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Effects of Onchip Inductance on Power Distribution Grid

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Tr: 50, 66, 100ps (constant power dissipation) P/G wire: 10mm wide, 1mm thick, 100mm pitch ... Uniform power dissipation. Unbalance power dissipation. on-chip L ... – PowerPoint PPT presentation

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Title: Effects of Onchip Inductance on Power Distribution Grid


1
Effects of On-chip Inductance on Power
Distribution Grid
  • Atsushi Muramatsu Kyoto Univ.
  • Masanori Hashimoto Osaka Univ.
  • Hidetoshi Onodera Kyoto Univ.
  • hasimoto_at_ist.osaka-u.ac.jp

2
Inductance in power grid analysis
  • Conventionally
  • Inductance of package and bonding
  • dominant
  • considered
  • Inductance of on-chip wire
  • many elements yet small
  • not considered
  • Recently
  • Increase in clock freq.
  • higher freq. component of noise
  • wL increases as freq. increases
  • Reduction in L of package and bonding
  • Relatively on-chip L increases

Advance in packages
QFP
FCBGA (Bump Array)
Q on-chip inductance important?
3
Previous works
  • Mezhiba, Kluwer 2004
  • Outline of on-chip inductance aware analysis
  • Noise propagates as a wave
  • Y.-M. Lee, TCAD02
  • Fast simulation based on transmission line theory
  • W.H. Lee, ISQED04
  • Discussion on wire structures
  • C.W. Fok, Intl Journal of High Speed Elec.
    Sys 02
  • Discussion on error due to ignoring on-chip
    inductance
  • Effect of on-chip inductance becomes significant
    when package impedance is small.

4
Contribution of this work
  • Experimental studies
  • To evaluate effect of on-chip inductance under
    various power consumption distribution
  • To reveal that decap. position is important to
    mitigate on-chip inductance effect as well as to
    suppress power noise
  • To study robustness of power grid with respect to
    grid pitch, wire area and PG spacing

5
Power grid structure
  • Power and ground wires are routed in pairs.
  • Only topmost power/ground grid is considered.
  • Bumps are uniformly attached at some of crossing
    points.

6
Equivalent circuit model
7
Experimental setup(single current source)
  • A single current source excited
  • All NAND2 gates in 3,000mm2 switch
  • Tr 50, 66, 100ps (constant power dissipation)
  • P/G wire 10mm wide, 1mm thick, 100mm pitch
  • 130nm technology, supply voltage 1.2V
  • 2x2mm2 chip, 99 bumps for P/G
  • Each bump 0.5nH, 1W
  • Full PEEC model all mutual inductances
    considered.
  • Half area is occupied by NAND2 gates

8
Difference between w/ and w/o on-chip inductance
  • Big difference between w/ and w/o on-chip
    inductance
  • Without on-chip inductance, not strong dependence
    on Tr.

With on-chip L, quadratic dependence on Tr
9
Decap size, position and noise amplitude
  • Decap 100mm far hardly works.
  • Decap at current source works well.

Decap position is important for noise
suppression when on-chip inductance is
significant.
10
Experimental setup(realistic power consumption)
  • 0.13mm technology, 1.2V supply voltage
  • Chip size 6x6mm2, 100100 bumps for P/G
  • Each bump 0.5nH, 1W
  • PG wires pitch 300mm, width 30mm, thickness 1mm
  • Full PEEC model all mutual inductances
    considered
  • Half area is occupied by NAND2 gates
  • Power consumption models
  • Uniform 20 of transistors switching uniformly
  • Unbalance 50 of transistors switching at
    center, and 10 at periphery. Total power
    consumption is the same with uniform case
  • Current transition time Tr 50ps

11
Power consumption distribution and power noise
Uniform power dissipation
Unbalance power dissipation
on-chip L effect small
on-chip L effect significant
12
Why on-chip L hardly affects voltage fluctuation
13
Decap placement and power noise
Adaptive decap placement
Uniform decap placement
work well on-chip L effect small when decap is
enough
not work efficiently on-chip L effect large
14
Comparison between PEEC and decoupled models
When paired PG wires are coupled perfectly,
self-inductance L-M, mutual-inductance
0 (decoupled model)
Difference exists, yet not significant. Decoupled
model is used for larger grid analysis.
15
Grid pitch and power noise
Wire area is fixed to 20.
Noise voltage is reduced as grid pitch decreases.
16
Wire area and power noise
10 reduction
7 reduction
Grid pitch 300mm
Grid pitch 50mm
  • Wire area increase reduces noise, yet not
    drastically.
  • Finer grid is more efficient than large wire area.

17
Conclusion
  • Evaluated effects of on-chip inductance
  • Decap position is important
  • Non-uniform power consumption distribution
    increases effects of on-chip L
  • Adaptive decap insertion based on local power
    consumption mitigates on-chip L effects
  • Grid pitch is more important than wire area for
    improving power grid robustness.
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