Title: Soft Error Rates with Inertial and Logical Masking
1 Soft Error Rates with Inertial and Logical
Masking Fan Wang Vishwani D. Agrawal vagrawal_at_en
g.auburn.edu
Department of Electrical and Computer
Engineering Auburn University, AL 36849 USA
22 th IEEE International Conference on VLSI Design
Presently with Juniper Networks, Inc. Sunnyvale,
CA
2Outline
- Background
- Problem Statement
- Analysis
- Results and Discussion
- Conclusion
3Motivation for This Work
- With the continuous downscaling of CMOS
technologies, the device reliability has become a
major bottleneck. - The sensitivity of electronic systems can
potentially become a major cause of soft
(non-permanent) failures. - The determination of soft error rate in logic
circuits is a complex problem. It is necessary to
analyze circuit reliability. However, there is no
comprehensive work that considers all the factors
that influence the soft error rate.
4Strike Changes State of a Single Bit
0
1
Definition from NASA Thesaurus Single Event
Upset (SEU) Radiation-induced errors in
microelectronic circuits caused when charged
particles also, high energy particles (usually
from the radiation belts or from cosmic rays)
lose energy by ionizing the medium through which
they pass, leaving behind a wake of electron-hole
pairs.
5Cosmic Rays
Source Ziegler et al.
- Neutron flux is dependent on altitude,
longitude, solar activity etc.
6Problem Statement
- Given background environment data
- Neutron flux
- Background energy (LET) distribution
- These two factors are location dependent.
- Given circuit characteristics
- Technology
- Circuit netlist
- Circuit node sensitive region data
- These three factors depend on the circuit.
- Estimate neutron caused soft error rate in
standard FIT units. - Linear Energy Transfer (LET) is a measure of the
energy transferred to the device per unit length
as an ionizing particle travels through material.
Unit MeV-cm2/mg. - Failures In Time (FIT) Number of failures per
109 device hours
7Measured Environmental Data
- Typical ground-level neutron flux 56.5cm-2s-1.
- J. F. Ziegler, Terrestrial cosmic rays, IBM
Journal of Research and Development, vol. 40, no.
1, pp. 19.39, 1996. - Particle energy distribution at ground-level
- For both 0.5µm and 0.35µm CMOS technology
at ground level, the largest population has an
LET of 20 MeV-cm2/mg or less. Particles with
energy greater than 30 MeV-cm2/mg are exceedingly
rare. - K. J. Hass and J. W. Ambles, Single Event
Transients in Deep Submicron CMOS, Proc. 42nd
Midwest Symposium on Circuits and Systems, vol.
1, 1999.
Probability density
0 15 30
Linear energy transfer (LET), MeV-cm2/mg
8Proposed Soft Error Model
9Pulse Width Probability Density Propagation
fX(x)
Delay tp
fY(y)
- We use a 3-interval piecewise linear
propagation model - Non-propagation, if X tp.
- Propagation with attenuation, if tp lt X lt 2tp.
- Propagation with no attenuation, if X ? 2tp.
- Where
- X input pulse width
- Y output pulse width
- tp gate input to output delay
10Probability Transformation
- Consider random variables x and y, and
- Function, Y F(X)
- Given, P.D.F. of X is p(x)
- P.D.F. of Y p(x)dx p(y)dy p(y) p(x)/(dy/dx)
ydy y
Y F(X)
X
x xdx
11Validation Using HSPICE Simulation
- CMOS inverter in TSMC035 technology with load
capacitance 10fF
12Comparing Methods
13Experimental Results Comparison
BPTM Berkeley Predictive Technology Model
14More Result Comparison
The altitude is not mentioned for these data.
15Circuit Topology and SER
- Circuit topology influences the logic SER.
- We have analyzed two types of circuits for
different sizes, an inverter chain and a ripple
carry adder. - For inverter chain, in TSMC035 technology the
critical width is between 25ps and 50ps. - For ripple carry adder, the critical width may
not exist.
16Inverter Chain and SER
17Ripple Carry Adder and SER
18Conclusion
- SER in logic and memory chips will continue to
increase as devices become more sensitive to soft
errors at sea level. - By modeling the soft errors by two parameters,
the occurrence rate and single event transient
pulse width density, we effectively account for
the electrical masking of circuit. - Our research on critical width of SER for
different circuit topologies may provide better
insights for soft error protection schemes.
19References
- 1 R. R. Rao, K. Chopra, D. Blaauw, and D.
Sylvester, An Efficient Static Algorithm for
Computing the Soft Error Rates of Combinational
Circuits, Proc. Design Automation and Test in
Europe, pp. 164-169, 2006. - 2 R. Rajaraman, J. S. Kim, N. Vijaykrishnan,
Y. Xie, and M. J. Irwin, SEAT-LA A Soft Error
Analysis Tool for Combinational Logic," Proc.
19th International Conference on VLSI Design,
2006, pp. 499-502. - 3 G. Asadi and M. B. Tahoori, An Accurate
SER Estimation Method Based on Propagation
Probability, Proc. Design Automation and Test in
Europe Conf, 2005, pp. 306-307. - 4 M. Zhang and N. R. Shanbhag, A Soft Error
Rate Analysis (SERA) Methodology, Proc. IEEE/ACM
International Conference on Computer Aided
Design, 2004, pp. 111-118. - 5 T. Rejimon and S. Bhanja, An Accurate
Probabilistic Model for Error Detection, Proc.
18th International Conference on VLSI Design,
2005, pp. 717-722. - 6 J. Graham, Soft Errors a Problem as SRAM
Geometries Shrink, http//www.ebnews.com/story/OE
G20020128S0079, ebn, 28 Jan 2002. - 7 W. Leung, F.-C. Hsu and M. E. Jones, The
Ideal SoC Memory 1T-SRAMTM, Proc. 13th Annual
IEEE International ASIC/SOC Conference, pp.
32-36, 2000 - 8 Report, Soft Errors in Electronic
Memory-A White Paper," Technical report, Tezzaron
Semiconductor, 2004. - 9 F. Wang, Soft Error Rate Determination
for Nanometer CMOS VLSI Circuits, Masters
Thesis, Auburn University, Electrical and
Computer Engineering, May 2008.
20Thank You . . .