28 Tfast PPTs View free & download

FASTA - FASTF/TFASTF y FASTS/TFASTS: compara peque os fragmentos de p pticos / base de ... secuencias de prote na (FASTF/FASTS) o base de datos de secuencias de ADN ...

FASTF/TFASTF y FASTS/TFASTS: compara peque os fragmentos de p pticos / base de ... secuencias de prote na (FASTF/FASTS) o base de datos de secuencias de ADN ...

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NAR?? - Title: 1 Author: xy Last modified by: Lenovo User Created Date: 4/17/2006 9:03:07 AM Document presentation format: Company

Title: 1 Author: xy Last modified by: Lenovo User Created Date: 4/17/2006 9:03:07 AM Document presentation format: Company

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FASTA and BLAST PowerPoint PPT Presentation

FASTA and BLAST - FASTA (pronounced FAST-Aye) stands for FAST-All, reflecting the fact that it can ... This is achieved by performing optimized searches for local alignments using a ...

FASTA (pronounced FAST-Aye) stands for FAST-All, reflecting the fact that it can ... This is achieved by performing optimized searches for local alignments using a ...

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Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology PowerPoint PPT Presentation

Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology - Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology Christoph Brezina2, Klaus Desch2 , Harry van der Graaf 1, Vladimir ...

Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology Christoph Brezina2, Klaus Desch2 , Harry van der Graaf 1, Vladimir ...

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A High Fidelity Integrated System Model for Marine Power Systems Jeroen Schuddebeurs Advanced Marine PowerPoint PPT Presentation

A High Fidelity Integrated System Model for Marine Power Systems Jeroen Schuddebeurs Advanced Marine - A High Fidelity Integrated System Model for Marine Power Systems. Jeroen ... Could be up to 100 MW (e.g. QM2 Cunard Line) Relatively large electric machines ...

A High Fidelity Integrated System Model for Marine Power Systems. Jeroen ... Could be up to 100 MW (e.g. QM2 Cunard Line) Relatively large electric machines ...

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Tools and Softwares PowerPoint PPT Presentation

Tools and Softwares - MACAW uses scores for aligning amino acids called PAM-250. ... MACAW can use some different, more biologically realistic set of scores. ...

MACAW uses scores for aligning amino acids called PAM-250. ... MACAW can use some different, more biologically realistic set of scores. ...

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280 GHz fT InP DHBT with 1.2 mm2 base-emitter junction area in MBE Regrown-Emitter Technology PowerPoint PPT Presentation

280 GHz fT InP DHBT with 1.2 mm2 base-emitter junction area in MBE Regrown-Emitter Technology - Tel: (704)319-2033; ywei@rfmd.com. Motivation for Regrown-Emitter HBT: InP vs. Si/SiGe ... 4 inch Si wafer uniformity testing. refractive index measurement ...

Tel: (704)319-2033; ywei@rfmd.com. Motivation for Regrown-Emitter HBT: InP vs. Si/SiGe ... 4 inch Si wafer uniformity testing. refractive index measurement ...

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Molecular Beam Epitaxy of Low Resistance Polycrystalline P-Type GaSb PowerPoint PPT Presentation

Molecular Beam Epitaxy of Low Resistance Polycrystalline P-Type GaSb - Y. Dong, D. Scott, Y. Wei, A.C. Gossard and M. Rodwell. ... (Reason: Carbon must displace antimony to be effective p-type dopant) University of California ...

Y. Dong, D. Scott, Y. Wei, A.C. Gossard and M. Rodwell. ... (Reason: Carbon must displace antimony to be effective p-type dopant) University of California ...

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Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron Velocity PowerPoint PPT Presentation

Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron Velocity - Mesa DHBT with 0.6 mm emitter width, 0.5 mm base contact width. SI : InP. Substrate ... collector isolation by implant or regrowth (provide room for current spreading) ...

Mesa DHBT with 0.6 mm emitter width, 0.5 mm base contact width. SI : InP. Substrate ... collector isolation by implant or regrowth (provide room for current spreading) ...

