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DEFECTS IN CRYSTALS

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Let Hf be the enthalpy of formation of 1 mole of vacancies. zero. For minimum. Larger contribution ... User R instead of k if Hf is in J/mole. Assuming n N. Using ... – PowerPoint PPT presentation

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Title: DEFECTS IN CRYSTALS


1
DEFECTS IN CRYSTALS
  • Point defects
  • Line defects
  • Surface Imperfections

2
PROPERTIES
Structure sensitive
Structure Insensitive
E.g. Density, elastic modulus
E.g. Yield stress,
3
CLASSIFICATION OF DEFECTS BASED ON DIMENSIONALITY
3D(Volume defects)
1D(Line defects)
2D(Surface / Interface)
0D(Point defects)
Twins
Surface
Vacancy
Dislocation
Interphaseboundary
Precipitate
Disclination
Impurity
Faultedregion
Frenkeldefect
Dispiration
Grainboundary
Voids / Cracks
Twinboundary
Schottkydefect
Stackingfaults
Thermalvibration
Anti-phaseboundaries
4
SYMMETRY ASSOCIATED DEFECTS
Screw
Translation
Rotation
AtomicLevel
Dislocation
Disclination
Dispiration
SYMMETRY ASSOCIATED DEFECTS
Inversion
Mirror
Rotation
Twins
Multi-atom
5
Based on origin
DEFECTS
Random
Structural
Based on position
DEFECTS
Random
Ordered
6
THE ENTITY IN QUESTION
GEOMETRICAL
PHYSICAL
E.g. spin, magnetic moment
E.g. atoms, clusters etc.
7
Vacancy
Interstitial
Non-ioniccrystals
Impurity
Substitutional
0D(Point defects)
Frenkel defect
Ioniccrystals
Other
Schottky defect
  • Imperfect point-like regions in the crystal
    about the size of 1-2 atomic diameters

8
Vacancy
  • Missing atom from an atomic site
  • Atoms around the vacancy displaced
  • Tensile stress field produced in the vicinity

Tensile StressFields ?
9
Relativesize
Interstitial
Compressive StressFields
Impurity
Substitutional
Compressive stress fields
  • SUBSTITUTIONAL IMPURITY ? Foreign atom
    replacing the parent atom in the crystal ?
    E.g. Cu sitting in the lattice site of FCC-Ni
  • INTERSTITIAL IMPURITY ? Foreign atom
    sitting in the void of a crystal ? E.g. C
    sitting in the octahedral void in HT FCC-Fe

Tensile StressFields
10
Interstitial C sitting in the octahedral void in
HT FCC-Fe
  • rOctahedral void / rFCC atom 0.414
  • rFe-FCC 1.29 Ã… ? rOctahedral void 0.414 x
    1.29 0.53 Ã…
  • rC 0.71 Ã…
  • ? Compressive strains around the C atom
  • Solubility limited to 2 wt (9.3 at)

Interstitial C sitting in the octahedral void in
LT BCC-Fe
  • rTetrahedral void / rBCC atom 0.29 ? rC 0.71
    Ã…
  • rFe-BCC 1.258 Ã… ? rTetrahedral void 0.29 x
    1.258 0.364 Ã…
  • ? But C sits in smaller octahedral void-
    displaces fewer atoms
  • ? Severe compressive strains around the C atom
  • Solubility limited to 0.008 wt (0.037 at)

11
ENTHALPY OF FORMATION OF VACANCIES
  • Formation of a vacancy leads to missing bonds
    and distortion of the lattice
  • The potential energy (Enthalpy) of the system
    increases
  • Work required for the formaion of a point defect
    ? Enthalpy of formation (?Hf) kJ/mol or eV /
    defect
  • Though it costs energy to form a vacancy its
    formation leads to increase in configurational
    entropy
  • ? above zero Kelvin there is an equilibrium
    number of vacancies

12
  • Let n be the number of vacancies, N the number
    of sites in the lattice
  • Assume that concentration of vacancies is small
    i.e. n/N ltlt 1
  • ? the interaction between vacancies can be
    ignored
  • ? ?Hformation (n vacancies) n . ?Hformation (1
    vacancy)
  • Let ?Hf be the enthalpy of formation of 1 mole
    of vacancies

?S ?Sthermal ?Sconfigurational
?G ?H ? T ?S
Larger contribution
?G (putting n vacancies) n?Hf ? T ?Sconfig
For minimum
13
?
Assuming n ltlt N
Considering only configurational entropy
User R instead of k if ?Hf is in J/mole
?S ?Sthermal ?Sconfigurational
Using
Independent of temperature, value of 3
14
  • Certain equilibrium number of vacancies are
    preferred at T gt 0K

15
Ionic Crystals
  • Overall electrical neutrality has to be
    maintained

Frenkel defect
  • Cation (being smaller get displaced to
    interstitial voids
  • E.g. AgI, CaF2

16
Schottky defect
  • Pair of anion and cation vacancies
  • E.g. Alkali halides

17
Other defects due to charge balance
  • If Cd2 replaces Na ? one cation vacancy is
    created

Defects due to off stiochiometry
  • ZnO heated in Zn vapour ? ZnyO (y gt1)
  • The excess cations occupy interstitial voids
  • The electrons (2e?) released stay associated to
    the interstitial cation

18
  • FeO heated in oxygen atmosphere ? FexO (x lt1)
  • Vacant cation sites are present
  • Charge is compensated by conversion of ferrous
    to ferric ion
  • Fe2 ? Fe3 e?
  • For every vacancy (of Fe cation) two ferrous
    ions are converted to ferric ions ? provides
    the 2 electrons required by excess oxygen

19
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