The INFNPAT MEMS Project

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The INFN-PAT MEMS Project

•  R. Battiston
• University and INFN of Perugia
• 2nd Trento Workshop on Advanced Silicon Detectors
  (3D and p-type)
• IRST february 13-14th 2006

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Why a MEMS program the INFN view

• tradition of INFN scientists in the development
  of state of the art radiation detectors to be
  used in particle physics, medical physics,
  environmental and artistics monitoring ..
• MEMS technologies have a development potential
  comparable to the microelectronics in the early
  eighties. It is possible to reach a technological
  and scientific leadership, in a vital sector of
  the XXIst century
• Strenghthen the collaborationwith ITC-irst, who
  has demonstrated the capability to built high
  quality detectors and microsystems (bolometers,
  AMS and ALICE microstrips, medical radiation
  detectors..)

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Why a MEMS program the PAT/ITC-irst view

• strenghthen the ITC-irst design and construction
  infrastructures in the framework of the available
  resources
• strenghthen a strategic collaboration with a
  National Research Institute
• the link among
• basic research ? continued innovation
• and
• applicaton of social interest ? dual projects

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The MEMS Program

• The MEMS program foresee four pilot projects
  having a joint INFN/ITC-irst interest
• 3D radiation silicon detectors
• SiPM matrices for fast photon counting
• Microbolometers array
• Thick Silicon detectors Low Temperature Silicon
  Time Projection Chamber (TPC) and Normal
  Temperature Silicon Detectors for high precision
  PET.

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Framework Program PAT-INFN

• MEMS Program
• P1. 3D Silicon Detectors

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ITC-irst 3D Single Tipe Columns - basic concept
C. Piemonte et al, Nucl. Instr. Meth. A 541
(2005)
Detector layout
ionizing particle
n-columns
Inter electrods section
Holes drfit in the central Region and diffuse to
the p contact
Electrons are collected thanks to the tresverse
field
p-type substrate
grid-like bulk contact
Advantage with respect to the classic 3D standard
Only one type of columns only one etching
step only one doping step
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Testing the column process

• Deposizione polisilicio e ossido
• Ossidazione
• Deposizione metalli
• Litografia

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Strip detectors - layout
Guard ring interno (bias line)
metal
p-stop
foro
Apertura contatto
n
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.from the literature
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.from the literature
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.from the literature
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Dual interest of the 3D Silicon Detectors

• Very high rate imaging
• Radiation resistance

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Framework Program PAT-INFN
MEMS Program P2. SiPM photon counters
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Silicon photomultiplier (SiPM)
50 0hm

• SiPM main features
• Sensitive size 1x1mm2 on chip 1.5x1.5 mm2
• Gain 2?106
• Ubias50V
• Recovery time lt 100 ns/pixel
• Number of pixels 1000/mm2
• Nuclear counter effect negligible (due to
  Geiger mode
• Insensitive to magnetic field
• Dynamic range 103/mm2

for details NIMA 504(2003)48
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SiPMT characterstics compared
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Single photoelectron (single pixel) spectra

• SiPM
• excellent single photoelectron resolution
• low ENF expected

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Photo of an ITC-wafer
Photo of a ITC-irst SiPM
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ITC-irst SiPM signals under pulsed light
Preliminary results
BLUE pulsed light (470 nm)
SiPM signal
Trigger

• SiPM sensible to the blue light

RED pulsed light

• Pisa measurements
• Very good resolution of single
• photoelectrons

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SiPM arguments in favour

• Low noise,high gain
  
• Good single electron resolution
  
• Very good timing
• Small recovery time
• Low charge particle/photon sensitivity
• Insensitivity to B
• Low bias voltage
• Low power consumption
• Compactness
• Room temperature operation
• Good temperature and voltage stability
• Simplest electronics
• Relatively low cost(low resistivity Si,simple
  technology)

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SiPM drawbacksand limitation
to be considered separately for
concrete application
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Timing by SiPM

• SiPM is quite fast discharge time is
• typically about 500 ps

• Rise time is 1 ns
  Single pixel recovery timelt100ns
• (RpixelxCpixel 30 ns)

• Timing by SiPM has been studied using very fast
  laser(FWHM40 ps)

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Timing by SiPM
The best
PMT R-5320

FWHM Laser (40 ps) electronics (40 ps) gt SiPM
(100 ps)

50 ps sigma for single ph.e. by leading edge
discriminator
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• SiPM timing performance competes with MCP PM

