Charge Drift in partially-depleted epitaxial GaAs detectors - PowerPoint PPT Presentation

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Charge Drift in partially-depleted epitaxial GaAs detectors

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P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics University of Surrey, Guildford, UK J.C. Bourgoin LMDH, Universit Pierre et Marie Curie, Paris, France – PowerPoint PPT presentation

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Title: Charge Drift in partially-depleted epitaxial GaAs detectors


1
Charge Drift in partially-depleted epitaxial GaAs
detectors
  • P.J. Sellin, H. El-Abbassi, S. Rath
  • Department of Physics
  • University of Surrey, Guildford, UK
  • J.C. Bourgoin
  • LMDH, Université Pierre et Marie Curie, Paris,
    France

2
Overview
  • Chemical reaction growth of thick epitaxial GaAs
    layers
  • Depletion thickness and residual impurity
    concentration
  • Performance of partially depleted detectors
  • C-V measurements of impurity concentration at low
    temperature
  • Optical probing of charge transport using a
    focussed laser

3
Potential challenges for epitaxial GaAs
  • Strengths of epitaxial GaAs
  • intermediate photon detection efficiency between
    Si and CZT/CdTe
  • metal-semiconductor contacts and device physics
    are well understood
  • epitaxial GaAs has low concentrations of native
    EL2 defect
  • source of highly uniform whole wafer material,
    compatible with flip-chip bonding and monolithic
    electronics
  • Existing problems
  • even high purity epitaxial is compensated due to
    residual impurities- does not exhibit intrinsic
    carrier concentrations
  • depletion thickness is severely limited
  • charge carrier lifetimes are reduced

4
Chemical Reaction growth of thick epitaxial GaAs
  • Epitaxial GaAs material studied in this work was
    grown by a Chemical Reaction Method by Jacques
    Bourgoin (Paris).
  • An undoped GaAs wafer is used as the material
    source, which is decomposed in the presence of
    high temperature high pressure water vapour to
    produce volatile species.
  • Typically, growth rates of lt10 mm/hr are used to
    achieve EL2 concentrations of 1013 cm-3

L. El Mir, et al, Compound semiconductor growth
by chemical reaction, Current Topics in Crystal
Growth Research 5 (1999) 131-139.
5
Whole wafer photoluminescence mapping
  • GaAs material uniformity is characterised using
    room temperature photo-luminescence mapping - a
    contact-less, whole wafer technique
  • A 25 mW 633 nm HeNe laser is focussed to 50 mm
    on the wafer
  • the wafer is mounted on an XY stage, and scanned
  • PL intensity maps at peak the band edge emission
    wavelength (870 nm) are acquired

6
PL maps of GaAs
  • Photoluminescence mapping clearly shows the
    uniformity of epitaxial GaAs compared to
    semi-insulating VGF material

Epitaxial GaAs
Bulk GaAs
H. Samic et al., NIM A 487 (2002) 107-112.
7
Calculated depletion thickness
  • This material is nominally 1-5 x 1014 cm-3-
    corresponds to a 10-20 mm depletion thickness _at_
    30V, and 15-30 mm _at_ 80V

8
Alpha particle spectra
  • 5.48 MeV alpha particles are irradiated through
    the Schottky (cathode) contact - range in GaAs
    20 mm.
  • A peltier cooler controlled the device
    temperature in the range 25C to -55C. Shaping
    time 0.5 ms.

9
Alpha particle pulse shapes
  • Alpha particle pulses at room temperature

time base 1ms per division
fast component
preamplifier
slow component
shaping amplifier
10
Alpha particle tracks
  • An un-collimated alpha particle source produces a
    characteristic double peak pulse height
    spectrum if the depletion thickness is shallower
    than the particle range

11
59.5 keV gamma spectra
  • Depth-dependent CCE produces poorly resolved
    gamma spectra

T -50C
12
Temperature dependent CV analysis
Allows the doping density ND to be extracted from
the gradient of 1/C2 vs V
13
Depletion Thickness vs Bias Voltage
14
Impurity Densities
The CV analysis confirm the shallow depletion
thicknesses achieved in these devices, and
correspond to impurity densities of 3 x 1013
cm-3 in sample S16 at low temperature
15
Focussed IR laser scans
Probe the variation in pulse shape as a function
of position from the Schottky contact, and
temperature
16
Scanning optical bench
17
Laser pulse shapes
  • T273K, 20V
  • At 60mm from cathode
  • no slow component to signal
  • At 180mm from cathode
  • charge drift times are 350ms
  • IR laser spot appears to have significant beam
    waist

18
Laser pulse shapes (2)
  • T223K, V90V
  • At 60mm from cathode
  • no slow component to signal
  • At 180mm from cathode
  • charge drift times are 350ms
  • IR laser spot appears to have significant beam
    waist

19
Pulse risetime and amplitude vs bias
20
Interaction close to the anode - inside depletion
region
21
Interaction close to n substrate - in low field
region
22
Temperature dependent pulse shapes (1)
23
Temperature dependent pulse shapes (2)
24
Conclusions
  • The epitaxial GaAs layers studied showed
    excellent uniformity, and a residual impurity
    concentration of 1-5 x 1014cm-3
  • Long electron lifetimes gt 300 ms were observed in
    the low field regions - confirms the very low EL2
    concentration
  • Lateral laser scans show
  • good charge transport in the shallow depleted
    region
  • long-lived components to the pulse shapes when
    irradiated close to n substrate - consistent
    with slow electron diffusion towards the
    substrate
  • significant penetration of the depletion region
    when cooled to -50C
  • Future work
  • further lateral scanning is required with
    focussed lasers and high resolution proton
    microbeams to quantify these phenomena
  • further modest reductions in impurity
    concentration will produce significant
    performance improvements

25
Acknowledgements
  • This work was partially funded by the UKs
    Engineering and Physics Science Research Council

26
Alpha particle spectra
  • Epitaxial GaAs pad detectors were irradiated with
    an uncollimated 241Am alpha particle source. The
    detector was mounted in a vacuum cryostat,
    attached to a peltier cooler to allow operation
    in the temperature range of 25C to -55C. Pulse
    height spectra (figure 3) were acquired using a
    conventional charge integrating preamplifier and
    spectroscopy amplifier (shaping time 0.5ms).

27
Interaction in intermediate region
28
Temperature dependent pulse shapes (2)
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