GOG Fabrication Process Flow

1
GOG Fabrication Process Flow

• Low temperature annealing
• 150? 8 hr and then 200?40 min in 90 N2 and 10
  O2
• Glass substrate
• Corning 7059 glass
• Similar CTE value with Ge

2
Ge-on-ITO Glass Structure
Anneal Condition 150oC 9hr 300oC 1hr
(84)
100nm
Ge surface, RMS 10.88 nm

• Good optical transmission and electrical
  conductivity.
• Bandgap of ITO is 3.5 4.3 eV
• The fermi level is above conduction band
• Illumination from the glass side.
• This structure may be comparatively excellent
  due to escaping from the recombination at
  surface .
• Pt gate Reduce the leakage current

ITO surface, RMS 0.4 nm
3
I-V Curves of GOP MOS Detectors
The dark and photocurrent of GOP Pt / SiO2/ Ge
MOS detector under different light wavelengths
exposure.
The GOP surface, RMS 10.736 nm
4
Crown-ether Cyanide Passivation

• Formation of GeCN bonds by the reaction of CN
  ions with Ge dangling bonds could passivate the
  Ge/SiO2 interface states. (ex Cu2O, GaAs-based
  silicon oxide)
• Crown ethers are useful as phase transfer
  catalysts
• heterocyclic chemical compounds
• The 18-crown-6 molecule effectively captures a K
  ions

18crown-6 (C12H24O6)
Kion o diameter (A) 2.66
Cavity o diameter (A) 2.63.2
O atom C atom H atom
Ref Steed, J. W., Atwood, J.L., Ed.
Supramolecular Chemistry 2000, John Wiley Son.
Ltd.