AP 283 Complement6 - PowerPoint PPT Presentation

Title: AP 283 Complement6


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APh 183 Physics of Semiconductors and
Semiconductor Devices
Tuesday Thursday, 9-1030 am 104 Watson
Instructor H.A. Atwater Complement 1 Gallium
Nitride and III-Nitride Semiconductors
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III-Nitride Semiconductors
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Evolution of Luminous Efficiency by Technology
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GaN Bandstructure (Wurtzite Phase)
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GaN Mobility and Scattering
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GaN Hydrogen Passivation of Dopants
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GaN Properties
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GaN Field Effect Transistors
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GaN as a Power Device Material
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GaN Typical Blue LED Structure
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GaN/Sapphire Growth
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Dislocation Density Effects on Internal Quantum
Efficiency and Device Lifetime
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GaN Defect Reduction via Lateral Epitaxial Growth
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Light Extraction Critically Dependent on Layer
Thickness Control
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Photonic Crystals Improve Light Emission
Directivity
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LED Spectral Luminous Efficiency vs. Eye Response
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White Light Generation via Phosphor
Down-Conversion and RGB Color Mixing
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CdSe Quantum Dot Phosphors for White LEDs
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Examples of LED Packaging Schemes
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GaN LED Package
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Device Structure for UV LED
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Thin Metal Contact Important to UV LEDs
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LED Applications
Lighting Traffic Signals
Displays
University of Strathclyde Institute of Photonics
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HBLED Market