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Thermodynamics of Ionic Crystal Formation

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Used to determine electron affinity when all other reactions experimentally known ... Mg and Silicate layers differ in size leading to curling fibrous structure ... – PowerPoint PPT presentation

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Title: Thermodynamics of Ionic Crystal Formation


1
Ch 7 Lecture 2 Solid State Bonding and
Applications
  • Thermodynamics of Ionic Crystal Formation
  • The Born-Haber Cycle series of elementary steps
    leading to an overall reaction
  • Used to determine electron affinity when all
    other reactions experimentally known
  • Today, we can measure EAs easily, so Cycle is
    used to find Lattice Enthalpies
  • Sample Cycle
  • Li(s) ? Li(g) DHsub 161 kJ/mol
  • ½ F2(g) ? F(g) DHdis 79 kJ/mol
  • Li(g) ? Li(g) e- DHion 531 kJ/mol
  • F(g) e- ? F-(g) DHioin -328 kJ/mol
  • Li(g) F-(g) ? LiF(s) DHxtal -1239 kJ/mol
  • Li(s) ½ F2(g) ? LiF(s) DHform -769
    kJ/mol
  • The Madelung Constant
  • Calculating Lattice Enthalpy appears
    straightforward calculate attractions

e 1.602 x 10-23 C 4peo 1.11 x 10-10 C2N-1m-2
2.307 x 10-28 J m
2
  • Problem Long-range interactions change the
    Lattice Enthalpy
  • NaCl Na has 6 Cl- nearest neighbors at ro ½ a
    (accounted for in equation)
  • Na also has 12 Na neighbors at r 0.707 a (not
    accounted for)
  • Na also has many other Na and Cl- neighbors at
    longer distances
  • M Madelung Constant takes into account all
    attractions
  • Born-Mayer Equation incorporates Madelung
    Constant as well as accounting for repulsions
    (much more complicated than attractions)
  • r constant 30 pm works well
  • Increase in charge causes corresponding increase
    in Lattice Enthalpy
  • 2/2 charges would give 4 x Lattice Enthalpy

3
  • Solubility, Size, and HSAB
  • We can use a Born-Haber Cycle to calculate
    dissolution energies
  • AgCl(s) ? Ag(g) Cl-(g) DHLattEnth 917
    kJ/mol
  • Ag(g) H2O ? Ag(aq) DHsolvation -475
    kJ/mol
  • Cl-(g) H2O ? Cl-(aq) DHsolvation -369
    kJ/mol
  • AgCl(s) H2O ? Ag(aq)
    Cl-(aq) DHdissolution 73 kJ/mol
  • Factors effecting solubility
  • Size
  • Small ions have strong attractions larger ions
    have small attractions
  • Large ions may have more water molecules
    surrounding them
  • Large/Large and Small/Small salts are less
    soluble than Large/Small
  • LiF CsI lt LiI CsF 1. Lattice Energy 2.
    HSAB

4
  • Molecular Obitals and Band Structure
  • Band Formation
  • Overlap of 2 AOs gives 2 MOs
  • Overlap of n AOs gives n MOs
  • Solids have very large values of n, sometimes
    multiples of N
  • Band many closely spaced MOs of nearly
    continuous energy
  • Valence Band highest occupied band (HOMO)
  • Conduction Band next highest empty band (LUMO)
  • Insulator large energy gap between Valence and
    Conduction bands
  • Electrons cant move through material
  • Electron motion is what allows conduction of
    electricity and heat
  • Conductor partly filled Valence and Conduction
    bands (Most Metals)
  • Little energy required for electron movement

holes
Insulator Conductor w/ no
Voltage Conductor with applied Voltage
5
  • Density of State concentration of E levels in a
    Band N(E)
  • Temperature Effect on Conductors (Metals)
  • Vibrations increase as temperature increases
  • Vibrations interfere with electron movement, slow
    conductance (increase resistance)
  • Semiconductors full Valence Band, Empty
    Conductance Band, close together
  • Energy gap lt 2 eV
  • Si, Ge are common pure substances that are
    semiconductors
  • At low temperature they are insulators (not as
    good as true insulators)
  • At higher temperature they are conducturs (not as
    good as true conductors)
  • Opposite temperature effects as metals (true
    conductors)

