Title: OnChip Inductance Modeling and Analysis
1On-Chip Inductance Modelingand Analysis
- Kaushik GalaVladimir ZolotovRajendran
PandaBrian YoungJunfeng WangDavid Blaauw - kaushik.gala_at_motorola.comMotorolaAustin, TX
2Outline
- Overview of on-chip inductance effects
- Proposed methodology
- Impact of chip components on inductance effects
- Simulation acceleration techniques
- Conclusions
3What is Inductance?
- Inductance is a phenomenon created by current
traveling in a closed loop - relates the voltage induced to the variation in
magnetic flux - Driver injects current into a wire which returns
to the driver through a return path - power and ground lines (AC ground)
- substrate
- Loop inductance is proportional to the area of
the loop - L mA
4Frequency dependence
- Proximity effect
- Currents seek path of least impedance (Z R
jwL) - Current return paths are frequency dependent
- L reduces due to proximity effect
- R increases monotonically
- at very high frequencies, skin effect dominates,
causing current to flow near the conductor
surface R f 0.5
5Frequency dependence
- Proximity effect
- Currents seek path of least impedance (Z R
jwL) - Current return paths are frequency dependent
- L reduces due to proximity effect
- R increases monotonically
- at very high frequencies, skin effect dominates,
causing current to flow near the conductor
surface R f 0.5
High frequency current flow
6Why is Inductance Becoming Important?
- Reduction in wire resistances
- Technology scaling (thick wires, copper
interconnect) - Hierarchical metallurgy
- thinner wires at lower levels for density
- thicker layers at upper levels for low-skew
(clock),low-resistance (power) and low-delay
(signals) - Faster clock speeds and signal transitions
- Inductive coupling can exist between two nets
that arefar apart - Signals travel longer distances and the return
paths (loops) are wider - Spread of flux is greater for larger current
loops gt Inductance of wires becoming larger - Resistance and inductance becoming comparable
7Inductive Effects
- Impact on signal nets
- Oscillations, under/over shoot, inductive
cross-talk - Increase in signal delay, reduction in transition
time
RC - MODEL
RLC - MODEL
- Impact on power grid
- dI/dt noise induced in the grid due to package
inductance - Resonance effects
8Outline
- Inductance basics
- Proposed methodology
- PEEC model - Effect of various components
- Acceleration techniques
- Conclusions
9Traditional Loop Inductance Approach
Step 1 Define grid, signal topology. Step 2
Define a port at the driver end and short the
receiver end of the signal line, as shown. Step
3 Compute loop impedance (Rint jwLint) at
frequency w, using an extraction tool (eg
FastHenry), independent of capacitance. Step 4
Construct a lumped circuit model using the loop
resistance and inductance with interconnect and
load capacitance.
POWER GRID SIGNAL NET TOPOLOGY
Lint
PORT DEFINITION
10Ladder circuit model
- Approach suggested by Krauter et al. DAC 1998
- Step 1 Determine low frequency resistance Rdc ,
inductance Ldc - Step 2 Determine high-frequency inductance, Lhf
- Step 3 Determine cross-over frequency wc
- R(wc) wc L(wc), approximately wc Rdc / Lhf
- Step 4 Ladder synthesis for coplanar return
paths - equate Rdc, Ldc, Lhf and wc to determine R0, R1,
L0 and L1
LADDER CIRCUIT MODEL
11Loop Inductance Approach - Shortcomings
- Capacitances not modeled while extracting
inductance. - Device decoupling capacitance is missing,
Interconnect cap is lumped at the end. - Inductance of the entire loop is used for
simulation of signal net. - Inductance of the return path gets lumped into
that of the conductor. - Only the signal of interest is switched during
analysis. - In the power grid, many other signals will pull
current simultaneously. - All current injected in signal net return back to
driver port - Single port assumption.
12Current flow in real power grid
13Current flow in real power grid
14Current flow in real power grid
15Proposed circuit model
POWER GRID SIGNAL NET TOPOLOGY AND PROPOSED
CIRCUIT MODEL
- PEEC-based model includes
- R, L, C for power grid and signal net
- Mutual inductances between all segments
- Coupling cap between adjacent metal lines
- Package inductances
- Decoupling capacitances and current sources
between the two grids.
16PEEC model for wire segments
- Treat each wire segment in the topology as an
equivalent circuit - Partial Element Equivalent Circuit (PEEC) model
- A. Ruehli IBM Journal of RD, 1972
- Resistance computed as a function of wire
dimensions and resistivity. - Capacitance (grounded and coupling) computed
using formulae or 2/3D extraction tools - Wire/Package partial inductance (self and mutual)
computed using closed-form (analytical) formulae,
based on Geometric Mean Distance. - Frederick Grover, Inductance Calcultations
- C Hoer, et al. National Bureau of Standards,
1965
17Gate models
- Non-switching gates Panda et al, ISLPED 2000
- 80-90 of total gates
- Modeled as decoupling capacitances between the
power and ground grids - Capacitance is a function of input vectors and
circuit state - We compute the capacitance value statistically
18Gate models
- Non-switching gates Panda et al, ISLPED 2000
- 80-90 of total gates
- Modeled as decoupling capacitances between the
power and ground grids - Capacitance is a function of input vectors and
circuit state - We compute the capacitance value statistically
19Proposed Methodology - Advantages
- Advantages
- Makes no assumptions about current paths (no
single-port restriction) - Considers the effect of distributed interconnect
cap on current distribution - Models circuit components that significantly
alter current loops, and hence the inductance - decoupling capacitance of the non-switching gates
- transient switching activity in the power grid
- location of power/ground pads, along with package
inductance - Allows the study of shielding, explicit
decoupling caps, etc.
