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Eg1

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Title: Slide 1 Author: virginia ayres Last modified by: ayresv Created Date: 1/12/2005 5:36:10 PM Document presentation format: On-screen Show Other titles – PowerPoint PPT presentation

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Title: Eg1


1
Evac
Evac
0
0
1
1
qfs1 4.782 eV
qc1 4.07 eV
qfs2 4.592 eV
qc2 3.63 eV
2
2
3
3
EC2
4
4
EC1
Eg2 1.923 eV
EF2
EF1
Eg1 1.424 eV
5
5
EV2
EV1
6
6
2
Evac
Evac
EC2
EC1
EF2
EF1
EV2
EV1
Now that plots are accurately scaled, remove
values for clarity.
3
Align Fermi energy levels EF1 EF2
4
Put in Junction J in middle since both undoped
(intrinsic)
Junction J
5
Join Evac smoothly
Junction J
6
Anderson Model Use qc1 measuring stick to put
in EC1
Junction J
7
Anderson Model Use qc2 measuring stick to put
in EC2
Junction J
8
Put in straight piece connector
Junction J
DEC 0.44 eV
Anderson model DEC qc1 qc2 0.44 eV
9
A shallow quantum well for e- has developed in
the conduction band EC1
Junction J
DEC 0.44 eV
10
Use the energy bandgap Eg1 measuring stick to
relate EC1 and EV1
Junction J
DEC 0.44 eV
11
Use the energy bandgap Eg2 measuring stick to
relate EC2 and EV2
Junction J
12
Put straight piece connector in
Junction J
DEC 0.059 eV
Anderson model DEgap DEC DEV gt DEV DEgap
DEC DEV (1.923 1.424) 0.44 eV 0.059 eV
13
A very shallow quantum well for holes has
developed in EV2
Junction J
DEC 0.059 eV
14
(a) Band-bending diagram
Junction J
DEC 0.44 eV
DEV 0.059 eV
(b) Anderson model DEC 0.44 eV DEV 0.059 eV
15
Result is similar to n-n and p-p isotype
heterojunctions
Sze, Physics of Semiconductor Devices
16
These are the traditional n-p and p-n
heterojunctions
Sze, Physics of Semiconductor Devices
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