Title: Evaluation of the EPIC flux cross-calibration from 2XMM sources
1Evaluation of the EPIC flux cross-calibrationfro
m 2XMM sources
- R. Saxton, S. Mateos, A. Read,
- S. Sembay
Mateos et al., 2009, AA, arXiv.0901.4026
22XMM sources
3pn vs MOS1 energy dependence
Distributions of flux ratios fitted with Gaussian
profiles
MOS1 vs MOS2 energy dependence
4pn vs MOS1energy dependence
pn / MOS agreement better than 3 in 0.2-0.5
keV band
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
constant offset from MOS cameras of 7-9 from
0.5-4.5 keV
pn / MOS agreement worse above 4.5 keV (12.5)
5MOS1 vs MOS2energy dependence
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
MOS cameras agree to better than 4 at all
energies
6pn vs MOS1time dependence
MOS to pn flux cross-calibration constant gt0.5
keV strong dependence on time lt0.5
keV evolution of the MOS RMF with time
7MOS1 vs MOS2 time dependence
MOS flux cross-calibration constant at all
energies
8pn vs MOS1offaxis dependence
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
- Variations of MOS vs pn relative flux calibration
vs offaxis - ARF effect
- QE spatial variation in QE offaxis (MOS and pn)
- Vignetting General vignetting function
- PSF Uncertainties in offaxis PSF
9MOS1 vs MOS2offaxis dependence
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
- Variations of MOS relative flux calibration vs
offaxis - ARF effect
- QE spatial variation in QE offaxis (MOS and pn)
- Vignetting General vignetting function
- PSF Uncertainties in offaxis PSF
10 Azimuthal dependence - PN v MOS-2
1
4
2
4
1
3
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
3
2
Strong azimuthal-angle dependence at high
energies
11RGA obscuration Azimuthal dependence
Excluded sources at offaxislt2 arcmin
B-4
B-4
1
4
B-4
B-4
B-4
2
4
1
3
B-5
B-5
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
Sources divided in 4 azimuthal angle bins based
on DETX/DETY coordinates
3
2
Strong azimuthal angle dependence at high
energies Sources lying along the RGA dispersion
axis show a large gradient in relative flux
Calibration of RGA blocking factor incorrect at
high energies?
12RGA obscuration Azimuthal depencence
Excluded sources at offaxis lt2 arcmin
1
4
B-5
B-4
B-4
B-4
2
4
1
3
B-5
B-4
B-5
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
Sources divided in 4 azimuthal angle bins based
on DETX/DETY coordinates
3
2
Strong azimuthal angle dependence at high
energies Sources lying along the RGA dispersion
axis show a large gradient in relative flux
Calibration of RGA blocking factor incorrect at
high energies?
13Current azimuthal vignetting factor for MOS-1
1.5 keV _at_ 9 amin offax
9 keV _at_ 9 amin offax
14Low-energy azimuthal dependence MOS-1
Excluded sources at offaxislt 2arcmin
1
4
B-5
B-4
B-4
B-4
2
4
1
3
B-5
B-4
B-5
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
Sources divided in 4 azimuthal angle bins based
on DETX/DETY coordinates
3
2
Strong azimuthal angle dependence at low
energies Sources lying on CCDs from different
batches show a large gradient in relative flux
15Low-energy azimuthal dependence MOS-2
Excluded sources at offaxislt2 arcmin
B-4
B-4
1
4
B-4
B-4
B-4
2
4
1
3
B-5
B-5
10.2-0.5 keV 20.5-1 keV 31-2 keV 42-4.5
keV 54.5-12 keV
Sources divided in 4 azimuthal angle bins based
on DETX/DETY coordinates
3
2
Smallish azimuthal angle dependence at low
energies. Batch effect not so strong here ?
16 Consistent improvements in the MOS2/pn flux
ratio, with some evidence for similar
improvements for MOS1/pn Large scatter, low
stats at very lowest energy so far
17Conclusions
- Excellent agreement of the two MOS cameras (lt4)
at all energies - MOS cameras register
- 7-9 higher flux than pn below 4.5 keV
- 10-13 flux excess at the highest energies
- No evolution of flux ratios with time except in
the 0.2-0.5 keV band - Gradual degrading of the MOS redistribution
function -
- MOS to pn excess increases with offaxis ARF
effect - Strong dependency of MOS to pn excess 4.5-12 keV
flux on azimuthal-angle -
18TO DO
- Fudge RGA obscuration to give larger azimuthal
effect for MOSs at high energies ? Use SCISIM
to justify physical parameters ? - Put in a batch-specific, low-energy QE
contribution for MOS-CCDs ? - 2XMM could benefit from
- - MOS RMFs made spatially, temporally
dependent. - - EBG PSF ?
- - Spectral dependence in flux calculation
- Strong dependency of MOS to pn excess 4.5-12 keV
flux on azimuthal-angle - Calibration of RGA blocking factor (RGA
absorption) incorrect at high energies?