Selfassembled vertical GaNAlGaN nanorod

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Self-assembled vertical GaN/AlGaN nanorod
GaN/AlGaN nanorod
Intensive research on nitrides semiconductors
has taking place due to their unique properties.
Although there are many commercial products such
as blue emitting diodes and lasers available, the
current nitride devices are still far from ideal
quality. In this work, we demonstrate and analyze
high quality wurtzite GaN/AlGaN MQWs (Multi
Quantum Wells) nanorod grown on Si (111)
substrates along c-direction by molecular beam
epitaxy using nitrogen plasma. The nanorod is
studied by field emission scanning electron
microscopy (FE-SEM), x-ray diffraction (XRD), and
transmission electron microscopy (TEM).
The FE-SEM image of GaN/AlGaN nanorod.
X-ray theta-2theta measurements with fringes
corresponding to the multi quantum wells period.
TEM picture of GaN/AlGaN nanorod. It shows the
MQWs structure clearly in the TEM picture. (a)
well (GaN) (b) barrier (AlGaN). The thickness of
well on nanorod is about 8 (nm) (16 c-LC (lattice
constant)).
Conclusion
GaN/AlGaN MQWs nanorod is successfully
fabricated. AlGaN/GaN heterostructures are
confirmed by TEM image and fringes analysis.
L. W. Tu, Min Chen Department of Physics and
Center for Nanoscience and Nanotechnology,
National Sun Yat-Sen University, Kaohsiung,
Taiwan 80424, R.O.C. E-mail lwtu_at_mail.nsysu.edu.t
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Electro-optical Materials and Devices Physics
Laboratory