The AUIRF7739L2 and AUIRF7665S2 automotive DirectFET

1
PRESS RELEASE
Automotive DirectFET2 Power MOSFETs
DATA SHEET
The AUIRF7739L2 and AUIRF7665S2 automotive
DirectFET2 power MOSFETs deliver exceptional
power density, dual-sided cooling and low
parasitic inductance and resistance in a robust,
reliable and AEC-Q101 qualified package for
automotive applications. These first automotive
DirectFET2 devices are entirely lead-free and
offer overall system level size and cost
reductions along with superior performance and
efficiency when compared to traditional standard
plastic packaged components.
HI-RES GRAPHIC
Automotive HOME PAGE

• Features
• Advanced process technology
• Dual sided cooling
• 175?C operating temperature
• Repetitive avalanche capability for robustness
  and reliability
• Lead free, RoHS and Halogen free
• AUIRF7739L2
• Optimized for automotive motor drive, DC-DC and
  other heavy load applications
• Exceptionally small footprint and low profile
• High power density
• Low parasitic parameters
• AUIRF76652S
• Optimized for Class D audio amplifier
  applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Delivers up to 100Q per channel into 8 ohm with
  no heatsink

• Advantages
• The AUIRF7739L2 and the AUIRF7665S2 combine the
  outstanding reliability and performance of the
  proven DirectFET packaging technology with IRs
  latest trench silicon process.
• The AUIRF7339L2 in the new large can package
  delivers the industrys lowest RDS(on) of 0.7mOhm
  (typical) at 40V in a given PCB area. The large
  can features a 60 smaller footprint and 85
  lower profile than a D2Pak.
• The AUIRF7665S2 small can device is optimized for
  very low gate charge and exhibits extremely low
  parasitics for fast and efficient switching
  performance. It is ideal for automotive
  switching applications including the output stage
  of Class D Audio amplifiers as well as DC-DC
  converters and fuel injection systems.

January 2010