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Self-* Systems CSE 598B

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Self-* Systems CSE 598B Paper title: Dynamic ECC tuning for caches Presented by: Niranjan Soundararajan – PowerPoint PPT presentation

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Title: Self-* Systems CSE 598B


1
Self- SystemsCSE 598B
  • Paper title Dynamic ECC tuning for caches
  • Presented by Niranjan Soundararajan

2
Abstract
  • On-chip caches are increasing in sizes
  • Protection needed in order to store correct data.
  • ECC serves as an efficient means to protect the
    data
  • ECC has its own overhead
  • Area Extra space for its logic
  • Latency ECC computations take time
  • This work deals with reducing latency involved in
    ECC computation.
  • Track the cache lines frequently accessed.
  • Dynamically turn ECC computation on and off for
    specific cache lines.

3
Background
  • Information redundancy
  • Data in the processing core is protected by
    schemes such as RMT (Redundant Multi-threading)
    12.
  • ECC protection is easy to implement for on-chip
    caches. Also size of the caches prevent them from
    being replicated 3.
  • Current evaluation shows raw FIT (Failures In
    Time) rate numbers for latches and SRAM cells to
    vary between 0.001 0.01 FIT/bit. This value
    increases with elevation. At 1.5 km FIT/bit is
    3.5x while at 10 km (airplanes) FIT/bit is 100x
    larger 4567.

4
Background
  • As processor power dissipation becomes more and
    more important, supply voltages get reduced. This
    will greatly increase the FIT/bit 89.
  • As an example, consider a 32 MB data cache. This
    cache has 222 quad-words. Let us assume that an
    SRAM cell has an average FIT rate of 0.001. The
    single-bit FIT rate for the entire cache is 0.001
    222 72 3.02 105,i.e. the MTTF is 109 /
    (3.02 105) 3311 hours 3.
  • Consider the case of large multiprocessor systems
    with tens of megabytes of caches. Protection
    becomes an important issue if the systems are
    involved in critical computations like space
    research and flight control.

5
Background
  • All these data point out that cache data must be
    protected. ECC is the best way to protect SRAM.
  • This work addresses some of the problems related
    to applying ECC for caches that need to operate
    at low latency like the L1 caches.

6
Motivation
  • ECC overhead 10
  • Increase in area due to circuitry 11 (approx.
    15mm2)
  • Increase in latency 10 (approx 5 ns)
  • Applications show temporal locality in accessing
    cache lines. By dynamically turning ECC on and
    off for cache lines, latency of cache access gets
    reduced. Since the frequency of operations is
    going to be high, the time between individual
    accesses is going to be less.

7
Motivation
  • Chance of error affecting data is less
  • Due to frequency of operations
  • Cache lines with high temporal locality is less
    compared to total number of cache lines.

8
Benchmarks
9
Benchmarks
10
Benchmarks
11
Self-Tuning Implementation
  • Keep track of cache line access. After every 5000
    cycles, tune the ECC of cache lines to turn on or
    off.
  • Overhead
  • Keeping track of cache line access Simple, fast
    counters make implementation easy.
  • Tuning ECC for lines Simple average computation
    and turning ECC on for lines with more activity
    than the average.

12
Implementation
  • Implementation simplified if
  • Counters maintained for a set of cache lines.
  • ECC tuning done at this granularity.
  • Granularity can be at 10, 20 100 lines.

13
Self-tuning Results
  • From the graphs we see the temporal locality.
    Based on these results, ECC was turned off for
    the lines with high locality.

BENCHMARK RELATIVE ACCESS FREQUENCY OVERHEAD
WUPWISE 8.3 0.5
VPR-ROUTE 5.9 2.5
PARSER 11.9 2.7
PERLBMK 6.3 2.5
GCC 2.7 1.9
GZIP 4.7 3.2
14
Conclusion
  • ECC is indispensable as chip reliability reduces
    and maintaining correct data becomes an issue.
  • Processor-Memory bottleneck is an eternal issue.
    Increasing cache latency through ECC protection
    creates further problems.
  • This work tries to reduce cache (protected by
    ECC) latency using a scheme to dynamically turn
    ECC on and off.

15
References
  • 1 S. S. Mukherjee, M. Kontz, and S. K.
    Reinhardt, Detailed Design and Evaluation of
    Redundant Multithreading Alternatives, ISCA,
    2002.
  • 2 S. S. Mukherjee, C. T. Weaver, J. Emer, S. K.
    Reinhardt, and T. Austin, A Systematic
    Methodology to Compute the Architectural
    Vulnerability Factors for a High-Performance
    Microprocessor, MICRO, December 2003.
  • 3 S. S. Mukherjee, T. Fossum, J. Emer, and S.
    K. Reinhardt, Cache Scrubbing in
    Microprocessors Myth or Necessity? 10th
    International Symposium on Pacific Rim Dependable
    Computing (PRDC), Papeete, Tahiti, March 2004.
  • 4 J.F.Ziegler, Terrestrial cosmic rays, IBM
    J. of Research and Development, pp. 19 39, Vol.
    40, No. 1, Jan. 1996.
  • 5 Y.Tosaka, S.Satoh, K.Suzuki, T.Suguii,
    H.Ehara, G.A.Woffinden, and S.A.Wender, Impact
    of Cosmic Ray Neutron Induced Soft Errors, on
    Advanced Submicron CMOS circuits, VLSI Symposium
    on VLSI Technology Digest of Technical Papers,
    1996.

16
References
  • 6 T.Karnik, B.Bloechel, K.Soumyanath, V.De, and
    S.Borkar, Scaling trends of Cosmic Rays induced
    Soft Errors in static latches beyond 0.18µ ,
    Symposium on VLSI Circuits Digest of Technical
    Papers, 2001.
  • 7 S.Hareland, J. Maiz, M.Alavi, K.Mistry,
    S.Walstra, and C.Dai, Impact of CMOS Scaling and
    SOI on soft error rates of logic processes,
    Symposium on VLSI Technology Digest of Technical
    Papers, 2001.
  • 8Robert Baumann, Soft Errors in Commercial
    Semiconductor Technology Overview and Scaling
    Trends, IEEE 2002 Reliability Physics Tutorial
    Notes, Reliability Fundamentals, pp. 121_01.1
    121_01.14, April 7, 2002.
  • 9 P.Shivakumar, M.Kistler, S.W.Keckler,
    D.Burger, and L.Alvisi, Modeling the Effect of
    Technology Trends on the Soft Error Rate of
    Combinatorial Logic, Dependable Systems and
    Networks, 2002.
  • 10 H. L. Kalter et al., A 50-ns 16-Mb DRAM
    with a 10 ns data rate and on-chip ECC, IEEE J.
    Solid-State Circuits, vol. 25, pp. 11181128,
    Oct. 1990.
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