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Adaptive On-Chip Test Strategies for Complex Systems

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Title: Adaptive On-Chip Test Strategies for Complex Systems


1
Adaptive On-Chip Test Strategies for Complex
Systems
  • V. Stopjaková

Department of Microelectronics, STU Bratislava,
Slovakia
2
Electronics Industry Trends
  • Achieved successful penetration in different
    domains
  • Emergence of technology
  • Greater complexity
  • Increased performance
  • Higher density
  • Lower power dissipation

3
Market-Driven Products
  • Meet user Quality requirements
  • satisfying users to buy products
  • Created an unprecedented Dependency
  • market-driven products
  • Maintain competitive by providing
  • Greater Product Functionality
  • Lower Cost
  • Reduced Interval (time to market)
  • Higher Reliability

4
High Complexity Mixed Systems
  • A single chip Logic, Analog, DRAM blocks
  • Embed advanced blocks
  • FPGA, Flash, RF/Microwave
  • Others
  • MEMS
  • Optical elements

5
High Complexity Mixed Systems
  • How to test the mixed chip?
  • With external test only - need multiple ATE for a
    single chip Logic ATE, Memory ATE, Analog ATE
    (Double/Triple Insertion)
  • Need special ATE with combined capabilities

6
High Complexity External Test
  • External Test Data Volume can be extremely high
    (function of chip complexity)
  • Requires deep tester memory for scan I/O pins
  • Slow test with long scan chains

Source LogicVision
7
High Complexity On-chip Test
  • Solution Dedicated Built-In Test for embedded
    blocks
  • Tasks repartitioned into embedded test and
    external test functions

On-chip Test Pattern Generation Result
Compression Precision Timing Diagnostics Power
Management Test Control Support for Board-level
Test System-Level Test
Memory
Logic
Mixed-Signal
I/Os Interconnects
Chip, Board or System
Source LogicVision
8
Technology motivation
  • many CMOS defects escaping logic testing
  • physical imperfections causing delay faults
  • unmodeled faults (weak-1, weak-0)

Quality Reliability of IC affected !
  • Conventional test methods not effective

New on-chip test methods have to be applied
9
Supply Current Testing
I
DDT
I
DD
I
DDQ
faulty
PASS/FAIL reference
fault-free
t
Figure 1 Principle of the supply current testing
10
IDDQ/T testing - realization
  • Off-chip measurement by external equipment
  • On-chip monitoring using Built-In Current (BIC)
    monitors
  • Off-chip monitors
  • no additional chip area needed
  • - slow measurement (decoupling capacitor)
  • - small current masked by noise
  • BIC Monitors
  • sensitive, very fast and accurate
  • applicable in on-chip methods
  • chip area overhead
  • CUT perturbation

11
IDDQ testing crucial issues
  • Pass/Fail limit setting
  • represents fault-free value of IDDQ current
  • depends on number of factors technology, type of
    circuits,...
  • if too high - defective circuits pass
  • if too low - undesired yield decrease (false
    fault detections)
  • Test vectors
  • Measurement Hardware

12
On-chip IDDQ Monitoring Principle
V
DD
DUT
I
G

DD
ND
-
Pass/Fail

Sensing element
BICM
Vref
G
ND
Figure 2 On-chip supply current testing
13
Main requirements for on-chip current monitors
  • ability to sense high currents
  • testing of low-voltage circuits
  • a minimal number of extra pins
  • design simplicity
  • applicable for recent VLSI circuits
  • Monitor development focused on
  • effect on performance of the CUT
  • area overhead
  • testing speed
  • accuracy and sensitivity

14
Example of a quiescenton-chip monitor
  • based on CCII current conveyor
  • IDD current measurement ? current comparison ?
    IDDQ sampling

Figure 3 Current conveyor based quiescent BIC
monitor
15
BIC monitor layout
  • size of 1? bypass switch is 650?m x 210?m
    (80)
  • total area of 0.22 mm2

