 areas
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RBSOA
Area 1
It is defined by the VCE maximum value which
allows to switch-off ICMAX , and it is called
VCEW



Depending on the technology, VCEW can be less,
equal or greater than VCEO value.

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RBSOA
Area 2
It is defined by all the decreasing IC values
which can be switched-off for voltages greater
than VCEW and up to VCES value. The IC value
corresponding to the VCES value is ICmin. ICmin
is also depending on the technology.
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RBSOA
RBSOA versus driving characteristics
Area 1) decreases in VCEW when 1) the device is
oversaturated 2) during the switching-off the
VBEoff and the IBoff are high
Area 2) increases in ICmin when VBEoff and the
IBoff increase, reaching the max value when IBoff
IC
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RBSOA
RBSOA variation due to different VBEoff
Vbeoff -7V
Vbeoff -5V
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Power MOSFET Technical Training Datasheet
Overview
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Maximum Ratings
Represent the extreme capability of the devices.
To be used as worst conditions (single parameter)
that the design should guarantee will not be
exceeded. only VDS VDGR may be exceeded in
limited avalanche conditions
Never exceed !!!!!!!!!!!!
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The avalanche breakdown voltage of STs
PowerMOSFET is always higher than its voltage
rating due to normal production process margins.
For the Drain-Gate Voltage capability (Rgs to
avoid floating gate)
In order to achieve high forecasted reliability
the worst case operating voltage should be lower
than the maximum one. The maximum voltage during
turn off should not exceed 70 to 90 of the rated
voltage. This derating is suggested by the years
of experience.
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Exceeding Vgs may result in permanent device
degradation due to oxide breakdown and
dielectric rupture.
The real oxide breakdown capability is higher
than this value, and is related to the oxide
thickness but this value, with a reasonable
guardband, is the 100 TESTED warranted one
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PtotdT/Rthjc(150-25)/Rthjc
derating1/Rthjc

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Tj must be always lower than 150ºC
Reflects a minimum device service lifetime.
Operation at conditions that guarantee a junction
temperature less than Tjmax may enhance long term
operating life.

The majority of reliability tests are done at
maximum junction temperature, especially the HTRB
(High Temperature Reversed Bias) and HTFB (High
Temperature Forward Bias). These test results are
used as input information for calculation of
acceleration factors in different reliability
models. In order to achieve high forecasted
reliability the maximum operating temperature
should be lower than the maximum one. For
example, by theoretical models, reducing the
junction temperature by 30C will improve the
MTBF (Mean Time Between Failure) of the MOSFET by
an order of magnitude.
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Limited by Ptot Rdson
Limited also by wire size to avoid any fuse
effect
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Maximum dv/dt capability during diode reverse
recovery (dynamic dv/dt)
To be distinguished two kind of dv/dt (static and
dynamic)
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Due to the false turn-on, the device falls into
the current conduction state, and in severe
cases, high power dissipation develops in the
device and creates destructive failure.
Static dv/dt
a) False turn on
b) Parasitic transistor turn on
If the parasitic bipolar transistor is turned on,
the breakdown voltage of the device is reduced
from BVCBO to BVCEO which is 50 60 of BVCBO
. If the applied drain voltage is larger than
BVCEO, the device will be brought into the
avalanche breakdown, and if the drain current
cannot be limited externally, the device could be
destroyed by the second breakdown of parasitic
bipolar.
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Diode recovery dv/dt
The value of di/dt and dv/dt becomes larger as Rg
is reduced.
The device is destroyed by the simultaneous
stresses such as high drain current, high drain
source voltage and the displacement current of
the parasitic capacitance.
Highest Stress point
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Thermal resistance
Thermal model for transient takes into account
thermal capacitances
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Rthjc1/0.323.1 K/W
K0.1
ZthkRth
V I(Tj-Tc)/Zth
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VRon(_at_Tj)I
Rthjc1/0.323.1 K/W
K1
K0.1
ZthkRth
V I(Tj-Tc)/Zth
K0.04
K0.01
Allowed but not reachable region
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Iar, defined as the maximum current that can flow
through the device during the avalanche
operations without any bipolar latching
phenomenon.
EAS (Energy during Avalanche for Single Pulse) is
defined as the maximum energy that can be
dissipated in the device during a single
avalanche operation, at the Iar and at the
starting junction temperature of 25C, to bring
the junction temperature up to the maximum one
stated in the absolute maximum ratings.
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Tracer waveform
As junction temperature increases, BV also
increases linearly,
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Threshold voltage VGS(th) is the minimum gate
voltage that initiates drain current flow.
VGS(th) has a negative temperature coefficient
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RDS(on) is not constant vs Id
RDS(on) has a positive temperature coefficient
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Ciss CGD CGS Coss CDS CGD Crss CGD
G
Temperature variations have very little effect
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It is used to determine the amount of charge,
defined as Qg, required to bring the Ciss from
0V to 10V
10V
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MOSFET sales type nomenclature
ST
P
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N
F
03
L
Special Features
L Logic Level 10V Drive Optimized LL Logic
Level 4.5V Drive Optimized V Super Logic Level
(2.5V 2.7V Drive) FD Fast Diode ? D for new
products
PACKAGE
C TSSOP8 T SOT23-6L N SOT-223 L
PowerFLAT SJ PowerSO-8 S SO-8 DT4 DPAK
(Tape Reel) BT4 D2PAK (Tape Reel) V
PowerSO-10 Q TO-92 D-1 IPAK B-1 I2PAK P
TO-220 PFP TO-220FP F TO-220FP for new
products W TO-247 Y Max247 E ISOTOP
Breakdown VOLTAGE divided by 10

• with the exception of
• 55V and 75V
• TSSOP8, SOT23-6L, SO-8

TECHNOLOGY (optional)
E EHD1 (STripFET 1st generation) F EHD2
(STripFET 2st generation) H EHD3 (STripFET 3rd
generation) FS EHD2 Schottky Diode S
PowerMESH Medium Volt B PowerMESH I C
PowerMESH II CZ PowerMESH III KZ
SuperMESH M MDmesh MN MDmesh II
Channel Polarity
N N-Channel P P-Channel DN or DP Dual N-Ch
or Dual P-Ch C Complementary Pair
Indicative Current Range
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for more information and documentation please
visit our website athttp//www.st.com/lighting
Thanks!