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$In-situ Iridium Refractory Ohmic Contacts to p-InGaAs PowerPoint PPT Presentation$

In-situ Iridium Refractory Ohmic Contacts to p-InGaAs - In-situ Iridium Refractory Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault, Arthur Gossard, Mark J. W. Rodwell

In-situ Iridium Refractory Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault, Arthur Gossard, Mark J. W. Rodwell

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On the Path to Selfservice Navy Career Tools PowerPoint PPT Presentation

On the Path to Selfservice Navy Career Tools - Navy Training Management and Planning System (NTMPS) and NTMPS Afloat. Distance Support ... Information & Communications. MCC Maria Escamilla. Public Affairs Officer ...

Navy Training Management and Planning System (NTMPS) and NTMPS Afloat. Distance Support ... Information & Communications. MCC Maria Escamilla. Public Affairs Officer ...

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Characterization of Contact Resistivity on InAsGaSb Interface PowerPoint PPT Presentation

Characterization of Contact Resistivity on InAsGaSb Interface - If ohmic, is the interfacial contact resistivity low enough? ... Compare the InAs(n)/GaSb(p) interfacial contact resistivity with that of metal on p InGaAs. ...

If ohmic, is the interfacial contact resistivity low enough? ... Compare the InAs(n)/GaSb(p) interfacial contact resistivity with that of metal on p InGaAs. ...

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In-situ and Ex-situ Ohmic Contacts To Heavily Doped p-InGaAs PowerPoint PPT Presentation

In-situ and Ex-situ Ohmic Contacts To Heavily Doped p-InGaAs - In2O3/Ga2O3 + 4H 2H2O + In2O/Ga2O In2O3/Ga2O3 + 4H H2O + 2InOH/2GaOH Similarly carbon containing complexes (InGaAs-C) are broken into volatile products GHz 1400 ...

In2O3/Ga2O3 + 4H 2H2O + In2O/Ga2O In2O3/Ga2O3 + 4H H2O + 2InOH/2GaOH Similarly carbon containing complexes (InGaAs-C) are broken into volatile products GHz 1400 ...

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IEEE Bipolar/BiCMOS Circuits and Technology Meeting PowerPoint PPT Presentation

IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Ultra High Frequency Static Dividers 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology Zach Griffith, Mattias Dahlstr m, and Mark J.W. Rodwell

Ultra High Frequency Static Dividers 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology Zach Griffith, Mattias Dahlstr m, and Mark J.W. Rodwell

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High Doping Effects on in-situ Ohmic Contacts to n-InAs PowerPoint PPT Presentation

High Doping Effects on in-situ Ohmic Contacts to n-InAs - High Doping Effects on in-situ Ohmic Contacts to n-InAs Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur Gossard and Mark J. W. Rodwell

High Doping Effects on in-situ Ohmic Contacts to n-InAs Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur Gossard and Mark J. W. Rodwell

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The ISOLDE yield database Measured secondary beams intensities at ISOLDE PowerPoint PPT Presentation

The ISOLDE yield database Measured secondary beams intensities at ISOLDE - Pierre Delahaye for the ISOLDE collaboration ... Empiric release formula ... Empiric 4-parameter formula: J. Lettry et al., Nucl. Instr. Meth. B126 (1997) 130. ...

Pierre Delahaye for the ISOLDE collaboration ... Empiric release formula ... Empiric 4-parameter formula: J. Lettry et al., Nucl. Instr. Meth. B126 (1997) 130. ...

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IEEE BipolarBiCMOS Circuits and Technology Meeting - Department of Electrical and Computer Engineering ... Present efforts in InP HBT research community ... Collector capacitance charging time when switching...

Department of Electrical and Computer Engineering ... Present efforts in InP HBT research community ... Collector capacitance charging time when switching...

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Frequency Limits of Bipolar Integrated Circuits PowerPoint PPT Presentation

Frequency Limits of Bipolar Integrated Circuits - Electrical characterization, metallurgical investigation, and thermal stability ... Gain.under large-signal conditions ...gain is less than MAG/MSG... Breakdown ...

Electrical characterization, metallurgical investigation, and thermal stability ... Gain.under large-signal conditions ...gain is less than MAG/MSG... Breakdown ...

