Integrated Power Converters for high efficiency RF Systems

1
Integrated Power Converters for high efficiency
RF Systems

• By
• Aaron Pereira
• Supervisor
• Prof. Graham Town Prof Neil Weste
• Department of Electronic Engineering
• Macquarie University, NSW, Australia.

2
Outline

• Introduction
• Background
• Solution
• Gallium Nitride Material Devices
• PA High Efficiency Modulator
• Triquint 0.25u process circuits designed
• Further Work
• Questions

3
Introduction

• MQ University Department of Electronics
• ARC Linkage Grant
• Integrated Power converters for renewable energy
  systems
• 100MHz Envelope tracking system using GaN process
  for base station applications
• Using Triquint existing 0.25u GaN process, to
  design a high frequency, high efficiency
  modulator to be integrated into a Power Amplifier
  (HEPA) module for base stations applications.

4
Background

• RF Power Efficiency

5
Quest for Power, Linearity Efficiency
Actual Size
Edge Constellation 3pi/8, rotated 8-PSK
Schematic of PA
Stauth, Sanders, "Power supply rejection for RF
amplifiers," (RFIC) Symposium, June 2006
Popovic,Zoya, High efficiency microwave PA with
dynamic power supplies, ECEN 5014, Spring 2009,
University of Colorado, Boulder
6
Amplifier Classes- A, AB,B, C, D,E,F Conduction
Angle, Efficiency
Niehenke,E, GaN Power Amplifiers Niehenke
Consulting
7
Non Linear PA v
Linear PAsCant do amplitude modulation
Can- but highly inefficient
Stauth, Sanders, "Power supply rejection for RF
amplifiers," (RFIC) Symposium, June 2006
8
Average Efficiency
9
Solution?Dynamic Power Supplies
10
Solution- Research Objective

• HPA Dynamic power supply MMIC
• Use Triquint Semiconductor 0.25u GaN Process to
  fabricate a monolithic solution.

MMIC Photo Courtesy if Stephen Diebold,
Karlshue Institute of Technology
11
Gallium Nitride Materials DevicesRF Power
Electronics
12
Properties of GaN
Niehenke,E, GaN Power Amplifiers Niehenke
Consulting
13
Anomalous Behaviour - Traps
Development of virtual gates wrecks havoc in
device performance
Ventury, R. PhD Thesis defence, UCSB.
14
Traps affecting FET performance
RF Dispersion
Kink effects IDS v VDS
Shift in Threshold VTH
Albahrani,S.A , Characterization of Trapping in
Gallium Nitride HEMTs, PhD Thesis, Macquarie
University, Australia 2011
15
Device Engineering- Field Plates Passivation
Niehenke,E, GaN Power Amplifiers Niehenke
Consulting
16
MQ- Arbitrary Pulsed Semiconductor Parameter
Analyser System (APSPA)
17
Pulsed I-V MeasurementsUnderstanding TQTX devices
18
Pulsed I-V Measurement (Cont.)
19
PA High Efficiency Modulator

• Design Options
• Technology
• FCC regulations
• Cost
• Modulation Schemes

20
Power Amplifier Biasing
21
Amplifier Load-linesSwitching PA as Power
Converters
22
Demonstration of Class E amplifier Electrodeless
Fluorescent Lamps
13.56 MHz Class E Amplifier 620V/ 1.4 A GaN HEMT
90 at 9W Output Power
Demonstration of Resonant Inverter Circuit for
Electrodeless Fluorescent Lamps Using High
Voltage GaN-HEMT Wataru Saito, Tomokazu Domon,
Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi,
Kunio Tsuda and Masakazu Yamaguchi
Semiconductor Company, Toshiba Corp Toshiba
Business and Life Service RD Center, Toshiba
Corp 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki
212-8583, Japan Phone [phone], FAX
81-44-549-2883, e-mail wataru3.saito_at_toshiba.co.
jp
23
DC-DC Converter ArchitectureUsing switching PAs
DC-DC Converter fabricated using FETs
non-optimized for power conversion
Popovic,Zoya, High efficiency microwave PA with
dynamic power supplies, ECEN 5014, Spring 2009,
University of Colorado, Boulder
24
PA and Modulator Integration Challenges Power
Supply Rejection Ratio (PSSR)
FCC has strict regulations regarding this.
Selection of filters and switching frequencies
critical
Stauth, Sanders, "Power supply rejection for RF
amplifiers," (RFIC) Symposium, June 2006
25
Triquint 0.25u GaN Process Circuit Designs
26
(No Transcript)
27
Circuits Design- Ring Oscillators, inverters,
tuned amplifiers
28
Circuits Designed-MMIC LayoutRing Oscillators,
Inverters, Tuned Amplifiers
29
Further Work

• Switching PAs E/F
• Class AB PA (16 Weeks)
• Filters for noise rejection (8 Weeks)
• Integration (20-24 Weeks)
• Thermal Issues (16 Weeks)
• Testing (14 Weeks)

30
Questions?