Title: Irradiation%20Goals
1Irradiation Goals
- Confirm that the breakdown performance improves
with dose-Done - Check that breakdown does not appear after
inversion on n-type sensors-Done - Confirm Ibias, Vdep changes as expected for
proton/neutron irradiation - Test CCE, resolution, etc. performance after
proton irradiation with pixel telescope
2Proton Irradiation
Phi Sensors
R Sensors
- Irradiated 2 sets (n-type,p-type) of phi sensors
and R sensors - Phi sensor 1.47x1015 p/cm2 ? 9x1014 niel/cm2 (7
years _at_ 8mm) - R sensor 1.4x1015 p/cm2 ? 8.5x1014 niel/cm2 (6.6
years _at_ 8mm) - Built 1 set into double-R and double-Phi modules
for FNAL test beam and laser test - Other set used for CV measurements
3N-type R Sensor CV
After 30 min_at_60 C equiv. 11 day_at_20 C Dep V560 V
With no annealing, it is difficult to say if part
depletes. The three clear kinks in the CV
correspond to unirradiated left , partly
irradiated middle, and fully irradiated right of
sensor. So annealed to lower depletion point.
4P-type R Sensor CV
After 30 min_at_60 C equiv. 11 day_at_20 C Dep V530 V
With no annealing, it is difficult to say if part
depletes. The three clear kinks in the CV
correspond to unirradiated left , partly
irradiated middle, and fully irradiated right of
sensor. So annealed to lower depletion point.
5Laser Test-Proton Irradiation
N-type Irr
- Laser tested double-R and double-phi modules
while cooled (-7 C at sensor) - Stability of laser focus, intensity difficult to
control - See similar fraction (Irr/Non-Irr) of charge in
both p-type and n-type - Somewhere between 50-70
- 8.5x1014 niel/cm2
- From previous proton irradiaton on minis expect
40 (1.8x1015 niel/cm2) - 68 (6.6x1014 niel/cm2)
- With annealing to minima, expect 10-15 more
charge collected - Will try to anneal during FNAL test-beam
N-type non-Irr
P-type non-Irr
P-type Irr
6Proton Irradiation Conclusions
- From RD48 damage constants, expect 480 V
depletion voltages after annealing for measured
dose of proton for n-type and p-type silicon - We measured somewhere between 530-560 V for the
n-type and p-type - From previous proton irradiations of n-in-p
minis, we expect to collect 60 of the max
charge - From laser, get 50-70 pre-annealing
- Will confirm with test beam
- Thus, I would expect modules to be fully
efficient after this dose (6.6 years _at_ 8 mm)
7 Irradiation Results-IV
P-type
5x1013 /cm2
1.5x1014 /cm2
N-type
1.5x1014 /cm2
1.5x1014 /cm2
8Low dose (4-5x10-13 neq/cm2, expected 5x10-13
neq/cm2)
High dose (1.3-1.6x10-14 neq/cm2, expected
1.5x10-14 neq/cm2)
Error dominated by uncertainty in annealing time
9 Neutron Irradiation Results-CV
P-type
VdepPre81V VdepPost167 V DVdep86 V
VdepPre81V VdepPost393 V DVdep312 V
5x1013/cm2
1.5x1014/cm2
N-type
VdepPre21V VdepPost299 V DVdep320 V
VdepPre25V VdepPost277 V DVdep302 V
1.5x1014 /cm2
1.5x1014/cm2
10Irradiation Results
- Irradiation with neutrons at Ljubljaba
- Breakdown behaviour gone
- P-type and n-type IV similar after doses
- For neutron irradiation, p-type sensors have
higher Vdep - 390 vs. 280-300 after 1.5x1014 neq/cm2
- Expect Vdep to be similar for n and p-type
sensors with 1014 neq/cm2 proton irradiations - Changes in depletion voltages close to expected
- From TDR, 1.3x1014neq/cm2 in 5 month LHC dose
DVdep250 V - Scaling for 5x1013neq/cm2, measured DVdep86 V,
expected DVdep96 V - Scaling for 1.5x1014neq/cm2, measured
DVdep302-320 V, expected DVdep288 V - Differences between measured and expected may be
due to annealing
- Irradiation of 136 kRads with 6 MeV photons
- Hard breakdown behaviour improved greatly due to
radiation - Charge in oxide
- Soft breakdown behaviour (semi-ohmic) improved
only in 1 of 3 sensors (2 unchanged) - Should improve with neutron/proton irradiation
which causes more bulk damage
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