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SiPM Possible Applications in Particle Physics
The main field
Low Light Level (LLL) detection

• LLL scintillation Readout

• Single Photon Counting

• Fast(lt100 ps) timing for single photon

• Superfast(10ps) LLL timing

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Sci tileWLS fiber readout Application for
Hadron Tile Calorimeter
TESLA HCAL-sci tiles 50x50x5mm interlayered by 2
cm Fe
Plastic sci Vladimir WLS fiber Kuraray
Y-11 1mm Reflector 3M SiPM 1x1mm,1024 pixels
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I
Electron 4 GeV
V
Test beam DESY
MiniHCAL TESLA
9 layers of 3x3 sci tiles
WLSSiPMs
with 2cm Fe in between
Readout by SiPMs
------------------------
Without any amplifiers
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MIP in Sci tile 50x50x5 mm
------------------------------
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SiPM
Limitations for Tile calorimetry based on
SciWLS fiberSiPM readout
1. Limited dynamic range
Number of photoelectrons/tile lt number of SiPM
pixels(1024)

• GEANT3 based simulations show
• no impact on HCAL energy resolution up to
• hadron jet energy of 25 GeV

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Silicon Photomultiplier Tiles on the Lazio SiRad
counters on the ISS (first time in space, april
2005!)
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Individual SiPM counting rate
LAZIO-SiRad flight data
R.B., R. Bencardino
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SiPM for a single photon countingPossible
application for EUSO experiment

EUSO-
E
S
O

U
xtreme niverse pace bservatory
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EUSO needs

• 300000 Photodetectors,working in a single
• photon counting mode(TPC Calorimeter)

• Sensitivity in 300-400 nm range,PD eff
  30-40

• Fast(lt10 ns), compact,low weight,
• low power consuming

• Size 4x4(5x5) mm

Baseline option is MAPMTs

• SiPMs ?

(weght?power consumption?packing eff?QE?)
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SiPM for fast single photon timingPossible
applications for a new generationof Cherenkov
Imaging Detectors for High Luminosity B-factories
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10
D
R
I
C
etector of nternal eflected herenkov light
DIRC
T
O
P
ime f ropagation detector
TOP
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DIRC for BaBar upgrade
Cherenkov angle is extracted from (x,y) space
image
Single photon timing info

• To reject the BG hits

• To reduce the chromatic
• aberrations

Requirements
Timing100 ps
Candidates
MA Hamamatsu PMT H8500(138 ps)
SiPM?
Burle 8501 MPC PMT(54 ps)
-gt low gain,non uniform response
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SiPM Example for superfast timing
TOF Positron Emission Tomography(TOF PET)
with 3D reconstruction of each event
GEANT based simulation gives
FOR
3
ZnO(In) crystal size (4.5 mm)
SiPM size 4.5x4.5 mm
Sigma of SiPM 50 ps
Sigma electronics 5 ps
Photon Detection eff. 30
3D TOF PET resolution of 2 mm(sigma) can be
achieved
(TOF timing of 13 ps for 400ph.e)
1,2
SiPM Limitations Size 4.5x4.5mm, PD
efficiency 30
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Dual interest of the 3D Silicon Detectors

• 3d imaging, fast timing gives the third
  coordinate
• Automotive applications (active illumination)
• 10 ps 3 mm / 2 1.5 mm
• Medical applications (without active
  illumination) 10 ps 3 mm

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Framework Program PAT-INFN
MEMS Program P3. Array of Microbolometers
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• Cryogenic Bolometers
• Direct neutrino mass
• Micromachining and bolometer construction
• Uncooled Bolometers
• Applications
• Technologies and goals

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Cryogenics Bolometers

• Application
• Cryogenic microcalorimeters are usedto measure
  effects due to neutrino mass
• This approach is complementary to the
  spettrometric technique

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Cryogenic Bolometers

Integrated microbolometrs
Micromachining allows to integrat the thermal
link.
Integrated microcalorimeter built using a
multiple implantation on silicon and
micromachining.

