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Title: Ion Beam Applications


1
Ion Beam Applications
RCA Workshop on Partnership Promotion and
Sustainable Development
July 7-9, 2009, Jeju Kye-Ryung Kim B. H. Choi,
Y. S. Cho, J. Y. Kim, J. W. Park, K. Y. Kim, J.
S. Lee
Proton Engineering Frontier Project (PEFP) Korea
Atomic Energy Research Institute (www.komac.re.kr)
2
Contents
  • Accelerators in Korea
  • Status of Beam utilization and Application
  • Examples of Beam Utilization Carried by PEFP
  • Summary

3
Contents
  • Accelerators in Korea
  • Status of Beam utilization and Application
  • Examples of Beam Utilization Carried by PEFP
  • Summary

4
Accelerators in Korea (Excluding electron
accelerators Industrys)
13MeV Cyclotron / KIRAMS (KIRAMS)
  • PLS (Pohang Light Source)
  • at PAL (Pohang Accelerator Lab.)
  • Proton accelerator under development
  • by PEFP (Proton Engineering Frontier Project)
  • 230MeV cyclotron for proton therapy operated
  • by NCC (National Cancer Center)
  • 30MeV and 50MeV cyclotron for RI production and
    RD
  • operated by KIRAMS (Korea Institute of
    Radiological
  • and Medical Sciences)
  • Tandem Accelerators at KIGAM and SNU for AMS
  • Ion Implanters at KAERI and KIGAM for material
    sciences

30MeV Cyclotron / IBA in Belgium (KIRAMS)
MC-50 Cyclotron / Scanditronix in Sweden (KIRAMS)
  • 3MV Tandem Accelerator
  • / HVEC in Netherlands
  • (SNU)
  • - Beam C,H
  • - Energy 0.3 6 MeV
  • - Beam Current 5 µA
  • 1.75MV Tandem Accelerator
  • / NEC in USA
  • (KIGAM)
  • - Beam H, C
  • - Energy 0.5 3 MeV
  • - Beam Current 1µA

230MeV Cyclotron / IBA in Belgium (NCC)
Proton Accelerator / PEFP (PEFP)
5
Ion Beam Facilities Developed by KAERI/PEFP
  • Ion Beam Sputtering System
  • Developed in 2003
  • Energy/Current 0.530keV/10mA
  • Ions Xe, Ar, He, etc.
  • Irradiation Area 30cm in diameter
  • Stage tiling and cooling are available.
  • High Current Gaseous Ion Implanter
  • Developed in 1989
  • Energy/Current 20150keV/10mA
  • Ions H, D, He, N, Ar, Xe, Kr, etc.
  • Irradiation Area 18cm in diameter
  • with uniformity above 95
  • Application Fields
  • Improvement of anti-abrasion, hardness of
    material
  • Antistatic, hydrophilic/hydrophobic polymer
    development, etc.
  • High Current Ion Implanter for Semi.
  • Developed in 1994
  • Energy/Current 20120keV/10mA
  • Ions B, BF2, As, P, H, N, Ar, Metalic,
  • Gaseous ions, etc.
  • Irradiation Area 4 in diameter
  • Application Fields Semi. Wafer,
  • High Dose Exp., etc.
  • Metal Ion Beam Irradiator
  • Developed in 1994
  • Energy/Current 2090keV/1mA
  • Ions Co, Fe, Cr, Ag, Y, Zr, Metalic,
  • Gaseous ion, etc.
  • Irradiation Area 10cm in diamater
  • with uniformity above 95
  • Application fields Semi. Wafers,
  • High Dose Exp., etc.
  • Mass Separation is available
  • Surface Modification System
  • Developed in 2003
  • Energy/Current 2070keV/10mA
  • Ions N, Ar, etc.
  • Irradiation Area 35cm in diameter
  • Technology transfer
  • to industrial company
  • 1MV/1mA Tandem Accelerator
  • Energy/Current
  • 0.31.8MeV/1mA
  • Application Fields Development
  • of SOI wafer and Power Semi.
  • Device, High Flux Exp., etc.

