Magnetic Nanofluidics ME342 Design Project Update 2

1
Magnetic Nanofluidics ME342Design Project
Update 2

• Abhishek Dhanda
• Kwan-Kyu Park
• Michael Pihulic
• Katherine Tsai
• July 13, 2006

2
Progress Equipment Training

• Completed
• Kwan-Kyu Thermco1,2,poly, P-5000
• Katherine Tylan1-6, EValign, EVbond
• Mike Wafer Saw, EValign, EVbond
• Pending
• SEM, E-beam, PMMA station, Metalica, wbgeneral

3
Progress Masks

• Set 1 Microchannels (Etch1, Metal1, Back, Pyrex)
  
• H 10 um, 5 um
• W 30 um, 10 um, 5 um, zigzag
• L 475 um - 500 um
• Set 2 Nanochannels
• (Ebeam, Etch2, Metal2, Back, Pyrex)
• H 500 nm, 100 nm
• W 1 um, 500 nm, 100 nm
• L 30 um

4
Mask Set 1 Microchannels

• Revisions since 6/10/06
• Reduced die size by bending microchannels
• Increased number of devices per wafer
• Rearranged layout to facilitate wafer dicing
• Added labels to each die
• Added trenches around metal labels

5
Mask Set 1 Microchannels
6
  Process Target Recipe Estimated Setting Tool
1 Diffusion Cleaning   Std. Clean 30-40min Wbdiff
2 Oxide Growth 500nm Wet 1100 38min tylan 1,2
3 Diffusion Cleaning   Std. Clean 30-40min Wbdiff
4 Polysilicon deposition 100nm,500nm     Thermcopoly
5 E-beam Lithography 100nm 2 PMAA   45min PMMA spinning tool
6 Si Etch 100nm,500nm SMOODEEP 5-25 sec STS Etch
7 Resist Strip   strip/clean 20-30min wbnonmetal
8 Lithography 1um SPR3612 1 Front Etch 45min svgcoat/karl-suss/svgdevel
9 Si Etch 100nm,500nm SMOODEEP 5-25 sec STS Etch
10 Resist Strip   strip/clean 20-30min wbnonmetal
11 Diffusion Cleaning   Std. Clean 30-40min Wbdiff
12 Oxide Growth 10nm Wet 1100 1min tylan 1,2
13 Lithography 7um SPR220 2 Backside 2-3hour svgcoat/karl-suss/svgdevel
14 Si Etch 400um DEEP 100min STS Etch
15 Oxide Etch 500nm   3min P-5000
16 Resist Strip   strip/clean 20-30min Drytek2
17 Lithography 1.6um SPR3612 3 Metal 45min svgcoat/karl-suss/svgdevel
18 Au(Cr) Deposition 100nm,500nm Sputtering 3hour Metallica
19 Lift off     10min Wbgeneral
21 Anodic Bonding     10min evalign/evbond
22 Lithography 7um SPR220 4 Pyrex Etch    
23 Pyrex Etch 300um      
24 Resist Strip   Std. Clean   wbgeneral
25 Wafer Saw       wafersaw
7
Progress

• Processing Steps 1 (wbdiff) 2 (tylan)
• Purpose Etch stop for nanochannel definition
• Time 38 min 23 sec Temp 1100 C
• tox(target) 0.5 µm
• 1st batch, 4 wafers
• Tylan1 tox(measured) 0.46 /- 0.006 µm (3?)
• 2nd batch, 4 wafers
• Tylan2 tox(measured) 0.5 /- 0.0052 µm (3?)

8
Progress

• Materials purchased
• Particles (www.micromod.de)
• 6 µm fluorescent, magnetic particles
• 250 nm magnetic particles
• 15 nm fluorescent particles
• Si wafers for nanochannels (SNF stockroom)
• 4 for 500 nm channels
• 4 for 100 nm channels
• SOI wafers for microchannels (Pruitt inventory)
• 1 for 5 um channels
• 1 for 10 um channels

9
Emergent Problems

• Progress delay
• SNF mask writer down for repairs (Back-up plan
  mask writer _at_ UC Berkeley)
• Coral shut down on 7/11/06
• ThermcoPoly shut down as of 7/12/06
• Resource
• Metal tweezers out of stock until August
• Process undefined
• Litho on pyrex wafer - Alignment issues?
• Selective etch for pyrex?
• Etc.
• Need to buy more SOIs? (budget?)
• Testing setup

10
Future Work

• Current week
• Revise mask set 1 (microchannels) if necessary.
• Submit to Berkeley
• Finish mask set 2 (nanochannels)
• Poly-Si deposition (nanochannels)
• Next week
• Masks arrive
• E-beam (nanochannels)
• Litho (microchannels)