Title: Radio Implementation
1Radio Implementation
2Critical Research Issues in Radio Implementation
- Flexible RF Systems
- Ultra Wideband Design
- Software Validation
- Enhanced Critical Components
3Implementation of a UWB SDR
- Faculty J. H. Reed, R. M. Buehrer, P. M. Athanas
- Funding ONR
- Description We have developed high performance,
extremely versatile SDR platform using
commercially available off-the-shelf hardware,
for use in a wide variety of Wideband and
particularly Ultra wideband research and
development.
Read more C. R. Anderson, A Software Defined
Ultra Wideband Transceiver Testbed for
Communications, Ranging, and Imaging, Ph. D.
Dissertation, Sept. 2006
4Secure Passive RFIDs
- Faculty Patrick Schaumont and Dong Ha
- Funding NSF, SRC
- Description We are developing a secure RFID
based on Ultra-Wideband (UWB) communications.
Existing secure RFIDs require cryptographic
primitives implemented in digital hardware, which
increases cost, power consumption, and latency.
- Approach We employ time-hopping pulse-position
modulation (TH-PPM) and UWB, which makes
eavesdropping extremely difficult to eliminate
the need for encryption of data.
5RF Quadrature Signal Sources with Analog I/Q
Error Correction
- Faculty S. Raman
- Funding NSF, Jazz
- Description VCO with I/Q correction
- Cross-coupled LC quadrature VCO with integrated
I/Q error correction capability - Fabricated in Jazz 0.18 mm RF CMOSDie Area 1.1
x 0.7 mm2 including pads - Ultra-wide phase tuning range achieved with
minimal impact on amplitude ? can tune through
30 of I/Q imbalance before VCOs become unlocked
6UWB Transmitters for Wireless Sensor Nodes
- Faculty S. Raman
- Funding NSF
- Description UWB TX
- Fabricated in Jazz 0.18 mm RF CMOSDie Area 1.1
x 0.7 mm2 including pads - Transmitter generates DBPSK modulated 1ns pulses
(500 MHz -10dB BW) from RF carrier frequency from
4 or 8 GHz VCO - Low-Power multiband design based on
single-sideband mixing from single source VCO
currently being fabricated in 0.13 mm RF CMOS
Differential UWB (1 ns) output pulses
62.5 MHz reference
7AN ANALOG/MIXED-SIGNAL FFT PROCESSOR FOR
ULTRA-WIDEBAND OFDM SYSTEMS
Typical Integrated Broad-band OFDM Direct
Conversion Receiver
- Faculty S. Raman
- Sponsor NSF
- Description Reduce the power consumption and
increase the dynamic range of the ADC by
utilizing the sub-channel format and mixed signal
processing techniques. - Equivalent 8-bit converter currently in
fabrication in Jazz 0.13um RF CMOS ? predict x10
reduction in DC power consumption, improved
linearity performance
Proof-of-Concept test-chip in 0.13 mm RF CMOS
8Silicon-based microwave/mm-wave PAs
- Faculty S. Raman
- Sponsor MA-COM
- Description
- Fabricated in Atmel SiGe2RF Process
- Fully differential Power Amplifier at 30 GHz
- Fully Monolithic Design (on chip matching
networks) - Coplanar Waveguides used as distributed elements
Pout vs. Pin small-signal gain (S21) simulated
and measured results at 26.5 GHz.
Die Photograph of the fabricated PA. Die Area
1.75 mm x 1.15 mm
9High-Isolation DC-contact Lateral RF MEMS
Switches
- Faculty S. Raman
- Sponsor RFMD
- Description
- Switches designed and fabricated in a Commercial
MEMS foundry (MEMSCAP) Metal MUMPS process - Lateral electrostatic actuation provides low DC
voltage operation measured actuation at 11-12V.
Approaching viability for low-voltage SoC
integration - Isolation is improved with multiple heads in
series, -63 dB isolation achieved on high-p Si
with 4 heads _at_ 2 GHz
Different configurations of the head with width
and angle variations to understand Force and
contact resistance.