6
Project Goals of PEFP
  • Project Name Proton Engineering Frontier
    Project (PEFP)
  • 21C Frontier Project, Ministry
    of Education, Science and Technology
  • Project Goals
  • 1st Developing constructing a proton
    linear accelerator (100MeV, 20mA)
  • 2nd Developing technologies for the proton
    beam utilizations
  • accelerator applications
  • 3rd Promoting industrial applications with
    the developed technologies
  • Project Period 2002.7 2012.3 (10 years)
  • Project Cost 128.6 B Won (Gov. 115.7 B,
    Private 12.9 B)
  • (Gyoungju City provides the land, buildings
    supporting facilities)

7
PEFP Accelerator and Beam Lines
RI
Semiconductor
Neutron
Nuclear Physics Space Tech.
Material Energy Environ- ment
Medical LEPT
Biology Medical
Material Fuel Cell Nano Particle
Basic Sciences
Accelerator Parameters
  • Particle Proton
  • Max Beam Energy 100 MeV
  • Operational Mode Pulse
  • Max. Peak Current 20 mA
  • RF Frequency 350 MHz
  • Max Repetition Rate 120 Hz / 60 Hz
  • Max Pulse Length 2 ms / 1.33 ms
  • Max Beam Duty 24 / 8

Specific Features of the PEFP Accelerator
  • 50 keV Injector, 3 MeV RFQ and 20 100 MeV
    DTLs.
  • Beam extractions at either 20 or 100 MeV
  • Beam distribution to 3 beam lines at 20 MeV and 3
    beam lines at 100 MeV sequentially by
    programmable ACM
  • Each beam line has specific beam parameters

8
Status of PEFP 20-MeV Linac
Target station for user
Beam Profile
  • RFQ DTL fabricated and tuned
  • Full Power RF test completed
  • Beam test results
  • (20 MeV, 20 mA peak at 50 us, 0.1 Hz)
  • Beam test is underway to increase
  • the beam current

3 MeV RFQ 350 MHz 4-Vane
20 MeV DTL 4 -Tank 150-DT
8
9
Ion Implanter Development
  • 300 keV Ion Implanter Development
    Industrialization

- Installed at the Advanced Radiation Technology
Institute - Main Application Fields Surface
modification of polymer, Development of optical
materials, High energy ion implantation
technology development, etc.
  • Cost Comparison with other company
  • less than 1/3

Price
Current
Energy
Manufacturer
4M
2mA
260kV
Varian Korea
???
4M
600kV
EATON
1mA
290M
5mA
300kV
ULVAC
3MEURO
10mA
200kV
DANFISIK
1BWON
5mA
300kV
PEFP
  • Specifications
  • - Beam Energy 50300keV
  • - Beam Current 5mA at the target
  • (Nitrogen ion standard)
  • - Irradiation Area 150cm X 150cm
  • - Size 6.52m X 2.6m

10
Ion Implanter Development
Accelerator Tube
MQD
Electrostatic scanner
Slit
Analyzing magnet
Transformer
Faraday Cup
High Voltage P/S
High Voltage Terminal
Ion Source Chamber
Einzel lens
Ion Source
Target Chamber
Transformer
11
Ion Species Available to Use
12
Contents
  • Accelerators in Korea
  • Status of Beam utilization and Application
  • Examples of Beam Utilization Carried by PEFP
  • Summary

13
Utilization Application Fields with Proton
Beam
  • Industrial applications ion-cut,
  • power semiconductor devices
  • Medical applications BNCT, RI
  • production, neutron proton therapy
  • Biological applications mutation
  • studies of plants and micro-
  • organisms, micro-beam system
  • Space applications radiation tests of
  • space components and radiation
  • effects
  • Defense applications mine
  • detection, proton neutron
  • radiography
  • Intense neutron source radiation

Mine Detection
BNCT
Intense Neutron Source
ADS
Ion-Cut (SOI Wafer)
Average Beam Current
Spallation Neutron Source / Muon Source
RNB
RI Production
Power Semi. Device
Neutron Therpy
MW
W
Proton Radiography
High Energy Physics
Micro-beam system
Biological Application
Proton Therapy
Nuclear Physics
Space Applications
100 MeV
Proton Energy
PEFP Area
Extension Area
14
Utilization Application Fields with Ion Beam
  • Large Potential of Industrial Application
  • - Ion Beam Energy
  • 10200keV
  • - Beam Current
  • 110 mA
  • Low Current for Beam Analysis uA
  • Surface Modification
  • Hydrophilic, Milling,
  • Bio compatibility,
  • UV Protection,
  • Hardness,
  • Wearability, etc.