6
  • Doped Semiconductors
  • We can closely control on/off properties of
    semiconductors this has led to the entire field
    of solid state electronics (computers)
  • Intrinsic Semiconductor pure form is
    semiconductor (Si, Ge)
  • Doped Semiconductor small amount of impurity
    effects semiconduction
  • n-type semiconductor dopant has more e- than
    host (P in Si)
  • p-type semiconductor dopant has less e- that
    host (Al in Si)
  • Careful doping results in tailored materials
  • Fermi Level EF Energy at which e- equally
    likely to be in either band
  • Intrinsic EF about in middle of gap
  • n-type EF raised above new band
  • p-type EF lowered below new band

n-type semiconductor p-type semiconductor
7
  • Devices Using Semiconductors
  • p-n Junction
  • Diode device where current flows only in one
    direction
  • At equilibrium a few e- have moved from n-type to
    p-type (n is , p is -)
  • EF is at same level in n-type and p-type at
    equilibrium
  • Apply negative pot. to n-type and positive pot.
    to p-type
  • Forward Bias
  • Extra electrons allow e- in n-type to flow to
    p-type holes
  • Holes move to junction from p-type side
  • Current flows readily
  • Reverse Bias holes and electrons move away from
    juction no current flows

????
????
8
  • Photovoltaic Cells
  • A p-n Junction with the energy gap hn of a
    light source
  • Light causes e- to jump to p-type even under
    reverse bias conditions
  • Light detector Calculator battery
  • LED Light Emitting Diode
  • A p-n Junction with forward bias
  • Electrons move from n to p and release energy in
    the form of light
  • Lower temp increases efficiency by decreasing
    vibrations
  • 4) Laser Light Amplification by Stimulated
    Emission of Radiation
  • LED with large band gap in p-type to prevent e-
    from escaping middle band

9
  • Superconductivity
  • The Phenomenon
  • The conductivity of some metals changes abruptly
  • around 10 K (Critical Temperature TC)
  • 2) Superconductor no resistance to e- flow
  • Kammerling and Onnes 1911 discover
  • for Hg cooled by liquid He
  • Major use today is superconducting magnets for
    NMR
  • Low Temperature Alloys
  • Type I Superconductors are often Nb-Ti alloys
  • Abrupt change between superconducting and normal
    conduction
  • Meissner Effect no magnetic flux can enter
    superconductor below TC
  • Floating Magnets demonstration
  • Strong magnetic fields destroy superconduction
    above HC
  • Nb3Ge has highest TC 23.3 K for this type of
    superconductor
  • Type II Superconductors work below TC1 and are
    complex between TC1 and TC2
  • Some magnetic flux can enter them in complex
    region (Floating Magnets)

10
  • Theory Cooper Pairs
  • 1950s Bardeen, Cooper, and Schrieffer propose
    BCS Theory
  • Electrons travel through superconductors in pairs
    (Cooper Pairs)
  • Opposite spin electrons are slightly attracted at
    low temperatures
  • As one e- moves past nucleus in metal, the next
    nucleus attracts it
  • This increases the charge density, so the second
    e- of the pair is attracted to
  • Cooper pairs move through metal like a wave
  • Lattice helps push/pull e- through no resistance
    because energetically favorable
  • When T gt TC the thermal motion of the nuclei
    disrupt the wave
  • High Temperature Superconductors
  • (La2-xSrX)CuO4 found to have TC 30 K in 1986
  • YBa2Cu3O7 found to have TC 92 K in 1987
  • Type II superconductors
  • Cool with N2(l) cheap, bp 77K instead of
    He(l) expensive, bp 3K
  • Ceramic brittle cant easily make into wire,
    etc
  • Structure copper oxide planes and chains
  • Theory BCS Theory applies, but not completely
    understood

