Silicon Sensor with Readout ASICs for EXAFS Spectroscopy PowerPoint PPT Presentation

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Title: Silicon Sensor with Readout ASICs for EXAFS Spectroscopy


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Silicon Sensor with Readout ASICs for EXAFS
Spectroscopy
Gianluigi De Geronimo, Paul OConnor Microelectron
ics Group, Instrumentation Division, Brookhaven
National Laboratory, Upton, NY Rolf H.
Beuttenmuller, Zheng Li Semiconductor Lab.,
Instrumentation Division, Brookhaven National
Laboratory, Upton, NY Anthony J. Kuczewski, D.
Peter Siddons National Synchrotron Light Source,
Brookhaven National Laboratory, Upton, NY
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EXAFS
Typical fluorescence EXAFS spectroscopy geometry
Sample
2 20 keV
Sensor
  • Electronics
  • front-end
  • processing
  • readout

3
RESRATE
Resolution vs Rate
4
Resolution vs Rate
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Optimum pixellation
6
Optimum pixellation
7
20mm
quadrant (8?1296 pixels)
96-channel front-end (3 ? 32 channel ASICs)
Peltier
Si n-type high resistivity wafer 250µm thick, N
384 p ?1mm?1mm pixels, Cp ? 700-1000fF gaps
10µm, 30µm, 50µm
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Beam through
sample
sensor
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INTERCONNECT
Interconnecting pixel to front-end electronics
integrated metal lines
strips
direct wire bonding
bump bonding
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Sensor ASIC photo
one quadrant
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ASIC
ASIC channel overview
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ASIC layout cells
100µm
DAC cell
4 ? 6-bit DACs analog - 590µm
100µm
COUNTER cell
DACS digital - 170µm
5 ? COMPARATORS - 130µm
100µm
3 ? 24-bit COUNTERS - 690µm
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ASIC photo
charge preamplifier
shaper with BLH
discriminators and DACs
counters
32 channels, 3.6 ? 6.3 mm2
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Measured resolution
50µm-gap, Cp ? 700fF, Ci-bond ? 50-200fF, Ci-pad
? 220fF
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55Fe spectrum
50µm-gap, Cp ? 700fF, Ci-bond ? 50-200fF, Ci-pad
? 220fF
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ASIC overview
  • self adaptive continuous reset
  • high order shaper
  • band-gap referenced output baseline
  • output baseline stabilizer (BLH)
  • test capacitors
  • analog and pixel leakage monitors
  • plug play (fully self biasing)
  • serial interface
  • counters readout
  • gain / peaking-time setting
  • monitors test enable
  • channel masking
  • DACs setting
  • token or chip-select mode

Technology CMOS 0.35µm 3.3V 2P4M
Size ? 3.6 ? 6.3 mm2
MOSFETs ? 180,000
Channels 32
power / channel ? 8 mW
Discriminators three / channel (1 thr., 2 win.)
threshold adjustment four 6-bit DACs (1.6mV step)
threshold dispersion (adj) ? 2.5 electrons rms
Counters three / channel
bits per counter 24
Gain (settable) 750, 1500 mV/fC
Peaking time (settable) 0.5, 1, 2, 4 µs
ENC _at_ 1µs ? 14 12/pF electrons rms
ENC _at_ 4µs ? 11 6/pF electrons rms
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READOUT
Readout
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Readout interface
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Automatic threshold equalization
after correction ? ? 2.5e- rms
before correction ? ? 170e- rms
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New EXAFS detector
? 400 channels, lt 300 eV, gt 10MHz
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Current EXAFS detector
head - preamplifiers
? 100 channels, gt 350 eV, lt 1 MHz
rack shapers
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Summary
  • New detector for EXAFS
  • monolithic Si sensor, 400-mm2 active area
  • ? 400 1-mm2 pixels
  • 32-channel ASICs
  • First results (single quadrant)
  • ENC ? 11 6/pF e- rms _at_ 4µs
  • FWHM lt 300eV _at_ rate lt 100 kHz/pixel
  • threshold dispersion lt 2.5 e- rms
  • Future work
  • one ASIC iteration
  • pixel gap selection (10, 30, 50 µm)
  • Peltier cooler assembly / test
  • four quadrant (12 ASICs) assembly / test
  • on-field test at NSLS (BNL)
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