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Current perpendicular to plane CPP GMR

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Main Difference between CIP and CPP: charge accumulation in CPP interfaces ... Definition of bulk and interface anisotropy and ? : Model ( Valet & Fert) ... – PowerPoint PPT presentation

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Title: Current perpendicular to plane CPP GMR


1
Current perpendicular to plane (CPP) GMR
667 Spintronics Presentation
Weigang Wang 11/22/04
2
Outline
  • CPP V.S. CIP
  • Model ( Valet Fert)
  • Normal and Inversed CPP GMR
  • CPP sample fabrication and control of magnetic
    states

3
Why CPP?
Do not like in the CIP case, the current will not
be shunted by the Normal Metal layer, which is
not contribute to MR.
4
Model ( Valet Fert) Main elements
  • spin dependent scattering resulting in two
    current channels
  • Series resistor
  • Main Difference between CIP and CPP charge
    accumulation in CPP interfaces resulting in extra
    interface resistance.
  • In most case, spin diffusion length (SDL) gtgt Mean
    free path ( MFP) SDL gtgt t ( layer thickness).
    SDL 1000A _at_ low T
  • Definition of bulk and interface anisotropy ß and
    ?

5
Model ( Valet Fert)Start from Boltzmann
equation, single domain FM layer, parabolic band
structure

Isolated Interface spin accumulation
significantly reduces the current asymmetry.
Interface resistance
6
Model ( Valet Fert)
Bulk spin-dependent scattering
For P state, in FM and NM
AP
P
7
Equivalent resistance array bulk scattering only
( analogy to traffic)
8
Equivalent resistance arraywith both bulk
interface scattering
Symmetric or asymmetric ?
9
All together ( M bilayers)
Agree well with experiment
10
Determination of ß and ?
11
Interface V.S. Bulk ß V.S. ?
Interface resistance dominates in usual
thicknesses (a few 10A) Bulk effect will take
over when thicknesses a few 100A
12
Normal and Inversed CPP GMR
13
CPP sample fabrication and control of magnetic
states
  • Three ways for fabrication
  • Sandwich between crossed S.C. stripes (good
    contact, but low T)
  • Photo-lithography ( R-T, but contact R problem)
  • nanowire
  • To get P and AP state
  • Different thickness of FM
  • Exchange pinning

14
References
  • J. Bass, W.P. Pratt Jr. Physica B 321 (2002) 18
  • S.F. Lee, et al., Phys. Rev. B 52 (1995) 15426.
  • T. Valet, A. Fert, Phys. Rev. B 48 (1993) 7099.
  • S.F. Lee, et al., J. Magn. Magn. Mater
  • A. Fert, et al., Phys. Rev. B 52 (1995) 6513.
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