This new family of N-Channel MOSFETs utilizes the proven Gen 10.59, IR

1
PRESS RELEASE
Gen10.59, 25V and 30V MOSFETs for DC-DC
Applications
SINGLE DIE DATA SHEETS
This new family of N-Channel MOSFETs utilizes the
proven Gen 10.59, IRs latest silicon technology.
The new 25V and 30V devices are being offered in
a variety of packages including DPAK, SO-8 as
well as the compact PQFN 5x6 and PQFN 3x3.
Compared to the previous generation (Gen 10.55),
the new devices feature benchmark RDS(on)
performance and are aggressively priced.
DUAL DIE DATA SHEETS
HI-RES GRAPHIC
MOSFET HOME PAGE

• Features
• 25V and 30V MOSFETs
• Available in SO-8, PQFN 5x6, PQFN 3x3 and D-PAK
• 20V Vgs maximum gate rating
• Excellent Figure-Of-Merit at Vgs 10V
• Very good Figure-Of-Merit at Vgs 4.5V
• RDS(on) as low as 2.7m?
• Dual SO-8 offers price reduction Vs 2 single
  SO-8, if RDS(on) gt 15m?
• PQFN has very low thermal resistance to PCB
• Consumer qualification level
• MSL1 (PQFN 5x6 MSL2)
• Lead Free, RoHS compliant, halogen free

• Advantages
• The new MOSFETs offer low RDS(on) and Qg and are
  suited to point-of-load synchronous buck
  converter applications between 4A and 15A per
  MOSFET.
• The low conduction losses improve full-load
  efficiency and thermal performance while the low
  switching losses help to achieve high efficiency
  even at light loads.
• Depending on the application, the new MOSFETs
  enable a simplified cost-effective performance
  upgrade path for existing designs.
• Dual SO-8s allow a two-for-one exchange to
  reduce component count, shrinking the PCB area
  and increasing power density.

April 2009