GaN Semiconductor Devices Market 2018 with Focus on Competitive Landscape and Growth Factors

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Market Research Future
GaN Semiconductor Devices Market Research Report-
Global Forecast to 2022
Gallium Nitride (GaN) is a third band gap
semiconductor widely used in LED diodes.
Chemically, the compound is very tough and
composed of Wurtzite crystalline structure.
Additionally, GaN is the emerging substitute to
pure silicon in the semiconductor sector. The
properties of GaN are intense power efficient
compound which is capable of working with high
frequency and has the ability to emit high
brightness and intensity when used in
opto-semiconductor. However, increase in demand
for wireless devices, the rapid evolution of
automated devices and low-cost manufacturing is
expected to drive the gallium semiconductor
market over the forecast period. On the other
hand, the dust produced while manufacturing of
GaN semiconductor creates serious concern to
human health such as irritation to human eyes,
skin and lungs which eventually increases the
shielding outfit expenses used for manufacturing
purposes which are expected to hinder the growth
of GaN semiconductor market over the forecast
period. Additionally, silicon carbide (SiC)
based semiconductor is expected to be an
extensive competition for GaN semiconductor over
the forecast period between 2017-
2022. https//www.marketresearchfuture.com/report
s/gan-semiconductor-devices-market-1174
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Regional Analysis Geographically, the gallium
nitride (GaN) semiconductor devices are segmented
into five different regions namely North America,
Asia Pacific, Europe, the Middle East Africa,
and Latin America. North America is presumed to
be a prominent region in gallium nitride
semiconductor devices market. The U.S. is a
leading market owing to the rapid development in
the aerospace and rising demand for semiconductor
devices in military, offshore oil gas
exploration, and emergency medical service
providers over the forecast period. Asia Pacific
region is expected to have substantial growth in
the gallium nitride semiconductor devices market.
China, Taiwan, Republic of Korea, and Japan are
the market leaders in the gallium nitride
semiconductor devices. Europe is also anticipated
to have a significant growth rate over the
forecast period. Access Full Report _at_
https//www.marketresearchfuture.com/reports/gan-s
emiconductor-devices-market-1174
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Market Research Future

• Market Segments
• The gallium nitride (GaN) semiconductor devices
  is segmented into type, wafer size, devices and
  end user.
• Based on the type gallium nitride semiconductor
  devices is sub-segmented into Opto semiconductor,
  power semiconductor and RF semiconductors. By
  wafer size the gallium nitride semiconductor is
  further sub divided into 2 inches, 4 inches and 6
  inches and above.
• Furthermore, device based gallium nitride
  semiconductor is sub-segmented into transistor,
  diode, rectifier, power ICs, power drivers,
  supply inverter, amplifiers, lighting laser,
  and switching systems. Lastly, the gallium
  nitride semiconductor devices are sub-segmented
  into end user which include automotive, aerospace
  defense, consumer electronics,
  telecommunication, and medical.
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Major Players in this Research The key players
of gallium nitride semiconductor devices includes
Fujitsu Ltd (Japan), Panasonic Semiconductors
(Japan), Texas Instruments (U.S.),RF Micro
Devices Corporation (U.S.), Osram
Opto-semiconductors (Germany), Cree Incorporated
(U.S.), Toshiba (Japan), Aixtron SE (Germany),
Infineon Technologies (Germany), Gallia
Semiconductor (Belgium), ROHM Company Limited
(Japan), . NXP Semiconductors (U.S.), Koninklijke
Philips N.V. (Netherlands), Nichia Corporation
(Japan), and Qorvo (U.S.). Know More about this
Report _at_ https//www.marketresearchfuture.com/pres
s-release/gan-semiconductor-devices-market
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Market Research Future
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