Studies of Interface Structure and Properties of Thin Films

1
Studies of Interface Structure and Properties of
Thin Films
Theodosia Gougousi, Department of Physics, UMBC
The atomic layer deposition of HfO2 films on
native oxide covered GaAs(100) surfaces using
TEMAHf and H2O, or TDMAHf and H2O processes
results in the consumption of the native Ga and
As surface oxides. ALD of HfO2 on passivated
GaAs surfaces in either HF or NH4OH solutions
results in an oxide-free interface. This
observation has significant technological
implications since deposition of similar HfO2
films on etched Si surfaces commonly results in
the growth of interfacial SiO2.
TEMAHf H2O
TEMAHf H2O
UMBC Physics