C

1
(No Transcript)
2
Introduction of Auxiliary Emitter Resistors

• The introduction of REx ( 10 of RGx) leads to
• Limitation of equalising currents i 10 A
• Damping of oscillations

C
G
RE2
RE1
REn
AE
V2
Vn
V1
E
3
Introduction of Auxiliary Emitter Resistors

• The introduction of REx leads also to a negative
  feedback
• The equalising current i leads to a voltage drop
  VREx at the Emitter resistors REx

fast IGBT
slow IGBT
C
G
AE
VRE2
VRE1
E
4
Introduction of Auxiliary Emitter Resistors

• The introduction of REx leads also to a
  negative feedback
• The voltage drop VRE1 reduces the gate voltage of
  the fast IGBT and decreases therewith its
  switching speed.
• The voltage drop VRE2 increases the gate voltage
  of the slow IGBT and makes it faster.
• During switch off vice versa.

fast IGBT
slow IGBT
C
G
VRE1
VRE2
AE
E
5
Additional proposals

• The introduction of Z-Diodes
• prevents over voltages at the gate contacts.
• Therefore these clamping diodes must be placed
  very close to the module connectors

6
Additional proposals

• The introduction of Shottky-Diodes parallel to
  REx
• helps to balance the emitter voltage during short
  circuit case.
• Dimensioning 100V, 1A.

7
(No Transcript)
8
(No Transcript)
9
Multi-level-inverter
application
10
Topology of a multi level inverter (Three step)
11
Cells in series
12
Robicon princip
Rectifier Circuit Simple diode rectifier with
various three-phase windings 2Q Drive
capability Patent rights Robicon Semiconductors
in use standard IGBT Diode arrangement Transfo
rmer in use Different secondary windings, STAR,
DELTA, Z, Number of Cells number of cell in
series 100 (as by Robicon)
13
Multi cell system like Robicon
14
Vienna rectifier with H-brigde
Rectifier Circuit Vienna rectifier 2Q Drive
only Patent rights Zener and Prof Kolar ETH
Zürich Semiconductors in use Not standard IGBT
Diode arrangement Transformer in use All
secondary windings are equal Number of Cells
Same number of cell as by Robicon
15
Double booster with Multi level inverter
Rectifier Circuit Three-phase PFC with doable
booster 2Q Drive only Patent rights SEMIKRON
International Semiconductors in use standard
IGBT Diode arrangement Transformer in use All
secondary windings are equal Number of Cells
1/2 number of cell as by Robicon
16
New SEMiX - Flexibility
Multilevel switch
17
New SEMiX Module with Semikron Patent
Halfbridges 2 x Choppers
Multi-Level-Modul
18
Multi-Level-leg with standard SEMiX module
- Terminal GB module
DC bus capacitor
Terminal

19
Multi Level Inverter

• Why multi level inverter
• All Semiconductors must have the half blocking
  voltage
• With Multi Level Topologies are high output
  frequency achievable
• Small output filter
• 3 potentials available (/-/centre point)
• Minimization of rotor losses caused by current
  ripple
• Through asynchronous clocking higher output
  frequencies achievable
• EMC behavior
• Potential difference only 50 of standard
  inverter
• Reduction of audible motor noise
• Reduction of ball bearing leakage current

20
EMC consideration during development of inverter
21
EMC Standards - Generic
Previous no. Present no. Explanations and Remarks
EN 50081-1 EN 50081-1 Generic emission standard Residential, commercial and light industry
EN 50081-2 EN 50081-2 Generic emission standard Industrial environment
EN 50082-1 IEC/EN 61000-6-1 Generic immunity standard - Residential, commercial and light industry
EN 50082-2 IEC/EN 61000-6-2 Generic immunity standard Industrial environment
- CISPR/IEC 61000-6-3 Generic standards Emission standard for residential, commercial and light industrial environments
- IEC 61000-6-4 Generic standards Emission standard for industrial environments
22
EMC Standards - Immunity Tests
Previous no. Present no. Explanations and remarks
IEC 801-2 IEC/EN 61000-4-2 Electrostatic discharge immunity test
IEC 801-3 ENV 50140 IEC/EN 61000-4-3 Radiated, radio-frequency, electromagnetic field immunity test
ENV 50204 IEC/EN 61000-4-3 Radiated electromagnetic field from digital radio telephones Immunity test
IEC 801-4 (1988) IEC/EN 61000-4-4 Electrical fast transient/burst immunity test
IEC 801-5 (draft) ENV 50142 IEC/EN 61000-4-5 Surge immunity test
IEC 801-6 (draft) ENV 50141 IEC/EN 61000-4-6 Immunity to conducted disturbances, induced by radio-frequency fields
IEC/EN 61000-4-8 IEC/EN 61000-4-8 Power frequency magnetic field immunity test
IEC/EN 61000-4-9 IEC/EN 61000-4-9 Pulse magnetic field immunity test
IEC/EN 61000-4-10 IEC/EN 61000-4-10 Damped oscillatory magnetic field immunity test
IEC/EN 61000-4-11 IEC/EN 61000-4-11 Voltage dips, short interruptions and voltage variations immunity tests
IEC/EN 61000-4-12 IEC/EN 61000-4-12 Oscillatory waves immunity test
- CISPR 24 Information technology equipment Immunity characteristics Limits and methods of measurement
23
EMC Standards - Emission Measurements
Previous no. Present no. Explanations and remarks
IEC 555-2 EN 60555-2 IEC/EN 61000-3-2 Limits for harmonic current emissions (equipment input current 16 A per phase)
IEC 555-3 EN 60555-3 IEC/EN 61000-3-3 Limitation of voltage fluctuations and flicker in low-voltage supply systems for equipment with rated current 16A
CISPR 11/EN 55011 CISPR 11/EN 55011 Industrial, scientific and medical (ISM) radio-frequency equipment Electromagnetic disturbance characteristics Limits and methods of measurement
CISPR 14/EN 55014 CISPR 14/EN 55014 Limits and methods of measurement of radio disturbance characteristics of electrical motor-operated and thermal appliances for household and similar purposes, electric tools and similar electrical apparatus
CISPR 22/EN 55022 CISPR 22/EN 55022 Limits and methods of measurement of radio disturbance characteristics of information technology (IT) equipment
24
Motor cable - correct
25
EMI rules I

