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NIRT: Photon and Plasmon Engineering in Active Optical Devices based on Synthesized Nanostructures

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Title: NIRT: Photon and Plasmon Engineering in Active Optical Devices based on Synthesized Nanostructures


1

NIRT Photon and Plasmon Engineering in Active
Optical Devices based on Synthesized
Nanostructures Marko Loncar1, Mikhail Lukin2 and
Hongkun Park3 1Harvard Electrical Engineering,
2Harvard Physics, 3Harvard Chemistry
  • Program Goals
  • Understanding and engineering of fundamental
    properties of light generation and control in
    active optical nanostructures
  • Development of robust and practical devices and
    systems for optical and quantum optical
    communication and information processing (e.g.
    single photon sources, low-power/single-photon
    switches, nano-lasers).
  • Answer important questions that pertain to
    hybrid nanostructures integration of different
    fabrication techniques, integration across
    different length-scales, efficient information
    exchange between nano-structures and macro-world,
    light-matter interaction on a nanoscale.
  • Approach
  • Combination of bottom-up synthesized nanoscale
    light emitters and metallic (Ag, Au) nanowires
    with top-down nanofabricated advanced structures
    for light localization, such as nano-scale
    surface plasmons and photonic crystals.
  • Bottom-up synthesized nanocrystal quantum dots
    (QDs) offer number of advantages over
    conventional epitaxially grown QDs, including
    better uniformity, ease of fabrication and
    integration with passive optical platforms, and
    multi-wavelength operation.
  • Synthesized metallic nanowires can be
    crystalline, and are superior to top-down
    fabricated metallic waveguides (lower loss)
  • Photonic crystal cavities can enhance radiation
    from QDs due to large Purcell factor enabled by
    their large quality factor and small mode volume.

Anti-bunching single photon source Second-order
self-correlation function G(2)(t ) of QD
fluorescence. The number of coincidences at t 0
goes almost to zero, confirming that the QD is a
single-photon source. The width of the dip
depends on the total decay rate Gtotal and the
pumping rate R. Second-order cross-correlation
function between fluorescence of the QD and
scattering from the NW end. This data was taken
by looking at coincidences between photon
emission from the QD (red circle) and NW end
(blue circle). A.Akimov et al, Nature, 450, 402
(2007)
Purcell factor as a function of wire diameter.
?630nm
Schematic of hybrid quantum plasmonic device that
combines bottom-up synthesis and top-down
nanofabrication.
  • Normalized energy flux for an emitter
  • positioned (from top to bottom) at distances k0d
    0002, 0.2, and 0.7 from the nanowire.
  • The first plot is mostly dark and indicates that
    the emitter decays primarily nonradiatively.
  • The middle plot demonstrates efficient
    excitation of guided plasmons at the final radius
    R.
  • The last plot exhibits the typical lobe pattern
    associated with radiative decay.
  • D. E. Chang et al., PRL, 97, 053002 (2006)

Effective mode-index (neff) of Ag nanowires
(?630nm) vs NW radius (r). Insets mode profile
for r50nm and r150nm. In contrast to dielectric
waveguides, Ag NW supports guided mode even when
rltlt ?. This ultra-confined plasmon mode is ideal
for optical wiring of nanoscale quantum
emitters.
Optimized efficiency of single-photon generation
vs R, including coupling to the dielectric
waveguide. Solid line theoretical efficiency
using a nanowire. Dotted line theoretical
efficiency using a nanotip.
  • Broader Impact
  • Powerful and unique educational opportunities
    for students
  • interdisciplinary nature of our NIRT exposes
    students to theoretical work, nanostructure
    synthesis, device physics and engineering,
    nanofabrication and optical characterization.
  • team members co-advise students and hold
    bi-weekly joint group meetings
  • undergraduate students and minorities
    participate in the efforts of our NIRT through
    the NSF supported Research Experience for
    Undergraduates program.
  • The team members give public lectures and
    organize science projects at local public
    schools, mentor high school students and work
    with high school teachers (NSF RET)
  • The team members participate in ongoing Harvard
    outreach programs, as well as engage the
    business-oriented public (e.g. Harvard
    Nanotechnology Business Forum, Harvard
    Industrial Outreach Program).
  • The knowledge and techniques developed in this
    program will find application in other fields,
    including life sciences (e.g. surface-plasmon
    enhanced sensing techniques), advanced
    photolithography, particle manipulation
    (tweezing), etc.


Future Directions
Schematic diagram of transistor operation
involving a three-level emitter. In the storage
step, a gate pulse consisting of zero or one
photon is split equally in counter-propagating
directions and coherently stored using an
impedance-matched control field (t ). The storage
results in a spin flip conditioned on the photon
number. A subsequent incident signal field is
either transmitted or reflected depending on the
photon number of the gate pulse, owing to the
sensitivity of the propagation to the internal
state of the emitter. D. E. Chang et al., Nature
Physics, 3, 807 (2007)
Hybrid photonic crystal /semiconductor
nanocrystal single photon source, ultra low-power
switch, and quantum/ optoelectronics networks.
  1. Schematic of single photon source based on
    nitrogen-vacancy (NV) color center in diamond
  2. High-Q (Qgt20,000) optical cavity design for
    diamond nanophotonics.
  3. Ultra-compact optical cavity fabricated in
    single-crystal diamond.
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