Submicrometer Ferromagnetic NOT Gate and Shift Register - PowerPoint PPT Presentation

1 / 13
About This Presentation
Title:

Submicrometer Ferromagnetic NOT Gate and Shift Register

Description:

Due to shape anisotropy magnetization in nanowires lies along the wire axis. Where two opposite magnetizations meet a domain wall is formed ... – PowerPoint PPT presentation

Number of Views:130
Avg rating:3.0/5.0
Slides: 14
Provided by: michaelte
Category:

less

Transcript and Presenter's Notes

Title: Submicrometer Ferromagnetic NOT Gate and Shift Register


1
Submicrometer Ferromagnetic NOT Gate and Shift
Register
  • D.A. Allwood, Gang Xiong, M.D. Cooke, C.C.
    Faulkner, D. Atkinson, N. Vernier, R.P Cowburn
  • Science, Vol. 296 Issue 5575 14 June 2002

2
Domain Wall Review
  • Due to shape anisotropy magnetization in
    nanowires lies along the wire axis
  • Where two opposite magnetizations meet a domain
    wall is formed
  • Application of a magnetic field parallel to the
    wire can cause motion of the domain wall (T. Ono,
    et al., Science 284, 468 1999)

H
3
Domain Wall Motion
? Can we propagate around corners ?
? We can use a circularly polarized magnetic
field
4
Schematic of NOT Gate
? Boolean logic states can be defined by whether
or not magnetization arrows point towards or
away from each other
5
NOT Gate Fabrication
? Structures consist of 5nm thick Permalloy
films thermally evaporated on silicon
? Focused ion beam milling was used to
create nanowire junction
? Radius of curvature of bend is 1um
? Wire size is 200nm thick
6
Measurement of Device
? Magneto-optical Kerr effect was used to
measure the performance of the device
? Input signal of trace I is opposite that
of the output signal in trace II with a
slight delay
? Therefore device works as a NOT Gate
? 1.5 field cycles corresponds to change
magnetization
? ½ cycle for the NOT junction and 1 cycle
for the feedback loop
7
Three NOT Junction Device
? From the same measurement point two
different MOKE traces were obtained
? In trace I the gates were initialized by a
150 Oe magnetic pulse followed by a
sinusoidal field of reducing magnitude to
remove adjacent domain walls
? Trace I behaves very much like that of the
1 junction NOT gate because only one domain
wall is present
? In trace II the second demagnetizing field
was not applied
? Consequently, three domain wall are present
so we see six transitions per magnetization
cycle
8
Shift Register
? Fully functional logic architecture must
be capable of processing data in two
direction
? By reflecting the junction along the
horizontal axis the chirality of the gate is
switched allowing data transfer in two
directions
? Structure has 11 NOT Gates, 6 shift data
in one direction and 5 in the other direction
? Structure switches with a period of 13
field cycles corresponding to a 13 bit shift
register (1 bit per NOT gate and 2 bits for
the feedback loop)
9
Device Performance
  • Operational frequency of devices was only
    demonstrated up to 27 Hz due to iron core magnet
    used to switch fields
  • Frequency limitations should be limited only by
    domain wall velocity
  • For domain wall mobility of 30m/s an operating
    frequency of 200 MHz should be achievable
  • In subsequent work this group has demonstrated
    domain wall velocity of 1500m/s (Nature
    Materials Vol.2 Feb 2003)
  • Further improvements can be made by reducing the
    size of the gate
  • Energy of the NOT gate is estimated to be
    1400KT per transitions so thermal issues should
    not be a problem

10
Characterization of Device
? In subsequent work it was determined that
three modes of operation exist
? Normal Operation One transition every 3/2
field cycles for one wall or two transitions
every cycle for three wall operation
? Nucleation By applying a strong magnetic
field two transitions per field cycle are
observed and no information is processed. New
domain walls are created. Equivalent to
reverse breakdown in an electronic device.
? Dephasing Reducing the field down to lower
values and domain walls can be annihilated
by other domain walls in the system
11
Modes of Operation
? Normal Mode
? Nucleation
? Three wall operation
? Dephasing
? Field Cycles
12
Nanomagnetic Logic
? Three further logic gates are required to make
a fully universal logic architecture
? A two input logic gate that performs AND, OR,
or XOR function
? A fan out structure that converts one domain
wall into two domain walls
? A structure that allows magnetic tracks to
cross over each other
? It is also necessary to read electronic
signals into and out of the logic system
? Signals can be fed into the device by a
current carrying stripline
? Data can be read out by incorporating spin
valves or spin tunnel junctions into
magnetic tracks or by measuring domain wall
resistance
13
Conclusions
  • Ferromagnetic NOT Gate and Shift Register were
    demonstrated
  • Performance limited by domain wall velocity
  • Device was determined to have three modes of
    operation
  • Future nanomagnetic logic system will need
    addition of three more logic components as well
    as have the capability of interfacing with
    electronic signals
Write a Comment
User Comments (0)
About PowerShow.com