EPITAXY IS THE KEY

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Substrates
MOCVD/MBE Epitaxial Wafers
Epitaxy Equipment
Processed Wafers Packaged Devices
Chemicals
End User Applications
Metrology Equipment
EPITAXY IS THE KEY ENABLING STEP
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The Relative Industries of GaAs
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4" LEC grown crystal (480 mm length)
MBE MOCVD
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LD
VCSEL
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LED
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RF IC
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HEMT/HBT Application
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HEMT/HBT Characterization
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source TRW
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?????(LED)???
emitted light
electrode
n-type layer
emitting region or active layer
p-type layer
electrode
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???-Display
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Source Compound Semiconductor 2001/4
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1. ?? 2. ????? 3. ???? 4. ?? 5. ??
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GaN ?? LED
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460 470 nm GaN chip
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Ref Lumiled
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LED????
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Typical Process Steps of The Regular
(Conventional) LEDs on Sapphire
p-GaN
p-GaN
n-GaN
MQW
n-GaN
u-GaN
sapphire
u-GaN
Mesa
Semitransparent metal
Sapphire
MQW
p-GaN
n-GaN
u-GaN
p-type contact Ni/Au
sapphire
n-type contact Ti/Al
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LED ????
(2) ??????
(1) ????
ICP plasma
(3) N????
P-type
N??
n-type
(4) P????
(5) ???
P??
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LED (LIGHT EMITTING DIODE)
GaN LED IMAGE
LED ??
P-GaN
P-Contact
N-Contact
N-GaN
EMISSION PATTERN
Sapphire substrate
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electrode
cladding layer
active layer
emitted light
cladding layer
electrode
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For current confinement
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