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Transistor and Circuit Design for 100-200 GHz ICs PowerPoint PPT Presentation

Transistor and Circuit Design for 100-200 GHz ICs - Transistor and Circuit Design for 100-200 GHz ICs Mark Rodwell University of California, Santa Barbara V. Paidi, Z. Griffith, D. Scott, Y. Dong, M. Dahlstr m, Y. Wei ...

Transistor and Circuit Design for 100-200 GHz ICs Mark Rodwell University of California, Santa Barbara V. Paidi, Z. Griffith, D. Scott, Y. Dong, M. Dahlstr m, Y. Wei ...

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Selectively implanted subcollector DHBTs PowerPoint PPT Presentation

Selectively implanted subcollector DHBTs - Reduce lateral dimensions to decrease RC time constants ... 160 Gb/s fiber ICs, 300 GHz MMICs for communications, radar, & imaging ...

Reduce lateral dimensions to decrease RC time constants ... 160 Gb/s fiber ICs, 300 GHz MMICs for communications, radar, & imaging ...

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Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits PowerPoint PPT Presentation

Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits - Title: asdfasdfasdf Author: mark rodwell Last modified by: mark rodwell Created Date: 10/26/2004 5:47:06 PM Document presentation format: On-screen Show

Title: asdfasdfasdf Author: mark rodwell Last modified by: mark rodwell Created Date: 10/26/2004 5:47:06 PM Document presentation format: On-screen Show

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High Doping Effects on Insitu and Exsitu Ohmic Contacts to nInGaAs PowerPoint PPT Presentation

High Doping Effects on Insitu and Exsitu Ohmic Contacts to nInGaAs - Intel Corporation, Technology Manufacturing Group, Santa Clara, CA. Outline. Motivation ... Ex-situ contacts: treatment with UV-O3, HCl etch ...

Intel Corporation, Technology Manufacturing Group, Santa Clara, CA. Outline. Motivation ... Ex-situ contacts: treatment with UV-O3, HCl etch ...

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Frequency Limits of InP-based Integrated Circuits PowerPoint PPT Presentation

Frequency Limits of InP-based Integrated Circuits - P. Asbeck, A. Kummel, Y. Taur, University of California San Diego. J. Harris, P. McIntyre, ... Plenary, Indium Phosphide and Related Materials Conference, May ...

P. Asbeck, A. Kummel, Y. Taur, University of California San Diego. J. Harris, P. McIntyre, ... Plenary, Indium Phosphide and Related Materials Conference, May ...

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InP HBT Digital ICs and MMICs in the 140-220 GHz band - InP HBT Digital ICs and MMICs in the 140220 GHz band

InP HBT Digital ICs and MMICs in the 140220 GHz band

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Development of a Liquid Xenon Calorimeter for mgeg experiment at PSI PowerPoint PPT Presentation

Development of a Liquid Xenon Calorimeter for mgeg experiment at PSI - Solenoidal magnetic spectrometer with a graded magnetic field ... Use inverse-compton scattered g beam provided at TERAS in ETL in Tsukuba, Japan. Eg : ~40MeV ...

Solenoidal magnetic spectrometer with a graded magnetic field ... Use inverse-compton scattered g beam provided at TERAS in ETL in Tsukuba, Japan. Eg : ~40MeV ...

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On the Feasibility of FewTHz Bipolar Transistors PowerPoint PPT Presentation

On the Feasibility of FewTHz Bipolar Transistors - unclear if Si MOSFETs will work well at sub-22-nm gate length ... New Emitter Process for 128 and 64 nm junctions. dry etched metal. dry etched junction ...

unclear if Si MOSFETs will work well at sub-22-nm gate length ... New Emitter Process for 128 and 64 nm junctions. dry etched metal. dry etched junction ...

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R - NuFACT'01 29/05/2001 Tsukuba, Japan. Introduction, ge? at PSI ... PMTs operated for 2.5 days stably. Calibration with LED and a source signals done ...

NuFACT'01 29/05/2001 Tsukuba, Japan. Introduction, ge? at PSI ... PMTs operated for 2.5 days stably. Calibration with LED and a source signals done ...

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TFAST - Department of Electrical and Computer Engineering ... This work was supported under by the Office of Naval Research, program N00014-01-1-0065 ...

Department of Electrical and Computer Engineering ... This work was supported under by the Office of Naval Research, program N00014-01-1-0065 ...

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