This family of 25V and 30V devices features IR

1
PRESS RELEASE
25V and 30V PQFN N-Channel Power MOSFETs for
Point-of-Load Applications
DATA SHEETS
HI-RES GRAPHIC
This family of 25V and 30V devices features IRs
latest HEXFET MOSFET silicon in a new
performance PQFN 3x3 and 5x6 packages that
deliver a high density, highly reliable and
efficient solution for DC-DC buck converters in
telecom, Netcom and high-en desktop and notebook
computer applications.
MOSFET HOME PAGE

• Features
• Industry-standard pinout resulting in
  multi-vendor compatibility
• 100 RG tested increasing reliability
• RoHS compliant containing no lead, no bromide and
  no halogen making the devices environmentally
  friendlier
• Low profile (lt1.0 mm) provides increased power
  density
• Compatible with existing surface mount
  technologies making manufacturing easier
• MSL1, industrial qualification level causing
  increased reliability
• Low RG (IRFHM831, IRFH5303, IRFH5255) reducing
  switching loss at high frequency
• Integrated MonoFETky (IRFHM831D, IRFH5250D)
  improves peak efficiency

• Advantages
• As a result of improved manufacturing technology,
  IRs new performance PQFN 3x3 package enables up
  to 60 higher load current capability than
  standard PQFN 3x3 devices in the new compact
  footprint while overall package resistance is
  significantly reduced to deliver extremely low
  on-state resistance (RDS(on).
• In addition to the low RDS(on), the new
  performance PQFN package offers enhanced thermal
  conductivity as well as improved reliability and
  is qualified to industrial standard and moisture
  sensitivity level 1 (MSL1).
• The performance PQFN package technology is also
  applied to 5x6mm footprint devices enabling
  designs requiring more current without the need
  for additional footprint compared to standard
  PQFN 5x6 devices.

November 2010