• Never put input and output together
• Input on top of the inverter
• Output on bottom of the inverter
• Dont use painted housings bad connection
• Connect the isolation of transformers to ground
• Heatsink must be connected to the input terminals
  directly (PE)

26
EMI rules II

• Use snubber capacitors to avoid voltage drop in
  the DC-Bus voltage. Voltage drop will generate a
  very high dv/dt
• Use only freewheeling diodes with a soft recovery
  behavior
• Multi layer technology is avoiding stray
  inductance

27
Fast switching IGBTs

• IGBTs generates a very high dv/dt
• Long motor cable
• Isolation problems of the motor wire
• Over voltage on the motor terminal through
  reflections
• Installation of special motor filter
• Capacitors generate leakage current
• Sensitive short circuit monitoring
• Higher switching losses
• Installation of output reactor
• Ground connection
• Bad ground connection generates higher noise
  level by frequencies up to 2 MHz

28
EMC - Checklist

• Did you connect all heatsinks with ground (PE)?
• use a big surface for the connection (HF-current)
• star connection
• No painted surface - clean
• Did you install cores in the flatcables between
  controller-board and power stage
• Did you design a filter board between power stage
  and controller board?
• Did you use snubber capacitors on the /-
  terminals?
• Did you use shielded cable between motor and
  inverter?
• connect the shield on the heatsink and on the
  housing of the motor
• avoid arcing
• check all screws
• check the surface of the DC-bus-bars

29
SEMiX and
Skyper
30
The platform idea
31
The platform family (600 V, 1200 V, 1700 V)
32
All switch topologies available
Half bridge Chopper
Sixpack
33
(No Transcript)
34
New driver concept SKYPER

• Reduced to basic functions
• 30 less components
• gt less costs
• 2 IGBT-Driver versions
• SKYPER SKYPER PRO

35
How to handle a IGBT

• Information

36
How can we protect the gate?

• Information

37
Gate Emitter Resistor
38
Gate clamping
39
IGBT Gate protection
40
How should we calculate the driver?

• Proposal

41

• Which gate driver is suitable for the module SKM
  200 GB 128D ?

Design parameters fsw 10 kHz Rg 7 ?
Example for design parameters
42

• The suitable gate driver must provide the
  required
• Gate charge (QG)
• Average current (IoutAV)
• Gate pulse current (Ig.pulse)
• at the applied switching frequency (fsw)

Demands for the gate driver
43

• Gate charge (QG) can be determined from fig. 6 of
  the SEMITRANS data sheet

The typical turn-on and turn-off voltage of the
gate driver is VGG 15V VGG- -8V
15
-8

• ? QG 1390nC

1390
Determination of Gate Charge
44

• Calculation of average current
• IoutAV P / ?U ?U Ug (-Ug)
• with P E fsw QG ?U fsw
• ? IoutAV QG fsw
• 1390nC 10kHz 13.9mA

Calculation of the average current
45

• Examination of the peak gate current with minimum
  gate resistance
• E.g. RG.on RG.off 7?
• Ig.puls ?U / RG 23V / 7? 2.3A

Calculation of the peak gate current
46
Power explication of the Gate Resistor

• P tot Gate resistor
• Ptot Gate resistor I out AV x ?U
• More information

The problem occurs when the user forgets about
the peak power rating of the gate resistor. The
peak power rating of many "ordinary" SMD
resistors is quite small. There are SMD
resistors available with higher peak
power ratings. For example, if you take an SKD
driver apart, you will see that the gate
resistors are in a different SMD package to all
the other resistors (except one or two other
places that also need high peak power).
The problem was less obvious with through hole
components simply because the resistors were
physically bigger. The Philips resistor data
book has a good section on peak power ratings.
47

• The absolute maximum ratings of the suitable gate
  driver must be equal or higher than the applied
  and calculated values
• Gate charge QG 1390nC
• Average current IoutAV 13,9mA
• Peak gate current Ig.pulse 2.3A
• Switching frequency fsw 10kHz
• Collector Emitter voltage VCE 1200V
• Number of driver channels 2 (GB module)
• dual driver

Choice of the suitable gate driver
48

• According to the applied and calculated values,
  the driver e. g. SKHI 22A is able to drive
  SKM200GB128D

• Calculated and
• applied values
• Ig.pulse 2.3A_at_ Rg 7?
• IoutAV 13.9mA
• fsw 10kHz
• VCE 1200V
• QG 1390nC

Comparison with the parameters in the driver data
sheet