15
Case Study of Ion Beam Utilization (2000-2008)
16
Case Study of Ion Beam Utilization (2000-2008)
17
Case Study of Ion Beam Utilization (2000-2008)
18
Trend Study of Ion Beam Application
  • Papers published on the Science Direct

- Processes using the inert gas and reactive gas
are increased.
- Ion implantation processes still command an
absolute majority. - Papers from mixed processes
are slightly increased.
PSII Plasma Source Ion Implantation IBAD
Ion Beam Assisted Deposition IBM Ion Beam
Mixing
19
Paper Publication
Japan (882, 41.1)
China (646, 30.1)
Australia (120, 5.6)
India (167, 7.8)
Taiwan (93, 4.3)
Korea (158, 7.4)
Pakistan (2, 0.1)
Thailand (27, 1.3)
Totally 2,148 papers were published during last
nine years. (Science Direct)
Vietnam (2, 0.1)
Malaysia (5, 0.2)
20
Worldwide Ion Implanters for RD
21
Application Fields of Ion Implantation
  • 2008 Takasaki Symposium
  • (2007 TIARA/JAEA User Program)

H, 18
C60, 14
Others (He, B, Mg, Ar, K, Ti, V, Cr, Fe, Co,
Ni, Cu, Ag, Tb, Pt), 20
Bi, 5
Eu, 6
Application Fields Distribution
Xe, 4
ST (3)
ET (3)
IT (5)
N, 8
Energy (5)
NT (29)
P, 9
Al, 3
Medical (15)
Si, 13
Ion Beam Species Distribution (400kV Ion
Implanter)
Analysis / Irradiation Tech. Development (18)
BT (22)
TIARA (Takasaki Advanced Radiation Research
Institute)
22
Contents
  • Accelerators in Korea
  • Status of Beam utilization and Application
  • Examples of Beam Utilization Carried by PEFP
  • Summary

23
Gemstone Coloring and Decoloration
  • Color diamond by ion beam irradiation
  • Being producing black diamonds commercially
  • Preparing technology transfer of sapphire
    coloring

2MeV proton implantation of Diamond
Ion implantation (70 keV, 1x 1017 ions/cm2
) Annealing in vacuum (600?, 2hr
Black diamond by using nitrogen ion beam
Diamond
Coloring of Sapphire
0.115 ct
0.052 ct
Co
Fe
70100keV
Ruby decoloration
Cr
24
UV Protection Polymer Development
  • The UV protection ratio of nitrogen ion
    implanted PC is above 95 in UV-A area at 50keV,
    7E16 ions/cm2

UV Protection films treated by ion beam
Sun-Cap
Container for Cosmetics
25
Lifetime Enhancement of Hair Clipper Blade
  • The lifetime is increased up to 3 times longer
    than non irradiated clippers.
  • PEFP developed the mass production process and
    equipment. Its maximum production capability is
    10,000ea/month.
  • The technology was transferred to Hasung e-sis
    successfully at the end of 2004.
  • PEFP has performed the training of personnel in
    Hasung e-sis about ion implantation technology
    for commercial operation

Accelerating tube
Vacuum chamber
MFC and Power Supplies
Ion source
Jigs (inside chamber)
Vacuum and Jig Control device
X-ray shield device
  • - 50kV and 20mA ion source and 50kV accelerator
    tube
  • Uniform irradiation ( within 5 deviation) in
    the area of 300mm in dia.

