Ar -induced sputtering yield of graphite target

1
Ar-induced sputtering yield of graphite target
Discharge gas Argon Substrate biased voltage
-200 V Working pressure 3.0mTorr
2
Ar-induced sputtering yield of graphite target
(Contd)
Discharge gas Argon Forwarded RF power 750 W
Working pressure 3.0mTorr
3
YJiont dependence of film thickness
Discharge gas Argon Y Sputtering yield Jion
Ion impinging flux t Deposition time