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Title: M. V. Lalic and S. O. Souza


1
The first principles study
of optical properties of
BGO and BSO scintillators
  • M. V. Lalic and S. O. Souza
  • Universidade Federal de Sergipe
  • Aracaju, Brazil

2
Scintillators convert the energy of incoming
radiation into emission of light.
  • Used as detectors in
  • scientific research high energy and
  • nuclear physics
  • industry quality control, oil
  • exploration, airport security
  • medicine positron emission
  • tomography (PET),
  • computer tomography

3
The process of detection of the radiation
  • The incident radiation energy is converted into
    excitation energy of atoms, creating a large
    number of electron-hole pairs in the material.
  • The electron-hole pairs recombine, transferring
    the energy to the luminescent ion which is
    promoted to excited state.
  • The luminescent ion returns to the ground state,
    emitting a radiation in the visible or the UV
    range.
  • The emitted radiation is detected by the
    photodiode or photomultiplier.

Photomultiplier tube
Anode
4
3 aspects of the scintillation process to
understand 1.) Absorption of the incoming
radiation 2.) Transfer of the absorbed energy to
the luminescent centers 3.) Emission process
  • Desired characteristics of the scintillators
  • transparency
  • high density
  • radiation hardness
  • large light output
  • short decay time

5
  • Discovered by Weber, Monchamp 1973
  • Main component of high resolution positron
    emission tomography (PET)
  • Used in the largest electromagnetic calorimeter
    in the world (CERN Geneva)

Bi3Ge4O12 Bismuth orto germanate (BGO)
6
  • BGO Good characteristics
  • High density (7,13 g/cm3)
  • Short radiation length
  • Large light output (9000 photons/MeV)
  • Large hardness (5 Mohs)
  • Low afterglow
  • Absence of hygroscopicity and cleavage
  • Crystal growth refined to a high degree of
    perfection
  • BGO drawbacks
  • Long decay time (300ns) ? speed too slow for
    some applications
  • Radiation hardness not sufficient in some
    applications
  • High cost due to Ge

7
  • Bi3Si4O12 Bismuth orto silicate (BSO) The same
    crystal structure as BGO, Si?Ge
  • Much faster response (100ns)
  • Lower cost
  • But
  • smaller light output (1/5 of the BGO)
  • Other characteristics very similar to the BGO
  • ? BSO can substitute the BGO in some applications

8
BGO and BSO luminescence state of knowledge
  • A lot of experimental work
  • Almost no theoretical studies
  • Both are intrinsic scintillators
  • Emission assigned to Bi3 ion 3P1?1S0
    transition (Weber, 1973)
  • Transparent from 300 to 6000nm
  • Emission spectra
  • wide, due to extensive Stokes shift of the Bi
  • 2. Peak maximum at 480nm (blue light)

M. Cobayashi et al, Nucl. Instr. And Meth. 372
(1996) 45-50
9
Transmission spectra
Ishii et al. Optical Materials 19 (2002)
201212 Absorption edge 286 nm Band gap Eg
4,34 eV
P. Kozma et al, Nucl. Instr. and Meth. A 501
(2003) 499 Absorption edge 300 nm Band gap Eg
4,13 eV
10
Absorption spectra
BGO
BSO
?
Weber et al. J. Appl. Phys. 44 (1973) 5495
11
  • Electronic transition studied so far
  • Valence band impurity levels
  • Valence band exciton levels
  • Missing
  • Valence band conduction band
  • electronic transitions
  • This work
  • Theoretical study of the BGO and BSO electronic
    structure
  • Calculation of their optical properties
    determined by valence band
  • conduction band electronic transitions

Outline
  • Basics about the calculation method
  • Results of the calculations and conclusions
  • Possible improvement of the theoretical
    description

12
Theory
  • How to solve the quantum many-body problem?

13
Seek for approximate solutions!
14
Sucessive approximations
non-relativistic Hamiltonian
full relativistic Hamiltonian
One electron Hamiltonian
fixed nuclei
Relativistic effects
Nuclear motion
Higher-order effects
Excited states
Born Openheimer Approximation
One-electron approximation
15
One-electron approximation -- constructs an
effective potential for each individual electron
in solid -- many-body Hamiltonian is replaced by
a set of Hamiltonians describing
non-interacting particles
,
description of the electronic ground state
Perturbation theory
Partial recuperation of the neglected effects
(nuclear motion, spin orbit, )
  • Hartree-Fock Theory (HFT)
  • Density Functional Theory (DFT)
  • Green-function technique

Realized by
16
DFT Two theorems of Hohenberg and Kohn
1 1
Potential of the nuclei Vext
Electronic ground state density
  • Total ground-state energy
  • is unique functional of ? !

17
Consequences
Introducing a set of one-electron orbitals and
varying E with respect to ?
Kohn-Sham Equations
18
  • How to solve Kohn-Sham equations?
  • Problem Veff depends on ?i
  • Solution self-consistency!

