E field intensity of n-on-p with p-stop

1
E field intensity of n-on-p with p-stop
Substrate voltage -500 V p-stop concentration
1E13 /cm2
Substrate voltage -500 V p-stop concentration
1E13 /cm2
Substrate voltage -500 V p-stop concentration
1E12 /cm2
Substrate voltage -500 V p-stop concentration
1E12 /cm2
Interface charge 2E12 /cm2
2
Dependence of p-stop concentration

• Probing E field intensity at the p-stop edge .
• The p-stop_1E12 is much smaller, because p-stop
  concentration is less than interface charge, the
  E field spread in p-stop.
• ?the point at the edge becomes smaller one.

3
Electoron concentration
Substrate voltage -500 V p-stop concentration
1E12 /cm2
Substrate voltage -500 V p-stop concentration
1E13 /cm2
4
Dependence of interface chage

• Probing E field intensity at the p-stop edge .
• E field intensity at the interface charge 2E13
  /cm2 is smaller than 2E12/cm2 one, because
  interface charge is larger than p-stop
  concentration.

5
E field intensity deferent ininterface charge
Substrate voltage -500 V Interface charge
1E13 /cm2
Substrate voltage -500 V Interface charge
1E12 /cm2
P-stop concentration 5E12 /cm2
6
Electron concentration of n-on-p with gate
electrode
Substrate voltage -200 V Gate voltage -20 V
Substrate voltage -200 V Gate voltage -40 V
Accumulation layer is broken for the gate voltage
lt -40 v.
7
E field intensity of n-on-p with gate electrode

• Probing the point under the gate electrode.
• At the gate voltage -40V, electron concentration
  drops rapidly.