Consortium for Metrology of Semiconductor Nanodefects

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Consortium for Metrologyof Semiconductor
Nanodefects

• Semi-Annual Research Review
• 20-21 July 2000

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Highlights (1999-2000)

• 5 active graduate students, 4 undergrads
• Michael Jordan and Ping Ding receive Ph.D.
• DDSURF continued development,Technology Transfer
  Workshop IV
• Film capability added to DDSURF
• 5 Technical Papers
• SRC Project on Hybrid-Emission Defect Instrument
  Funded (100k/yr for 3 years)

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Tracking Consortium Graduates
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Member Organizations
ADE/ADE Optical AMD Applied Materials Duke
Scientific Inspex/Hamamatsu KLA-Tencor cumulati
ve 1996-2000, current members are boldface
Lawrence Livermore Labs OSI Inc. Intel SEMATECH Su
mitomo Sitix VLSI Standards
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Recently Completed Projects

• Silicon Defects and Optical Wafer Inspection
  Systems
• Scatterometer Enhancements
• Light Scattering by Particles/Defects on CMP
  Wafers

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Silicon Defects and Optical Wafer Inspection
Systems

• Process for Fabrication of Standard Pyramidal
  Pits in Si
• Artifacts Fabricated, Characterized, and Used in
  Scattering Experiments
• Scattering Model Comparison

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Pyramidal Pit (0.53 µm) in Si
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In-plane, Differential Scatter of Pyramidal Pits
in Si
s-polarization incidence angle 65 wavelength
0.6328 µm
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In-plane, Differential Scatter of0.34 mm
Pyramidal Pit in Si
s-polarization incidence angle 65 wavelength
0.6328 µm
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Scatterometer Enhancement

• New visible wavelength scatterometer designed,
  built, and tested
• Provides BRDF measurement capability
• Competitive specs
• Used in thesis projects

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Light Scattering by Particles/Defects on CMP
Wafers

• Identified and defined critical CMP defects
• Acquired standard defect samples
• Dishing correlation as function of materials
• Angle-resolved scattering measurements of
  roughness, patterns, and particles
• Experimental results in reasonable agreement with
  models

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Dishing Material and Geometry (Pitch) Dependence
Modulus of elasticity Em(W)59e-6
lb/in2 Em(Cu)17e-6 lb/in2 Dishing at L10 mm
and PD1/2 D(W)71.4 nm D(Cu)144 nm
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Natural Scratch and Artifact
v-shape, 0.85 mm wide, 95 nm deep scratch on SiO2
- made by diamond tip on AFM
v-shape, 1.3 mm wide, 4.7 nm deep scratch on SiO2
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Scattering by 0.305 mm PSL Spheres on Si
Substrate on SiO2 Film
0.785-mm SiO2
Si
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Consortium Research Roadmap

• Instrumentation and Scatterometry
• Fabrication and Characterization of Standards
• Modeling and Simulation