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Structured Materials Industries, Incorporated

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Title: Structured Materials Industries, Incorporated


1
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2
  • Structured Materials Industries, Incorporated
  • is a small business
  • Metal Organic Chemical Vapor Deposition (MOCVD)
    systems and components
  • oxides, carbides, metals, nitrides, and so on.
  • In-house Applications Laboratory supports
    customers -
  • several systems
  • develops materials and processes
  • analytic and processing capabilities.
  • We have sold systems, components, materials,
    processes, devices other services
  • We have several strategic partnerships and
    collaborations to develop and implement advanced
    device material technology and ensuing products
    to support our customers


3
MBE or PVD Deposition
Spin Mist Deposition
MOCVD
AL CVD
4
MOCVD Process
M1Rx M2Ry e M1M2 volatile by-products etc
Compound Semiconductor
Metalorganic precursor(s)
  • Precursors in vapor form transported to
    deposition plane
  • Hot deposition plane decomposes precursors to
    deposit film
  • Element partial pressures/ratio in gas phase
    control composition depends on T, residence
    time and other factors
  • Precursors are volatile compounds containing the
    desired metal and other elements forming only
    gaseous reaction products containing C, H,
    and/or N
  • Physical form and vapor pressure determines best
    delivery method
  • Gas ? cylinder (pressure atm)
  • Liquid ? bubbler (vapor pressure few to hundreds
    of Torr)
  • Solid ? sublimator or flash evaporator (mTorr to
    several Torr)

5
Comparison of Reactor Types
Horizontal Vertical (with or
without rotation)
High Speed Rotation is preferred for efficiency
and laminar flow
6
Modeling of Deposition Systems
(a) (b) (c)
(d) (e) (f)
Figure 8 Examples of modeling generated at
SMI (a) 12 in disk reactor at 20 torr, 600 rpm,
10 slm, 850 K disk temperature axial velocity
profile at fixed height and streamlines (b) Same
as (a) but operating at 10 atm axial velocity
distribution and streamlines (c) 24 in disk
reactor at 50 torr, 600 rpm, 10 slm, 850 K
platter temperature, axial velocity distribution
prediction and streamlines (d) Inverted
reactor, same conditions as A velocity vectors
and streamlines (e) 16½ in disk reactor operated
at 50 torr, 750 rpm, 180 slm, 850 K disk
temperature, with 15 mm inlet height above
platter-axial velocity distribution and
streamlines (f) Detail of inlets and jets
coalescence for the A reactor- precursor inlet
velocity 2 m/s, uniform flow velocity 1 m/s
axial velocity, velocity field (arrows) and
streamline.
7
Rotating Disk Reactor MOCVD

Courtesy of Sandia National Laboratories
8
RDR-MOCVD and Radial Injection Flow Zones Assure
Optimization for Uniformity
Large Area Uniform films Routinely achieved
Uniformity Plot
Summation of films deposited from each concentric
zone/ring allows uniformity to be achieved and
finely tuned for routine production using simple
repeatable controls
9
RDR-MOCVD and Heating Zones Assure Optimization
for Uniformity
150mm
By focusing on precise control of the flow,
temperature and pressure, SMI CVD systems achieve
excellent film uniformity
10
Manufacturing and Scalability
Metal Organic Chemical Vapor Deposition
(MOCVD) Chemical Vapors brought to a Hot Surface
to Decompose and thereby Form a Desired Film SMI
predominantly uses High Speed Rotating Disk
Reactor viscous drag pumps the gases to the
surface - countering buoyancy and generating
uniform streamlines promoting
efficiency Distributed reactant injection within
uniform showerhead flow Temperature controlled
reactor Uniform wafer heating
11
MOCVD SYSTEM
  • UHV Construction
  • Fully Automatic
  • Feedback Control
  • Fully Enclosed
  • Safe
  • Plasma Option
  • UV Option
  • Demonstrated Results

12
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13
IN-HOUSE DEMONSTRATION PROCESS
DEVELOPMENT MOCVD EQUIPMENT
Research Reactors
Production Systems
3 Chamber cluster tool --12
susceptor Dedicated ZnO p-type system Dual
research reactor 12 and 5 susceptors 20
x 4 tape drive deposition system Optical CVD
coating system III-V and GaN dual reactor
system Tube diffusion reactor Vertical diffusion
reactor Electro-optic RD reactor Evaporation
Chamber Multi-source sputtering chamber
Stand Alone
Cluster Tools
14
Table of elements showing the range of material
compositions that can be deposited using SMI's
MOCVD technology.
15
MOCVD advantages for ZnO
  • Can get amorphous/poly (low temp, 300oC) or epi
    (higher temp, 600oC).
  • Doping is controllable.
  • Can make smooth, pinhole-free films, or
    nanowires, based on process conditions.

PL linewidth as good as best single crystals
(0.49 meV)
Nano-wire ZnO on silicon
Smooth Al2O3/ZnO film on sapphire
16
A new system for InGaN
Plasma activation pre-cracking optional
17
Prototype Reactor Built, Closed space,
Results Demonstrated
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19
GaN epi-wafer morphology improvement
20
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(a)
(c)
(b)
22
High Efficiency InGaN Multijunction Solar Cells
Nitride based
  • Identification and Significance of the Innovation
  • Maximum eficiency, robust solar cells are needed
    for space and terrestrial power generation
  • The InGaN material system has only recently been
    shown to span the 0.7 to 3.4 eV range making
    full spectrum solar single/multi-junction solar
    cells possible in this one material system

Process tool
Solar cell
Full spectrum solar cells
  • Applications
  • Space
  • More robust satellite power systems
  • Potentially higher efficiencies
  • Terrestrial
  • Power systems
  • Laser wireless power transmission systems
  • Technical Issues
  • InGaN composition control
  • p- and n- doping
  • Junction(s)
  • Device design optimization
  • Thick layers
  • Substrates

23
Summary
SMI MOCVD tools demonstrated for wide range of
materials, which have many existing and
developing applications
  • MOCVD has and is growing oxide films
    successfully, a wide range of precursors and
    alloys/dopants utilized, doping n- and p-type has
    been demonstrated
  • MOCVD can control crystalline, morphological,
    optical, and electrical properties over wide
    ranges
  • Nitride processes now being developed with
    target applications
  • SMI RD Tools now also address Nitride
    deposition tools

24
  • Structured Materials Industries, Inc.
  • 201 Circle Drive N, Unit 102 and 103
  • Piscataway, NJ 08854
  • Voice 732 302 9274
  • Fax 732 302 9275
  • E-mail GSTompa_at_structuredmaterials.com
  • www.StructuredMaterials.com
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