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MARE phase I MIBETA2 options
ITC-IRST TMAH micromachined arrays with SU8
supports for the absorbers. Implanted silicon
with the technology developed for the MIBETA
single devices. STATUS 10 devices arrays
fabrication ongoing. IRST process BL12
NTD Ge array (LBL Bonn). STATUS preferred for
the larger e-ph thermal coupling.
Reproducibility to be demonstrated.
NASA 6?6 silicon array (XRS2). STATUS
encouraging first results with 450?g AgReO4.
Coupling and electronics to be optimized.
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Cryogenic Bolometers

• Goals
• Develop and array of 200 microcalorimeters
• Optimization for the thermistor implantation
• VLSI routing of the electrical connetions
  (microbridges) having an extremely low thermal
  conductivity

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INFN-PAT Attività Microwave Kinetic Inductance
Detectors (MKID) INFN Experiment RIC (gruppo V)
People coinvolte allIRST Pierluigi Bellutti -
IRST Benno Margesin - IRST Alessandro Monfardini
INFN-PAT Persone di riferimento INFN Roberto
Battiston INFN-PAT Paolo Debernardis
Responsabile nazionale RIC Sezioni
coinvolte Roma, Perugia Trento ?
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MKID in short
Le quasi-particelle generate dalla radiazione
incidente determinano una variazione di
impedenza di una strip di SC. Se la strip è
parte di un circuito risonante (1-10GHz) questo
si traduce in variazione di fase in trasmissione.

• Detector utile
• Risuonatore
• Feeding radiazione incidente
• qp trapping (quasi-optical)
• stripline (antenna coupling)

Resonator Day et al., NATURE (2003)
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Prototype Resonators design

• CARATTERISTICHE dispositivi di CARDIFF
• - Diversi disegni del risonatore ?/2 e ?/4
• Dispositivi più interessanti per la
  realizzazione
• di veri rivelatori ?/4 (come JPL, SRON)
• Niobio per iniziare (Tc9K richiede solo un
• criostato 3He pompato)
• IMPROVEMENTS del nuovo disegno
• Accoppiamento capacitivo senza break del
• piano di massa
• Eventuale realizzazione dei dispositivi su
• membrana ONO (SiO2/Si3N4/SiO2) di spessore
• sub-micron. Riduzione delle perdite e del
• rumore dielettrico.

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Uncooled InfraRed Sensors

• Applications
• Fire fighting
• Night vision
• Access control
• Surveillance and Security
• Process control
• Quality control
• Medical imaging

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Uncooled InfraRed Sensors
InfraRed Imaging System

• Option A a single device in CMOS compatible
  technology
• Integration of bolometer and readout circuits at
  pixel level

Option B bolometer array in dedicated technology
readout circuits in standard CMOS technology

• 2D array of bolometers in IRST technology
• 2D array of readout circuits in standard CMOS
  technology
• Bump bonding and flip chip assembly technologies

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Dual interest of the microbolometers array

• - thermal imaging at room temperature

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Framework Program PAT-INFN
MEMS Program P4. Silicon TPC (cold) Thick
Silicon (uncooled)
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Photo wafer Run CRIO1
Au/Si
Pt/Si
Al/Si
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Cryogenics laboratory at LNL T77K e 4K

• Max 3 dispositivi in camera alla volta
• 2 giorni per raggiungere i 4K
• Misure manuali con tempi di attesa di
• stabilizzazione di 30 minuti
• Idiode e Igr acquisite non contemporaneamente

Supporto per wafer
Supporto per campione
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1 cm thick wafer before the thermal oxidation
step
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• The measured quantities in Compton imaging are
• x, y, z-co-ordinates in the first detector
• x, y, z-co-ordinates in the second detector
• Energy of recoil electron in first detector
• Energy of scattered photon in second detector
• Not measurable with Compton Cameras for medical
  applications Direction of recoil electron, which
  leads to the conical ambiguity. This leads to
  more complicated image reconstruction algorithms.

Illustration of conical ambiguity in the
reconstruction of a point source
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Requirements on the first detector
Ratio of Compton Cross Section to
Photo-absorption Cross Section

• Excellent energy and good position resolution.
• Mature processing and wide-spread use
• Simple operating conditions (hospitals!!!)
• Robustness.
• High Compton to photo-interaction ratio
• Affordable price.
• Silicon is the only and the best choice for the
  first detector

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Dual interest of Thick Silicon

• Medical applications high resolution PET
• Astrophysical applications compton camera

Small animal PET P. Weilhammer et al. 2003 G.
Zavattini et aL. 2005
?-ray spectrometer B.F. Phlips et al. IEEE
TNS,51,2438,2004
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Conclusion

• The MEMS like technologies will have a strong
  inpact in area ranging from fundamental research
  to applications
• ITC-irst INFN MEMS program timely offer a frame
  of collaboration among the research and the
  technology communities
• Good results have already been achieved in the
  first 18 months, more to come