Charge Enhancement in GaAs Photoemission

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Charge Enhancement in GaAs Photoemission

• Polarized electron beam is produced by
  photoemission from GaAs
• Photoemission current is suppressed by electrons
  trapped at the surface.
• Tungsten grid is deposited to discharge trapped
  electrons.
• Grid dimension
• 10 mm width 23 mm space
• line height 30 nm
• Figure shows the charge enhancement.

User Takashi Maruyama, SLAC Principal
Investigator E. L. Garwin, SLAC NNUN Site
Stanford University ty