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OUTLINE

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VA characteristic is -2x1023 F-2 V-1, the intercept is 0.84V, and A is 1 mm2, ... a pn-diode is forward biased, then suddenly turned off at time t = 0. Because of ... – PowerPoint PPT presentation

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Title: OUTLINE


1
Lecture 20
  • OUTLINE
  • pn Junctions (contd)
  • small-signal model
  • transient response
  • turn-off
  • Reading Chapters 7, 8

2
Small-Signal Model of the Diode
Small signal equivalent circuit
i

va
C
R1/G
?
Small-signal conductance
3
Review Charge Storage in pn-Diode
4
  • 2 types of capacitance associated with a pn
    junction
  • CJ depletion capacitance
  • (due to variation of depletion charge)
  • CD diffusion capacitance
  • (due to variation of stored minority charge in
    the quasi-neutral regions)
  • For a one-sided pn junction, QP gtgt QN
  • so Q QP QN ? QP

5
Depletion Capacitance
What are three ways to reduce Cdep?
6
Total pn-Junction Capacitance
i

va
R1/G
?
  • CD dominates at moderate to high forward biases
  • Cdep dominates at low forward biases, reverse
    biases

7
CJ-vs.-VA (Reverse Bias)
8
Example
If the slope of the (1/Cdep)2 vs. VA
characteristic is -2x1023 F-2 V-1, the intercept
is 0.84V, and A is 1 mm2, find the lighter and
heavier doping concentrations Nl and Nh.
Solution
9
Summary Small Signal Model
Depletion capacitance
Conductance
Diffusion capacitance
10
Transient Response of pn Diode
  • Suppose a pn-diode is forward biased, then
    suddenly turned off at time t 0. Because of
    CD, the voltage across the pn junction depletion
    region cannot be changed instantaneously.
  • The delay in switching between
  • the ON and OFF states is due
  • to the time required to change
  • the amount of excess minority
  • carriers stored in the
  • quasi-neutral regions.

11
Turn-Off Transient
  • In order to turn the diode off, the excess
    minority carriers must be removed by net carrier
    flow out of the quasi-neutral regions and/or
    recombination
  • Carrier flow is limited by the switching
    circuitry

12
Decay of Stored Charge
  • Consider a pn diode (Qp gtgt Qn)

Dpn(x)
i(t)
ts
t
vA(t)
t
For t gt 0
ts
13
Examples (qualitative)
Decrease tp
Increase IF
Increase IR
i(t)
i(t)
i(t)
ts
ts
ts
t
t
t
14
Storage Delay Time ts
  • ts is the primary figure of merit used to
    characterize the transient response of pn
    junction diodes
  • By separation of variables and integration from t
    0 to t ts, noting that
  • and making the approximation
  • We conclude that
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