Demonstration of Sub-Rayleigh Lithography Using a Multi-Photon Absorber - PowerPoint PPT Presentation

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Demonstration of Sub-Rayleigh Lithography Using a Multi-Photon Absorber

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Demonstration of Sub-Rayleigh Lithography Using a Multi-Photon Absorber Heedeuk Shin, Hye Jeong Chang*, Malcolm N. O'Sullivan-Hale, Sean Bentley# , and Robert W. Boyd – PowerPoint PPT presentation

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Title: Demonstration of Sub-Rayleigh Lithography Using a Multi-Photon Absorber


1
Demonstration of Sub-Rayleigh Lithography Using
aMulti-Photon Absorber
  • Heedeuk Shin, Hye Jeong Chang, Malcolm N.
    O'Sullivan-Hale, Sean Bentley , and Robert W.
    Boyd
  • The Institute of Optics, University of Rochester,
    Rochester, NY 14627, USA
  • The Korean Intellectual Property Office,
    DaeJeon 302-791, Korea
  • Department of Physics, Adelphi University,
    Garden City, NY

Presented at OSA annual meeting, October 11th,
2006
2
Outline
  • Motivation
  • Quantum lithography
  • Proof-of-principle experiments
  • Multi-photon lithographic recording material
  • Experimental results
  • Non-sinusoidal 2-D patterns
  • Conclusion future work

1/16
3
Motivation
  • In optical lithography, the feature size is
    limited by diffraction, called the Rayleigh
    criterion.
  • - Rayleigh criterion l/2
  • Quantum lithography using an N-photon
    lithographic recording material entangled light
    source was suggested to improve optical
    lithography.
  • We suggest PMMA as a good candidate for an
    N-photon lithographic material.

2/16
4
Quantum lithography
  • Classical interferometric lithography
  • - , where K
    l/(2sinq)
  • Resolution l/2 at grazing incident angle
  • Quantum interferometric lithography uses
    entangled N-photon light source.
  • -
  • Resolution l/2N
  • Advantage high visibility is possible even with
    large resolution enhancement.

Boto et al., Phys. Rev. Lett. 85, 2733, 2000
3/16
5
Enhanced resolution with a classical light source
Phase-shifted-grating method
  • Fringe patterns on an N-photon absorber with M
    laser pulses.
  • The phase of mth shot is given by 2pm/M.
  • The fringe pattern is
  • Example

One photon absorber Single shot
Two-photon absorber Two shots
S.J. Bentley and R.W. Boyd, Optics Express, 12,
5735 (2004)
4/16
6
PMMA as a multi-photon absorber
  • PMMA is a positive photo-resist, is transparent
    in visible region and has strong absorption in UV
    region.
  • 3PA in PMMA breaks chemical bonds, and the broken
    bonds can be removed by developing process. (N
    3 at 800 nm)

PMMA is excited by multi-photon absorption
800 nm
UV absorption spectrum of PMMA
5/16
7
Experiment material preparation
  • Sample preparation
  • 1) PMMA solution
  • PMMA (Aldrich, Mw 120,000)
    Toluene 20 wt
  • 2) PMMA film Spin-coat on a glass substrate
  • Spin coating condition 1000 rpm, 20
    sec, 3 times
  • Drying 3 min. on the hot plate
  • Development
  • 1) Developer 11 methyl isobutyl ketone
    (MIBK) to Isopropyl Alcohol
  • 2) Immersion 10 sec
  • 3) Rinse DI water, 30 sec
  • 4) Dry Air blow dry

6/16
8
Experimental setup
with regenerative amplifcation 120 fs, 1 W, 1
kHz, at 800 nm (Spectra-Physics)
WP half wave plate Pol. polarizer M1,M2,M3
mirrors BS beam splitter f1,f2 lenses PR
phase retarder (Babinet-Soleil compensator)
7/16
9
Experimental process
Path length difference l/2
Interference pattern shifted by l/4
Developing
l/2
Phase retarder
l/4
PMMA
Substrate (Glass)
8/16
10
Demonstration of writing fringes on PMMA
Recording wavelength 800 nm Pulse energy 130
mJ per beam Pulse duration 120 fs
Recording angle, ? 70 degree Period ?/(2sin?)
425 nm
425 nm
9/16
11
Sub-Rayleigh fringes l/4 (M 2)
Recording wavelength 800 nm Two pulses with
phase shift Pulse energy 90 mJ per beam
Pulse duration 120 fs Recording angle, ? 70
degree Fundamental period ?/(2sin?) 425
nm Period of written grating 213 nm
p
213 nm
10/16
12
Threefold enhanced resolution (M 3)
Recording wavelength 800 nm Three pulses
with 2p/3 4p/3 phase shift Pulse energy 80 mJ
per beam Pulse duration 120 fs Recording
angle, ? 8.9 degree Fundamental period
?/(2sin?) 2.6 mm Period of written grating
0.85 mm
0.8 mm
1.67 mm
213 nm
2.6 mm
11/16
13
Non-sinusoidal fringes
  • PMMA is a 3PA at 800 nm. (N3)
  • Illumination with two pulses. (M2)
  • If the phase shift of the second shot is
  • , where ,
  • the interference fringe is
  • Numerical calculation is similar to the
    experimental result.
  • This shows the possibility of non-sinusoidal
    fringe patterns.

12/16
14
Non-sinusoidal Patterns
  • Different field amplitudes on each shot can
    generate more general non-sinusoidal patterns.

For example, if N 3 , M 3 A1 1
A2 0.75 A3 0.4
?1 0 ?2 p/2 ?3 p
13/16
15
Two Dimensional Patterns
  • Method can be extended into two dimensions using
    four recording beams.

For example, N8, M14
14/16
16
Conclusion
  • The possibility of the use of PMMA as a
    multi-photon lithographic recording medium for
    the realization of quantum lithography.
  • Experimental demonstration of sub-Rayleigh
    resolution by means of the phase-shifted-grating
    method using a classical light source.
  • - writing fringes with a period of l/4
  • Quantum lithography (as initially proposed by
    Prof. Dowling) has a good chance of becoming a
    reality.
  • Future work
  • Higher enhanced resolution (M 3 or more)
  • Build an entangled light source with the high
    gain optical parametric amplification.
  • Realization of the quantum lithography method.

15/16
17
Acknowledgement

Dr. Samyon Papernov
Supported by - the US Army Research Office
through a MURI grant - the Post-doctoral
Fellowship Program of Korea Science and
Engineering Foundation (KOSEF) and Korea
Research Foundation (KRF)
16/16
18
Thank you for your attention! http//www.optics.
rochester.edu/boyd
19
Two Dimensional Patterns
  • Experimental 2-D pattern
  1. Illuminate one shot, N 3, M 1
  2. Rotate the sample
  3. Illuminate the second shot, N 3, M 1
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