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Lecture Problem 30

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Phosphorus is diffused into a thick slice of silicon with no ... If the temperature remains at 1100 C but the depth is increased ... Plug into Solution to ... – PowerPoint PPT presentation

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Title: Lecture Problem 30


1
Lecture Problem 30
  • Noel Godinez

2
Problem Statement
  • Phosphorus is diffused into a thick slice of
    silicon with no previous phosphorus in it at a
    temperature of 1100C. If the surface
    concentration of the phosphorus is 1.0x1018
    atoms/cm3 and its concentration at 1µm is
    1.0x1015 atoms/cm3, how long must the diffusion
    time be? D 3.0x10-13 cm2/s for P diffusing into
    Si at 1100C. If the temperature is dropped to
    1050C, what is the diffusion time? If the
    temperature remains at 1100C but the depth is
    increased to 2µm, what is the diffusion time?

3
Theory
  • Solution to Ficks 2nd Law for a semi-infinite
    solid in which the surface concentration is held
    constant

4
Theory
  • Temperature dependence of diffusivity

5
Solution
  • What we know

6
Solution x 1 µm, T 1100oC
  • Plug into Solution to Ficks 2nd Law

What happens to the diffusion time when the
temperature drops to 1050oC?
7
Solution x 1 µm, T 1050oC
  • Calculate the new diffusivity

Over 3 times longer with only a 4.5 drop in
temperature!!
8
Solution x 2 µm, T 1100oC
  • The depth is now doubled

4 times as long with a 100 increase in depth!
9
Conclusion
  • Diffusion time is much more sensitive to
    temperature changes than to depth changes.
  • Activation energy for diffusion is specific to
    what is being diffused as well as the host
    substance (in this case P into Si).
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