11
  • Bonding in Ionic Crystals
  • Simplest Idea hard spheres with only
    electrostatic interactions
  • Deviations form Simple Idea
  • Ionic size is difficult to measure
  • Pauling Li 60 pm (from calculations)
  • Shannon Li 90 pm (from crystal structures)
  • Sharing of electrons back from anion effects the
    size of the cation
  • Covalent Interactions very important as well ZnS
    is strongly covalent
  • Complex theory involving MOs Crystal Field
    Theory (Chapter 10)
  • Imperfections in Solids
  • Crystal Growth
  • Slowly grown crystals are more perfect
  • Quickly grown crystals are usually made up of
    many small crystals which have run into each
    other grain boundaries
  • Even perfect crystals have impurities and
    vacancies
  • Vacancies and Self-Interstitials
  • Vacancy missing atom, ion, or molecule in the
    crystal simplest imperfection
  • More formed at higher T, but only 1/10,000 even
    near the melting point
  • Effect is small localized in one unit cell
    and/or layer of the crystal

12
  • Self-Interstitials atoms/ions/molecules in the
    wrong place
  • Effect is felt for several layers of the crystal
  • Usually much rarer than vacancies
  • Substitutions one element/ion in place of the
    expected element/ion
  • Common occurrence leading to a Solid Solution
  • Ni/Cu similar in size and electronegativity both
    have (fcc) structure
  • Mixtures stable in any proportion alloy
  • Random arrangement of atoms since they are so
    similar
  • Small atoms in holes between larger ones
  • Occupying a hole usually has small effect on the
    rest of the structure
  • May have large effect on properties of the
    material (C in Fe makes steel)
  • If impurity is large than hole lattice strain or
    new solid phase
  • Dislocations
  • Atoms in one layer dont match up with the next
  • Distances and angles effected for several layers
    in each direction
  • Screw Dislocation one layer shifted a fraction
    of unit cell
  • Rapid growth location (more attraction into
    solution) helical result

13
  • The Silicates
  • Abundance
  • O, Si 80 of Earths Crust
  • Many compounds and minerals formed, some
    industrially important
  • Silica SiO2
  • Three crystalline forms Quartz (low T form),
    Tidymite, and Cristobalite
  • Molten SiO2 often forms glasses instead of
    crystalline forms
  • Glass disordered solid structure
  • Actually a solution that continues to flow but
    very slowly
  • SiO4 tetrahedra in all crystal forms with SiOSi
    angle 143.6o
  • Quartz
  • Most common form
  • Helical chains of SiO4 tetrahedra make it chiral
  • Each full turn of the helix has 3 Si and 3 O
    atoms
  • Six helices combine to give a hexagonal structure

14
  • Other Silicates also have SiO4 units in chains,
    sheets, rings, arrays, etc
  • Al3 can substitute for Si4 Aluminosilicates
  • Other cations needed to balance charge
  • Al3, Mg2, Fe2, Ti3 common cations occupy
    holes
  • Kaolinite Al2(OH)2Si4O10
  • Talc 3 Mg substitute for 2 Al Mg3 (OH)2Si4O10

15
  • Mica
  • Layers of K ions between silicate and aluminate
    layers
  • Al in about 25 of the Si positions
  • Can be cleaved into incredibly smooth, flat
    sheets
  • Used in nail polish
  • Asbestos fibrous mineral
  • Chrysotile Mg3(OH)4Si2O5
  • Mg and Silicate layers differ in size leading to
    curling fibrous structure
  • Zeolites mixed aluminosilicates with
  • (Si,Al)nO2n frameworks and cations added to
    balance the charge
  • Used as water softeners before polymer resins
    developed (Cation exchange)
  • Cavities large enough for molecules to enter may
    make stable complex
  • Water removal from organic solvent Molecular
    Sieves
  • Cat litter and oil absorbant
  • Catalysts and catalyst support for petroleum
    cracking
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