20Proposed Methodology - Issues
- Issues
- Analytical formula for partial inductance ignores
skin effects - Very wide metal lines need to be split into
multiple, parallel segments - Fully-dense L matrix leads to large simulation
time - Requires acceleration techniques
21Experimental power grid topology
CROSS-SECTION VIEW
TOP VIEW
- Topology details
- Grid area - 350mm 350mm
- Power grid laid out on 3 metal layers (M3, M4,
M5) - Signal bus (7 lines) on uppermost metal layer
(M5) - Power/ground pads connected at locations A, B, C,
D, E - Circuit/Simulation details
- Driver/Receiver inverter size - (P-width 45mm,
N-width 33mm) - Input slope - 100ps, Simulation period - 500ps
- All signal lines switched from 0 to VDD
22Loop vs. Partial inductance approach
- SPICE simulation comparison - 350mm long signal
bus
PARTIAL INDUCTANCE MODEL
LOOP INDUCTANCE MODEL
DELAY 11.0ps, UNDERSHOOT 270 mV
DELAY 6.1ps, UNDERSHOOT 140 mV
23Loop vs. Partial inductance approach
- SPICE simulation comparison - 700mm long signal
bus
PARTIAL INDUCTANCE MODEL
LOOP INDUCTANCE MODEL
DELAY 13.0ps, UNDERSHOOT 210 mV
DELAY 19.0ps, UNDERSHOOT 410 mV
24Outline
- Inductance basics
- Proposed methodology
- PEEC model - Effect of various components
- Acceleration techniques
- Conclusions
25Effect of device caps, current sources
- Device caps reduce oscillations
No Decoupling Caps
Original
DELAY 6.1ps, UNDERSHOOT 140 mV
DELAY 4.5ps, UNDERSHOOT 157 mV
26Effect of device caps, current sources
- Device caps reduce oscillations
- Current sources reduce undershoot
No Decoupling Caps
Original
DELAY 6.1ps, UNDERSHOOT 140 mV
DELAY 4.5ps, UNDERSHOOT 157 mV
No current sources DELAY 6.5ps, UNDERSHOOT
165 mV
27Effect of pad inductance
Pad inductance significantly changes absolute
voltages
With Pad Inductance - Absolute voltages
Without pad inductance
DELAY 6.1ps, UNDERSHOOT 140 mV
DELAY 6.0ps, UNDERSHOOT 240 mV
28Effect of pad inductance
Pad inductance significantly changes absolute
voltages Relative voltages are not greatly
affected
With Pad Inductance - Relative voltages
Without pad inductance
DELAY 6.0ps, UNDERSHOOT 120 mV
DELAY 6.1ps, UNDERSHOOT 140 mV
29Effect of pad location
Pad locations change current return paths and
hence inductance.
1 power pad at C, 1 ground pad at D
2 power pads at A and C, 2 ground pad at B and D
DELAY 6.3ps, UNDERSHOOT 160mV
30Outline
- Inductance basics
- Proposed methodology
- PEEC model - Effect of various components
- Acceleration techniques
- Conclusions
31Acceleration techniques
- Model Order Reduction
- PRIMA, Odabasioglu et al. ICCAD 97
- Guaranteed passivity of reduced order model
- Increase in number of ports and number of
moments/port leads to large run-time for the
reduction algorithm - Sparsification
- Drop small entries from the partial inductance
matrix - Can lead to a non-positive definite matrix gt new
system generates energy - No control/measure of loss in accuracy
- Krauter et al. ICCAD 95
- Shift and truncate
- Remove couplings between wires with large
separation - Better accuracy, guaranteed passive
- Ken Shepard et al. CICC 99
- Halos around critical nets define dense coupled
clusters
32Proposed Acceleration - PRIMA
- 1. Define ports at VDD/GND pads, driver to signal
connections,and driver to rail connections - 2. Compute multi-port reduced order model for the
linear (RLC) circuit - 3. Combine with non-linear devices, connected to
appropriate ports - 4. Simulate the reduced system in SPICE.
33Proposed Acceleration - Sparsification
- Since the partial inductance matrix is dense, the
computation of the reduced order model is
expensive. Hence, we use simple block diagonal
partitioning to obtain a sparse L matrix. - Guaranteed passive
- Loss of accuracy
- Experiments show the error to be lt 5 for most
cases
34Acceleration results
35Acceleration results
36Conclusions
- Presented common inductance effects for on-chip
structures - Discussed traditional loop-inductance based model
- Proposed a PEEC based inductance model
- includes device decoupling capacitance, switching
current,pad inductance - compared with traditional loop based approach
- studied effect of a number of model elements
- Discussed methods for accelerating analysis
- Future Work
- Enhance the model order reduction algorithm with
fast multipole acceleration, to speed up
processing ofdense matrices.