ITRS 2003 Factory Integration Chapter Electrostatic Discharge - Backup Section

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ITRS 2003 Factory Integration Chapter
Electrostatic Discharge - Backup Section

• Details and Assumptions for Technology
  Requirements

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Outline

• Problems Caused By Static Charge
• attraction of contamination
• electrostatic discharge (ESD) damage to devices
  and photomasks
• equipment malfunction due to ESD-generated
  electromagnetic interference (EMI)
• SEMI E129 Guide to Assess and Control
  Electrostatic Charge in a Semiconductor
  Manufacturing Facility
• Conclusions

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Static Charge ProblemsContamination and ESD
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Forces on a Contaminant Particle Near Charged
Surfaces
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Electrostatic Attraction200mm vs. 300mm
Particle deposition 3-6 times higher for wafers
at 10kV Particle deposition 30-60 greater at
300mm than 200mm
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Device ESD Failure Mechanisms

• Human Body Model
• human contact with a sensitive device
• Machine Model
• charged conductor contacting a sensitive device
• Charged Device Model
• device contacts ground when in an electric field
• device package is charged and device contacts
  ground

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Destruction of Silicon Due to ESD
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ESD Effects on Semiconductor Manufacturing
Photomask Damage Due to ESD
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ESD Events CreateElectromagnetic Interference
(EMI)
ESD Radiates Radio Waves and induces signals in
microprocessors and metrology tools

• Scrambled Program Instructions
• Scrambled Data
• Confusing Error Messages

• Microprocessor Lockup
• Calibration Failures
• Apparent Software Bugs

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EMI Events in Photo
Ratio - 301
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Semiconductor Equipment and Materials
International (SEMI) E129-1003
SEMI E129 Guide to Assess and Control
Electrostatic Charge in a Semiconductor
Manufacturing Facility
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SEMI E129 Guide Recommended Electrostatic
Limits
Year Node Electrostatic Discharge, nC Electrostatic Field, V/cm V/inch
2000 180 nm 2.5 - 10 200 500
2002 130 nm 2003 100 nm 2.0 1.5 375 125 300
2004 90 nm 1.0 100 250
2007 65 nm 0.5 70 175
2009 50 nm 0.25 50 125
2012 32 nm 0.125 35 88
2015 25 nm 0.1 25 63
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ITRS Technical Requirements - Electrostatics
2002
2003
Note 2003 changes shown in bold
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Conclusions

• Major elements of technology change are smaller
  device geometry, lower defect densities, larger
  wafers, faster equipment operating speeds, and
  more dependence on automation. All of these areas
  are adversely affected by the presence of static
  charge in the semiconductor factory.
• Static charge needs to be controlled before it
  becomes a barrier to new technology introduction,
  slows the ramping of new factories, or a costly
  learning experience.
• SEMI Standards is in the process of releasing
  E129 which contains electrostatic limits and
  measurement methods for the entire semiconductor
  facility.
• The technology requirements in the ITRS will
  solve the static problem in factory construction
  and in equipment design - before static charge
  can impact production.