Hair Clipper
26
Electric Conductive Polymer
???? ? ??? ??? ??? ?? ??
  • Development of Mass Production Technology of the
    Electric Conductive IC's Tray with an Ion Beam
    Irradiation System
  • Reduce electrical resistivity on the surface of
    the Tray for antistatic
  • Unique characteristics
  • 1) inexpensive
  • 2) surface hardening
  • 3) no impurity into the IC
  • 4) reproducible
  • Transferring technology mass production
    facilities to Korea Placo Co.

Change of surface resistivity as a function of
ion doses at 50 keV

Before Irradiation (1018 Ohm/cm2)
After Irradiation (107 Ohm/cm2)
Mass production facility
27
Enhancement of Wearability
  • Enhancement of wear resistance of gear for
    grinding machine for vegetable juice

Polyacetal
ss303
Jang type clean gear
- Nitrogen ion implantation 70keV, 1X1017
ions/cm2
28
IBAD (Ion Beam Assisted Deposition)
Proton Accelerator
Ion Source
IBAD II Ion Implantation Simultaneous
Sputtering or Vapor Deposition
  • Increased adhesion.
  •  Improved hardness and scratch-resistance.
  •  Better uniformity.

- Development of Ion Source Ion Beam Process
for IBAD Process - Design manufacture of Ion
source (15keV,10mA) - Enhancing the lifetime of
Glass lens mold die (above 4 times) -
Transferring technology equipment to Samsung
Electronics Co., Ltd. in 2002
IBAD equipment (in Samsung Electronics Co.,
Ltd.)
29
IBM (Ion Beam Mixing) Technology
Coating layer
Material
Ion beam Mixing interface
Apparatus for IBM
Coating layer
Mixed layer
Material
1.0 µm
1.0 µm
Concept of IBM Technology
w/o ion beam bombardment
w/ ion beam bombardment
30
Industrial Applications of PEFP
31
International Collaboration Networking
Domestic Collaboration Establishment of beam
utilization Experimental facilities and
execution of experiment
Experimental facilities for BT/ST ( MC-50
cyclotron)
Projects using Proton beam
20MeV Proton Linac (PEFP, 1MV Tandem)
Low energy Ion beam faciliities (PEFP, Implanters)
PEFP
User program
1.75MV tandem accelerator (KIGAM)
Technology survey and completed research
International Collaboration Exchange of RD
information
RAL, EBIS (England)
RIKEN, TIARA Tohoku Univ. RCNP, J-Parc (Japan)
IUCF, UC-Davis SNS (USA)
PSI (Swiss) IHEP (China)
RIKEN Rikagaku Kenkyusho TIARA Takasaki
Advanced Radiation Research Institute PSI Paul
Scherrer Institute RAL Rutherford Applenton
Laboratory IHEP Institute of High Energy
Physics
32
Contents
  • Accelerators in Korea
  • Status of Beam utilization and Application
  • Examples of Beam Utilization
  • Summary

33
Summary
  • PEFP has
  • - 20MeV (100MeV) Proton Linear Accelerators
  • - Several Low Energy Ion Implanters
  • - Network for the Utilization of the
    Accelerators in Korea
  • - Technology for Accelerator Development
  • - Ion Beam and Proton Beam Utilization
    Technology
  • in the Various Application Fields
  • - Experiences of Industrialization Collaborating
    with Companies
  • We can collaborate in the fields of
  • - Utilization of Ion Implanter and Proton
    Accelerator
  • - Ion Beam and Proton Beam Utilization
    Technology Development
  • - Industrialization of Ion Beam Technologies
  • Ripple Effects can be expected
  • - Promotion of the RD for the Ion Beam and
    Proton Beam Utilization
  • - Encouraging the Scientists of Fusion
    Technology Development
  • - Education of the Graduate Students and Young
    Scientists

34
Summary
  • Our Facilities are
  • - Fully opened to the users from foreign
    countries as well as domestic users
  • - Can be accessed for the internationally
    collaborated RD of ion beam irradiation and beam
    utilization technology developments
  • Accelerator itself and technologies related to
    the accelerator development can be provided by
    the PEFP.

35
Thank You for Your Attention
Kye-Ryung Kim (Ph. D., Leader of Beam Utilization
RD Team) - E-mail kimkr_at_kaeri.re.kr - Tel.
82-42-868-8602
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