19
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20
  • Methods based on DFT
  • (L)APW (linear) Augmented Plane Wave
  • LMTO Linear Muffin Tin Orbital
  • KKR Korringa Kohn Rostoker
  • Pseudopotentials
  • First Principle methods
  • Input crystal structure, atom types
  • Output ground-state properties of a solid

21
This work
  • FP-LAPW method
  • WIEN2K code
  • BGO, BSO PURE CRYSTALS
  • TO STUDY THEIR ELECTRONIC
  • AND OPTICAL PROPERTIES

22
Calculation details
  • Valence states
  • 83Bi Xe4f145d106s26p3
  • 32Ge Ar3d104s24p2
  • 14Si Ne3s23p2
  • 08O He2s22p4

-- Atomic sphere radii BGO
BSO Bi 2.3 a.u.
Bi 2.3 a.u. Ge1.8 a.u. Si
1.6 a.u. O 1.45 a.u. O 1.4 a.u.
RKmax RMT x Kmax 7.0 for both
compounds Gmax 14 LM expansion for O is
limited up to L4. Matrix sizes 7971 (BGO)
8277 (BSO) 6k-points in IBZ (80 in the whole
BZ) Exchange and correlation GGA96
23
Crystal structure
Cubic space group I-43d (No. 220) Conven. unit
cell 4 formula units (76 atoms) Primitive unit
cell 2 formula units (38 atoms) No inversion
symmetry ! ? complex calculations!
-- Bi surrounding 6 O arranged in a strongly
distorted octahedron -- Ge (Si)
surrounding 4 O arranged in a tetrahedron
24
Relaxation of the lattice parameter
BSO
BGO
BGO
BSO Experiment a 10,524
Å(a) a 10,278 Å (b) Theory
a 10,594 Å a 10,379 Å
  1. S.F. Radaev et al, Kristallografiya 35 (1990) 361
  2. J. Barbier et al, Europ. J. of Solid State In.
    Chem. 27 (1990) 855

25
All atomic positions optimized!
Atomic distances (in Å)
  • BSO
  • Bi O 2,212 (3)
  • Bi O 2,595 (3)
  • Bi Si 3,586
  • Bi Bi 3,873
  • BGO
  • Bi O 2,221 (3)
  • Bi O 2,584 (3)
  • Bi Ge 3,661
  • Bi Bi 3,944
  • CONCLUSIONS
  • The octahedron of oxygens around the Bi is more
    distorted in BSO than in BGO
  • The tetrahedron of Si is more compact around Bi
    in BSO than in BGO

26
BGO
BSO
27
BGO Density of states
28
BSO Density of states
29
Band structure around the band gap
BGO
BSO
Band gap 3,54 eV Indirect! Experim. 4,13 eV
Band gap 4,04 eV Indirect! Experim. 4,34 eV
30
BGO Predominant Band Characters around the gap
total
Bi-p
O-p
31
BSO Predominant Band Characters around the gap
total
Bi-p
O-p
32
Optics How does the solid respond to external
electromagnetic field? This information is
contained in complex dielectric tensor ? of the
material!
Linear optics RPA approximation Inter-band
electronic transitions
filled initial state of energy Ei(k)
empty final state of energy Ef(k)
P? electronic momentum operator ? frequency of
the incoming radiation
Re ??? ? Kramers-Kronig relation
33
Connection between the electromagnetism and the
optics N2 ? (Maxwell)
Complex refraction index N(?)n(?)ik(?) n
normal refraction index (changes phase
velocity and propagation angle of radiation in
the material) k extinction (damping)
coefficient (describes a rate of atenuation
of radiation in the material) ? absorption
coefficient (the inverse of the
characteristic penetration depth of radiation, in
which the intensity decreases 1/e times) R
reflection index ( probability of the
radiation reflection)
Knowing ? ? all the optical constants can be
calculated !
34
Calculated optical absorption spectra of
BGO (Imaginary part of dielectric tensor e)
Conclusion Optical absorption in BGO is
dominated by O-p -gt Bi-p electronic transitions!
35
Calculated optical absorption spectra of
BSO (Imaginary part of dielectric tensor e)
Conclusion Optical absorption in BSO is also
dominated by O-p -gt Bi-p electronic transitions!
36
Refraction index
Exp n(480nm)2.15 Theory 2.22
Exp n(480nm)2.06 Theory 2.13
M. Kobayashi, Nucl. Instr. And Meth. A 372
(1996) 45
Comparison between Experimental and Theoretical
Refraction index of the BGO
1 P. A., Williams et al. Applied Optics, 35
(1996) 3562 2 R. Nitsche, J. Appl. Phys. 36
(1965) 2358 3 G. Montemezzani et al. 9 (1992)
1110
37
Reflectivity
Extinction coefficient
Absorption coefficient
38
Conclusions
  • Electronic structure
  • Band structures of BGO and BSO are very similar,
    except for some details in the conduction band
    bottom (different arrangement of empty bands)
  • The valence band top is dominated by the O-p
    states and the conduction band bottom by the Bi-p
    states? principal physical and optical properties
    are determined by these states
  • Band gaps in both compounds are indirect
  • The principle effect of substitution of Ge (BGO)
    for Si (BSO) is the change of interatomic
    distances between Bi and O octahedron around the
    Bi in BSO is more distorted than in BGO
  • Optical absorption
  • The strongest absorption of the BGO is in the
    region of 160-300 nm and of the BSO in the region
    of 160-230 nm
  • In these regions, the BSO attenuates the
    radiation more efficiently than the BGO ? the BSO
    scintillator can be made thinner!
  • Refraction indices for both BGO and BSO decrease
    when the radiation energy exceeds the gap energy
  • For a region of far-UV both BGO and BSO exhibit
    very strong reflection
  • Absorption process the O atoms around the Bi
    absorb the energy of radiation (through their
    p-electrons) and transfer the energy to the Bi
    ion (to its p-electrons).

39
  • What about the emission spectra?
  • Precise description of the excited states are
    required !

Acknowledgements
40
ISNCS2007
IV International Symposium on Non-Crystalline
Solids VIII Brazilian Symposium on Glass and
Related Materials Brazil- October 21-25,
2007 Aracaju- Sergipe International Scholl on
Glasses, October 26-28
41
16th INTERNATIONAL CONFERENCE ON DEFECTS IN
INSULATING MATERIALS 24-29 August 2008
42
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43
ARACAJU Capital of Sergipe State
Thank you for your attention!
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