NUCLEAR ENERGY AND SAFETY

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• NUCLEAR ENERGY AND SAFETY
• SEMICONDUCTOR DETECTORS FOR NUCLEAR RADIATION
  SPECTROMETRY
• Description
• Semiconductor detectors take one of the relevant
  places among devices of a nuclear spectrometry.
  Fundamental advantages of semiconductor detectors
  of nuclear particles high energy resolution,
  linearity of characteristics in wide energy
  region for different particles possibility
  provided with good geometry of experiments not
  sensitivity to magnetic fields.
• Depending on nuclear - physical problems the
  detectors of various types will be utillized. The
  Department of Radiation Physics at Kyiv Institute
  for Nuclear Research has developed and produced
  the detectors of following types

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1. Surface - barrier detectors of a total
absorption (?-detectors) on the basis of
high-ohmic silicon n- and p- type of conductivity
for a spectrometry of nuclear radiations.E-detect
or characteristicsWidth of sensitive
region 300?3000 ?Reverse voltage 100 ? 400
VEnergy resolution ? 12. Detectors of
specific energy losses of charged particles
(dE/dx-detectors) for operation in telescopes for
definition of a spectrum of masses of charged
particles participating in composite nuclear
reactions.dE/dx-detector characteristicsWidth
of sensitive region 20 ? 200 ?Reverse
voltage 50 ? 100 VEnergy resolution ? 13.
Lithium-drifted silicon detectors (Si
(Li)-detectors) on the basis of silicon
compensated to lithium, for a spectrometry of
charged particles.Si(Li)-detector
characteristicsWidth of sensitive region 500 ?
5000 ?Reverse voltage 100 ? 500 VEnergy
resolution ? 1
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• CONCLUSIONS
• 1. Semiconductor detectors are among the most
  precise devices employed for spectral analysis of
  nuclear radiation due to their high energy
  resolution and possibility of divided on masses
  with high accuracy.
• 2. Position-sensitive detectors have position
  resolution of some microns.
• 3. Preirradiation of semiconductors and doping by
  isovalent impurities are the progressive methods
  for increasing of radiation hardness of silicon
  and other materials due to the creation the sinks
  for initial radiation defects.
• 4. Application the neutron-transmutation doped
  silicon for developing of detectors leads to
  increasing of stability their characteristics and
  permits to produce the detectors with improved
  parameters.