The PQFN 2mm x 2mm package features IR

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PRESS RELEASE
Ultra Compact PQFN2x2 Power MOSFET for Low Power
Applications
DATA SHEETS
HI-RES GRAPHIC
The PQFN 2mm x 2mm package features IRs latest
HEXFET MOSFET silicon that delivers an ultra
compact, high density and efficient solution for
a wide variety of lower power applications
including smart phones, tablet PCs, camcorders,
digital still cameras, and notebook PC, server
and network communication equipment.
MOSFET HOME PAGE

• Features
• Low RDS(on) (lt 12mO) results in lower conduction
  losses
• Low Thermal Resistance to PCB (lt 13º C/W) results
  in enabling better thermal dissipation
• Low Profile (lt 1.0 mm) results in increased power
  density
• Compatible with existing surface mount techniques
  resulting in easier manufacturing
• RoHS compliant containing no Lead, no Bromide and
  no Halogen resulting in environmentally
  friendlier
• MSL1, consumer qualification resulting in
  increased reliability

• Advantages
• Featuring a footprint of just 4mm2, the new
  PQFN2x2 devices, which are available in 20V, 25V
  and 30V with standard or logic level gate drive,
  utilize IRs latest low voltage N-Channel and
  P-Channel silicon technologies to offer very low
  on-resistance (RDS(on)), and high power density
  in line with a PQFN3.3x3.3 or PQFN5x6 package.
• The PQFN2x2 family includes P-Channel devices
  optimized for use in the high-side of load
  switches providing a simpler drive solution.
• Featuring a low profile of less than 1 mm, the
  devices are compatible with existing Surface
  Mount Techniques, feature industry-standard
  footprint and are RoHS compliant.

June 2011