Title: Structured Materials Industries, Incorporated
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2- Structured Materials Industries, Incorporated
- is a small business
- Metal Organic Chemical Vapor Deposition (MOCVD)
systems and components - oxides, carbides, metals, nitrides, and so on.
- In-house Applications Laboratory supports
customers - - several systems
- develops materials and processes
- analytic and processing capabilities.
- We have sold systems, components, materials,
processes, devices other services - We have several strategic partnerships and
collaborations to develop and implement advanced
device material technology and ensuing products
to support our customers
3MBE or PVD Deposition
Spin Mist Deposition
MOCVD
AL CVD
4MOCVD Process
M1Rx M2Ry e M1M2 volatile by-products etc
Compound Semiconductor
Metalorganic precursor(s)
- Precursors in vapor form transported to
deposition plane - Hot deposition plane decomposes precursors to
deposit film - Element partial pressures/ratio in gas phase
control composition depends on T, residence
time and other factors - Precursors are volatile compounds containing the
desired metal and other elements forming only
gaseous reaction products containing C, H,
and/or N - Physical form and vapor pressure determines best
delivery method - Gas ? cylinder (pressure atm)
- Liquid ? bubbler (vapor pressure few to hundreds
of Torr) - Solid ? sublimator or flash evaporator (mTorr to
several Torr)
5Comparison of Reactor Types
Horizontal Vertical (with or
without rotation)
High Speed Rotation is preferred for efficiency
and laminar flow
6Modeling of Deposition Systems
(a) (b) (c)
(d) (e) (f)
Figure 8 Examples of modeling generated at
SMI (a) 12 in disk reactor at 20 torr, 600 rpm,
10 slm, 850 K disk temperature axial velocity
profile at fixed height and streamlines (b) Same
as (a) but operating at 10 atm axial velocity
distribution and streamlines (c) 24 in disk
reactor at 50 torr, 600 rpm, 10 slm, 850 K
platter temperature, axial velocity distribution
prediction and streamlines (d) Inverted
reactor, same conditions as A velocity vectors
and streamlines (e) 16½ in disk reactor operated
at 50 torr, 750 rpm, 180 slm, 850 K disk
temperature, with 15 mm inlet height above
platter-axial velocity distribution and
streamlines (f) Detail of inlets and jets
coalescence for the A reactor- precursor inlet
velocity 2 m/s, uniform flow velocity 1 m/s
axial velocity, velocity field (arrows) and
streamline.
7Rotating Disk Reactor MOCVD
Courtesy of Sandia National Laboratories
8RDR-MOCVD and Radial Injection Flow Zones Assure
Optimization for Uniformity
Large Area Uniform films Routinely achieved
Uniformity Plot
Summation of films deposited from each concentric
zone/ring allows uniformity to be achieved and
finely tuned for routine production using simple
repeatable controls
9RDR-MOCVD and Heating Zones Assure Optimization
for Uniformity
150mm
By focusing on precise control of the flow,
temperature and pressure, SMI CVD systems achieve
excellent film uniformity
10Manufacturing and Scalability
Metal Organic Chemical Vapor Deposition
(MOCVD) Chemical Vapors brought to a Hot Surface
to Decompose and thereby Form a Desired Film SMI
predominantly uses High Speed Rotating Disk
Reactor viscous drag pumps the gases to the
surface - countering buoyancy and generating
uniform streamlines promoting
efficiency Distributed reactant injection within
uniform showerhead flow Temperature controlled
reactor Uniform wafer heating
11MOCVD SYSTEM
- UHV Construction
- Fully Automatic
- Feedback Control
- Fully Enclosed
- Safe
- Plasma Option
- UV Option
- Demonstrated Results
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13IN-HOUSE DEMONSTRATION PROCESS
DEVELOPMENT MOCVD EQUIPMENT
Research Reactors
Production Systems
3 Chamber cluster tool --12
susceptor Dedicated ZnO p-type system Dual
research reactor 12 and 5 susceptors 20
x 4 tape drive deposition system Optical CVD
coating system III-V and GaN dual reactor
system Tube diffusion reactor Vertical diffusion
reactor Electro-optic RD reactor Evaporation
Chamber Multi-source sputtering chamber
Stand Alone
Cluster Tools
14Table of elements showing the range of material
compositions that can be deposited using SMI's
MOCVD technology.
15MOCVD advantages for ZnO
- Can get amorphous/poly (low temp, 300oC) or epi
(higher temp, 600oC). - Doping is controllable.
- Can make smooth, pinhole-free films, or
nanowires, based on process conditions.
PL linewidth as good as best single crystals
(0.49 meV)
Nano-wire ZnO on silicon
Smooth Al2O3/ZnO film on sapphire
16A new system for InGaN
Plasma activation pre-cracking optional
17Prototype Reactor Built, Closed space,
Results Demonstrated
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19GaN epi-wafer morphology improvement
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21(a)
(c)
(b)
22High Efficiency InGaN Multijunction Solar Cells
Nitride based
- Identification and Significance of the Innovation
- Maximum eficiency, robust solar cells are needed
for space and terrestrial power generation - The InGaN material system has only recently been
shown to span the 0.7 to 3.4 eV range making
full spectrum solar single/multi-junction solar
cells possible in this one material system
Process tool
Solar cell
Full spectrum solar cells
- Applications
- Space
- More robust satellite power systems
- Potentially higher efficiencies
- Terrestrial
- Power systems
- Laser wireless power transmission systems
- Technical Issues
- InGaN composition control
- p- and n- doping
- Junction(s)
- Device design optimization
- Thick layers
- Substrates
23Summary
SMI MOCVD tools demonstrated for wide range of
materials, which have many existing and
developing applications
- MOCVD has and is growing oxide films
successfully, a wide range of precursors and
alloys/dopants utilized, doping n- and p-type has
been demonstrated - MOCVD can control crystalline, morphological,
optical, and electrical properties over wide
ranges - Nitride processes now being developed with
target applications - SMI RD Tools now also address Nitride
deposition tools
24- Structured Materials Industries, Inc.
- 201 Circle Drive N, Unit 102 and 103
- Piscataway, NJ 08854
- Voice 732 302 9274
- Fax 732 302 9275
- E-mail GSTompa_at_structuredmaterials.com
- www.StructuredMaterials.com