The Effects of Extreme Ambient Temperature on Operation of Commercial-Off-the-Shelf Silicon-Germanium, Silicon-on-Insulator, and Mixed Signal Semiconductor Devices

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The Effects of Extreme Ambient Temperature on
Operation of Commercial-Off-the-Shelf
Silicon-Germanium, Silicon-on-Insulator, and
Mixed Signal Semiconductor Devices

• Richard L. Patterson
• NASA Glenn Research Center
• Ahmad Hammoud
• ASRC Aerospace Corporation
• NASA Glenn Research Center
• New Electronic Technologies and Insertion
• Into Flight Programs Workshop
• January 30 - February 1, 2007

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NASA GRC Extreme Temperature Electronics
Temperature Data for Planetary Missions
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NASA GRC Extreme Temperature Electronics
Planet Temperature Data
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NASA GRC Extreme Temperature Electronics
Earths Moon
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NASA GRC Extreme Temperature Electronics
NEPP Supported Task 07-0281 Requirements and
Benefits of Low Temperature Electronics
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NASA GRC Extreme Temperature Electronics
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NASA GRC Extreme Temperature Electronics

• SiGe Hetero-junction Bipolar Power Transistor,
  HBT (GPD HBT-16-25)

25 ?C
-195 ?C
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NASA GRC Extreme Temperature Electronics
SiGe Hetero-junction Bipolar Power Transistor,
HBT (GPD HBT-16-25)
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NASA GRC Extreme Temperature Electronics
Effects of thermal cycling (12 Cycles -195 ?C to
85 ?C) SiGe Hetero-junction Bipolar Power
Transistor, HBT (GPD HBT-16-25)
Pre-cycling at -195 ?C
Post-cycling at -195 ?C
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Oscillator Frequency vs Tuning Voltage of a
SiGe Voltage-Controlled Oscillator (MAXIM 2622
VCO)
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SiGe Hetero-junction Bipolar Power Transistor,
HBT (Northrop Grumman ET12F0001AM)
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NASA GRC Extreme Temperature Electronics
SiGe Power Diode (GPD SG-21-41) Effects of
thermal cycling (12 Cycles -195 ?C to 85 ?C)
Post-cycling
Pre-cycling
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SiGe Radio Frequency Amplifier (Texas Instruments
THS4302)
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NASA GRC Extreme Temperature Electronics
SiGe Radio Frequency Amplifier (Maxim 2644)
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Results for Two SiGe Radio Frequency Amplifiers
Texas Instruments THS4302

• Device functioned with temperature down to 35 K
• Bias was adjusted to maximize gain at midband
• Successful cold-restart at 35 K after 7 min.
  power off

MAXIM 2644 Evaluation Kit

• Device functioned with temperature down to 60 K
• Gain dropped off significantly below 60 K (Bias
  may need to be adjusted)
• Successful cold-restart at 60 K after 7 min.
  power off

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NASA GRC Extreme Temperature Electronics
Test Setup for SiGe RF Amplifier Testing
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Trigger
Waveforms at Various Temperatures of an SOI 555
Timer (Cissoid CHT-555) ftrigger 25 kHz
Output
Threshold
20 ?C
100 ?C
-195 ?C
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NASA GRC Extreme Temperature Electronics
FOUT
Output Waveforms of an SOI Crystal Clock
Generator At Various Temperatures _at_ 1
MHz (Honeywell HTCCG)
FOUT/2
FOUT/4
FOUT/8
20 ?C
100 ?C
-195 ?C
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Gain Phase of an SOI Operational
Amplifier Analog Devices AD8065 Data taken
after 10 cycles between -195 ?C 90 ?C
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Output Voltage of an SOI CMOS Voltage
Reference Vs Temperature Under No-Load (Cissoid
CHT-BG-050)
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NASA GRC Extreme Temperature Electronics
Load Regulation of an SOI CMOS Voltage
Reference At Various Temperatures (Cissoid
CHT-BG-050)
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ID vs VDS Curves of an SOI N-Channel Power FET
at Three Temperatures (Honeywell HTNFET)
at 25 ?C
at -195 ?C
at 100 ?C
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Drain-Source Resistance (at ID0.1A, VGS4V) of
an SOI N-Channel Power FET vs Temperature (Honeywe
ll HTNFET)
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NASA GRC Extreme Temperature Electronics