Figure 4 The core of the monitor layout
16
Evaluation results
  • resolution of 10nA
  • Pass/Fail limit of 50nA (sensitivity)
  • 1 MHz testing speed
  • VDD degradation max.100mV
  • area overhead of 0.22 mm2
  • ability to handle large CMOS IC

17
Useful for Differential Analog Test
Figure 5 Experimental BIC monitor usage in a new
ABIST approach
18
Current mirror IDD principle

Figure 6 Current mirror principle of IDD
monitoring
19
Example of a transienton-chip monitor
V

DD
V
BIC monitor
ref
V
DD
D
V
mon
Current
CUT
Mirror
I
I
DD
MIR
C
M
S
V
offset
Test
Figure 7 Transient BIC monitor
20
Experimental digital chip
  • both BIC monitors integrated in BIC-MU
  • BIC-MU implemented into a digital circuit
  • a digital multiplier used as a CUT
  • fabricated in 0.7?m CMOS
  • multiplier size 850?m ? 850?m
  • area of BIC-MU is 0.24mm2
  • around 24 of the total chip area

21
Figure 8 Layout of the experimental chip
22
Versatility Problem of IDD Testing
  • IDD testing proven very successful for digital
    circuits
  • Dedicated fault class only
  • Use in submicron technologies limited
  • IDD testing for analog IC not straightforward
  • Large variety of analog IC
  • Specifications and behavior unique
  • Difficult to generalize analog tests
  • Validation up to now done using functional
    criteria

Current consumption analysis using Neural Networks
23
Artificial Neural Networks Approach
  • Current signature analysis for presence of
    abnormal (faulty) behavior
  • Massively parallel and distributed structures
    capable of adaptation
  • No explicit Pass/Fail limit formulation required
  • Excellent versatility
  • Accuracy and sensitivity
  • Reduced number of TP (time to test)

24
IDD analysis using ANN
Figure 9 ANN-based analysis of IDD
25
Mathematical model
Figure 10 Mathematical model of an artificial
neuron
26
Activation function
Figure 11 Activation function with top and bottom
decision levels
27
ANN Classification of tested ICs
  • ANN with two outputs n1, n2
  • Classification within top/bottom decision levels

n1 ? TDL n2 ? BDL ? PASS n1 ? BDL
n2 ? TDL ? FAIL Otherwise ? Non Classified
28
Analog DUT Example
  • Two-stage CMOS operational amplifier
  • A pulse used as input stimuli
  • Good patterns technology parameters and
    temperature variations
  • Faulty behavior basic defects injected
  • (GOS, DOP, SOP, DSS, GSS, GDS)

29
Effect of the GOS Fault
Figure 12 Effect of the GOS faults on IDD signal
in time and frequency domain
30
Effect of the DSS Fault
Figure 13 Effect of the DSS fault on IDD signal
in different domains
31
ANN setup
  • 660 tested power supply current waveforms
  • 200 faulty patterns
  • 460 fault-free patterns
  • 32 input nodes
  • various training set 200, 100, 76, 50 and 26
  • various number of hidden units 2, 6, 10, 14, 18,
    22
  • top decision level 0.9
  • bottom decision level 0.1
  • 10 independent measurements

32
Classification results
Figure 14 Percent Correct Classification (PCC)
for time domain
33
Classification results(2)
Figure 15 Percent Correct Classification for
frequency domain
34
Conclusions
  • To ensure quality of SoC Technologies
  • On-chip Test is added into the designs of
    embedded cores
  • New adaptive on-chip approaches needed for
    different test functions
  • On-chip current monitoring effective but not
    versatile and limited to CMOS digital circuit
  • ANN classification of defective IC
  • ability of testing mixed-signal circuits
  • ability of sensing negligible differences
  • possibility to analyse other circuits parameters

35
Thank YOU for your attention!
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