A Ferroelectric Directly on Silicon

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05204040213623
A Ferroelectric Directly on Silicon M. P.
Warusawithana, C. Cen, C. Sleasman, L. F.
Kourkoutis, Y. L. Li, J. Klug, P. Ryan, L-P.
Wang, H. Li, M. Bedzyk, L.Q. Chen, D. A. Muller,
J. C. Woicik, J. Levy and D. G. Schlom.
NSF-DMR05071460704022
Penn State Univ. Pittsburgh Cornell
The Si/SiO2 interface is the backbone of modern
transistor technology. We have replaced the SiO2
layer of this interface (a passive insulating
layer) with SrTiO3 an active insulating layer
that is ferroelectric at room temperature. This
material enables new devices with enhanced
functionality for memory and transistor
applications.
A ferroelectric polarization image, written on
SrTiO3/Si, illustrating the structure of
SrTiO3/Si.